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IRS25091SPbF の電気的特性と機能

IRS25091SPbFのメーカーはInternational Rectifierです、この部品の機能は「HALF-BRIDGE DRIVER」です。


製品の詳細 ( Datasheet PDF )

部品番号 IRS25091SPbF
部品説明 HALF-BRIDGE DRIVER
メーカ International Rectifier
ロゴ International Rectifier ロゴ 




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IRS25091SPbF Datasheet, IRS25091SPbF PDF,ピン配置, 機能
Features
600V half-bridge driver
Tolerant to negative transient voltages
Gate drive supply range from 10 V to 20 V
Under-voltage lock-out for both channels
3.3 V, 5 V and 15 V input logic compatible
Cross-conduction prevention logic
Matched propagation delay for both channels
High side output in phase with IN input
Internal 530 ns dead-time, and programmable
up to 5usec with external resistor.
Lower di/dt gate driver for better noise immunity
DT/SD input turns off both channels
RoHS compliant
November 15, 2010
IRS25091SPbF
HALF-BRIDGE DRIVER
Packages
8-Lead SOIC
Product Summary
VOFFSET
IO+/-
VOUT
ton/off (typ.)
Dead Time
600 V max.
120 mA / 250 mA
10 V – 20 V
750 ns & 200 ns
530 ns
Description
The IRS25091 is a high-voltage, high-speed power MOSFET
and IGBT half-bridge driver with independent high and low
side referenced output channels. Proprietary HVIC and latch
immune CMOS technologies enable a ruggedized monolithic
construction. The logic input is compatible with standard
CMOS or LSTTL output, down to 3.3 V. The output drivers
feature a high pulse current buffer stage designed for minimum
driver cross-conduction. The floating channel can be used to
drive an N-channel power MOSFET or IGBT in the high side
configuration which operates up to 600V.
Typical Connection
Applications:
*HID Electronic Ballasts

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IRS25091SPbF pdf, ピン配列
IRS25091SPbF
Absolute Maximum Ratings
Absolute Maximum Ratings indicate sustained limits beyond which damage to the device may occur. All voltage
parameters are absolute voltages referenced to COM. The thermal resistance and power dissipation ratings are
measured under board mounted and still air conditions.
Symbol
VB
VS
VHO
VCC
VLO
VIN
VDT/SD
COM
dVS/dt
PD
RthJA
TJ
TS
TL
Definition
High side floating absolute voltage
High side floating supply offset voltage
High side floating output voltage
Low side and logic fixed supply voltage
Low side output voltage
Logic input voltage
Programmable deadtime and shutdown input voltage
Logic ground
Allowable offset supply voltage transient
Package power dissipation @ TA +25 °C
Thermal resistance, junction to ambient
Junction temperature
Storage temperature
Lead temperature (soldering, 10 seconds)
Min.
-0.3
VB - 20
VS - 0.3
-0.3
-0.3
COM -0.3
COM -0.3
VCC - 20
-50
Max.
620
VB + 0.3
VB + 0.3
20
VCC + 0.3
VCC + 0.3
VCC + 0.3
VCC + 0.3
50
0.625
200
150
150
300
Units
V
V/ns
W
°C/W
°C
Recommended Operating Conditions
For proper operation the device should be used within the recommended conditions. The VS and COM offset rating
are tested with all supplies biased at 15 V differential.
Symbol
Definition
Min.
Max. Units
VB High side floating supply absolute voltage
VS +10
VS +20
VS Static High side floating supply offset voltage
COM- 8(Note 1)
600
VSt Transient High side floating supply offset voltage
-50 (Note2)
600
VHO High side floating output voltage
VCC Low side and logic fixed supply voltage
VS VB V
10 20
VLO Low side output voltage
VIN Logic input voltage (IN & DT/SD)
0
VSS
VCC
VCC
VDT/SD
Programmable dead-time and shutdown input voltage
VSS
VCC
TA Ambient temperature
-40 125 °C
Note 1: Logic operational for VS of -8 V to +600 V. Logic state held for VS of -8 V to – VBS.
Note 2: Operational for transient negative VS of COM - 50 V with a 50 ns pulse width. Guaranteed by design. Refer
to the Application Information section of this datasheet for more details.
www.irf.com
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3Pages


IRS25091SPbF 電子部品, 半導体
IRS25091SPbF
Application Information and Additional Details
Informations regarding the following topics are included as subsections within this section of the datasheet.
IGBT/MOSFET Gate Drive
Switching and Timing Relationships
Deadtime
Matched Propagation Delays
Shut down Input
Input Logic Compatibility
Undervoltage Lockout Protection
Shoot-Through Protection
Negative VS Transient SOA
PCB Layout Tips
Additional Documentation
IGBT/MOSFET Gate Drive
The IRS25091 HVIC is designed to drive MOSFET or IGBT power devices. Figures 1 and 2 illustrate several parameters associated
with the gate drive functionality of the HVIC. The output current of the HVIC, used to drive the gate of the power switch, is defined as
IO. The voltage that drives the gate of the external power switch is defined as VHO for the high-side power switch and VLO for the low-
side power switch; this parameter is sometimes generically called VOUT and in this case does not differentiate between the high-side
or low-side output voltage.
Figure 1: HVIC sourcing current
Figure 2: HVIC sinking current
www.irf.com
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部品番号部品説明メーカ
IRS25091SPbF

HALF-BRIDGE DRIVER

International Rectifier
International Rectifier


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