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CM600HC-24NFM の電気的特性と機能

CM600HC-24NFMのメーカーはPowerexです、この部品の機能は「IGBT ( Insulated Gate Bipolar Transistor )」です。


製品の詳細 ( Datasheet PDF )

部品番号 CM600HC-24NFM
部品説明 IGBT ( Insulated Gate Bipolar Transistor )
メーカ Powerex
ロゴ Powerex ロゴ 




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CM600HC-24NFM Datasheet, CM600HC-24NFM PDF,ピン配置, 機能
Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 (724) 925-7272
CM600HC-24NFM
Single IGBT
NFM-Series Module
600 Amperes/1200 Volts
GH
J
U (2 TYP.)
V (4 TYP.)
F EG
E
C
W
W
E
D
A
N PQ
K L MB
C RS T
C
G
E
E
Outline Drawing and Circuit Diagram
Dim.
Inches
Millimeters
A
4.25
108.0
B
2.44
62.0
C
1.016
25.8
D
3.66±0.01 93.0±0.25
E
3.15
80.0
F
0.79
20.0
G
0.94
24.0
H
0.79
20.0
J
1.14
29.0
K
0.80
20.4
L
1.38
35.0
Dim.
M
N
P
Q
R
S
T
U
V
W
Inches
Millimeters
1.89
48.0
0.94
24.0
0.23
6.0
0.85
21.5
0.14
3.5
0.96
24.4
1.45+0.04/-0.02 36.8+1.0/-0.5
M6 M6
0.26 Dia.
6.5 Dia.
0.62
15.8
Description:
Powerex NFM IGBT Modules
are designed for use in hard
switching (15-30 kHz) applications.
Each module consists of one IGBT
Transistor in a single configuration
with a reverse-connected super-
fast recovery free-wheel diode. All
components and interconnects
are isolated from the heat sinking
baseplate, offering simplified sys-
tem assembly and thermal man-
agement.
Features:
£ Low Drive Power
£ Low ESW(off)
£ Discrete Super-Fast Recovery
Free-Wheel Diode
£ Isolated Baseplate for Easy
Heat Sinking
Applications:
£ Power Supplies
£ UPS
£ Battery Powered Supplies
£ Induction Heating
Ordering Information:
Example: Select the complete
part module number you
desire from the table below -i.e.
CM600HC-24NFM is a 1200V
(VCES), 600 Ampere Single
IGBT Power Module.
Type
Current Rating
Amperes
VCES
Volts (x 50)
CM 600
24
02/07


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CM600HC-24NFM pdf, ピン配列
Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 (724) 925-7272
CM600HC-24NFM
Single IGBT NFM-Series Module
600 Amperes/1200 Volts
Thermal and Mechanical Characteristics, Tj = 25 °C unless otherwise specified
Characteristics
Symbol
Test Conditions
Thermal Resistance, Junction to Case
Rth(j-c)Q
Thermal Resistance, Junction to Case
Rth(j-c)D
Contact Thermal Resistance,
Case to Fin
Rth(c-f)
Per IGBT 1/2 Module,
TC Measured Point Just Under Chips
Per FWDi 1/2 Module,
TC Measured Point Just Under Chips
Per 1/2 Module, Thermal Grease Applied
External Gate Resistance
RG
Min.
0.52
Typ.
Max.
0.034
Units
°C/W
— 0.07 °C/W
0.02 — °C/W
— 5.2 Ω
1200
1000
800
OUTPUT CHARACTERISTICS
(TYPICAL)
VGE = 20V
15
13
12
Tj = 25°C
600 10
400
9
200
8
0
02468
COLLECTOR CURRENT, IC, (AMPERES)
FREE-WHEEL DIODE
FORWARD CHARACTERISTICS
(TYPICAL)
104
VGE = 0V
Tj = 25°C
103 Tj = 125°C
10
102
101
100
0123
EMITTER-COLLECTOR VOLTAGE, VEC, (VOLTS)
COLLECTOR-EMITTER
SATURATION VOLTAGE CHARACTERISTICS
(TYPICAL)
5
VGE = 15V
Tj = 25°C
4 Tj = 125°C
3
2
1
0
0 200 400 600 800 1000 1200
COLLECTOR-CURRENT, IC, (AMPERES)
CAPACITANCE VS.
(TYPICAL)
VCE
103
102 Cies
101 Coes
100 Cres
VGE = 0V
10-1
10-1 100 101 102
COLLECTOR-EMITTER VOLTAGE, VCE, (VOLTS)
COLLECTOR-EMITTER
SATURATION VOLTAGE CHARACTERISTICS
(TYPICAL)
10
Tj = 25°C
8 IC = 1200A
6 IC = 600A
IC = 240A
4
2
0
6
103
102
8 10 12 14 16 18
GATE-EMITTER VOLTAGE, VGE, (VOLTS)
HALF-BRIDGE
SWITCHING CHARACTERISTICS
(TYPICAL)
20
td(off)
tf
td(on)
tr
101
100
101
VCC = 600V
VGE = ±15V
RG = 0.52
Tj = 125°C
Inductive Load
102
COLLECTOR CURRENT, IC, (AMPERES)
103
02/07



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部品番号部品説明メーカ
CM600HC-24NFM

IGBT ( Insulated Gate Bipolar Transistor )

Powerex
Powerex


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