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PDF 40PT Data sheet ( Hoja de datos )
| Número de pieza | 40PT | |
| Descripción | Stansard SCRs | |
| Fabricantes | nELL | |
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Hay una vista previa y un enlace de descarga de 40PT (archivo pdf) en la parte inferior de esta página. Total 5 Páginas | ||
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SEMICONDUCTOR
40PT Series RRooHHSS
Stansard SCRs, 40A
Main Features
Symbol
IT(RMS)
VDRM/VRRM
IGT
Value
40
600 to 1600
4 to 60
Unit
A
V
mA
DESCRIPTION
The 40PT series of silicon controlled rectifiers are
high performance glass passivated technology,
and are suitable for general purpose applications,
where in-rush current conditions are critical such
as overvoltage crowbar protection circuits in power
supplies, in-rush current limiting circuits, solid
state relay in back to back configuration, welding
equipment and high power motor control.
Base on a clip assembly technology, they offer a
superior performance in surge current capabilities.
A
K AG
KA G
TO-220AB (non-Insulated) TO-220AB (lnsulated)
(40PTxxA)
(40PTxxAI)
A
KA G
TO-3P (non-Insulated)
(40PTxxB)
A
K AG
TO-3P (Insulated)
(40PTxxBI)
KA
G
TO-263 (D2PAK)
(40PTxxH)
K AG
2(A)
TO-247AB (non-Insulated)
3(G)
(40PTxxC)
1(K)
ABSOLUTE MAXIMUM RATINGS
PARAMETER
SYMBOL
TEST CONDITIONS
RMS on-state current full sine wave
(180° conduction angle )
IT(RMS)
TO-3P/TO-247AB
TO-220AB/TO-263
TO-220AB insulated/TO-3P insulated
Average on-state current
(180° conduction angle)
IT(AV)
TO-3P/TO-247AB
TO-220AB/TO-263
TO-220AB insulated/TO-3P insulated
Non repetitive surge peak on-state
current (full cycle, Tj initial = 25°C)
I2t Value for fusing
ITSM
I2t
F =50 Hz
F =60 Hz
tp = 10 ms
Critical rate of rise of on-state current
IG = 2xlGT, tr≤100ns
Peak gate current
Maximum gate power
Average gate power dissipation
Repetitive peak off-state voltage
Repetitive peak reverse voltage
dI/dt F = 60 Hz
IGM
PGM
PG(AV)
VDRM
VRRM
Tp = 20 µs
Tp =20µs
Tj =125ºC
Tj =125ºC
Storage temperature range
Tstg
Operating junction temperature range
Tj
Maximum peak reverse gate voltage VRGM
Tc=95°C
Tc=90°C
Tc=80°C
Tc=95°C
Tc=90°C
Tc=80°C
t = 20 ms
t = 16.7 ms
Tj = 125ºC
Tj = 125ºC
Tj = 125ºC
www.nellsemi.com
Page 1 of 5
VALUE
40
25
460
480
1058
50
4
10
1
600 to 1600
- 40 to + 150
- 40 to + 125
5
UNIT
A
A
A
A2s
A/µs
A
W
W
V
ºC
V
1 page  
SEMICONDUCTOR
Case Style
40PT Series RRooHHSS
TO-3P
R 4.60 (0.181)
15.50 (0.610)
15.10 (0.594)
Φ4.17 (0.164)
4.08 (0.160)
4.60 (0.181)
4.40 (0.173)
1.55 (0.061)
1.45 (0.057)
3.65 (0.144)
3.40 (0.134)
21.10 (0.831)
20.40 (0.803)
16.50 (0.650)
15.80 (0.622)
KAG
1.40 (0.055)
1.20 (0.047)
15.60 (0.614)
14.35 (0.565)
5.65 (0.222)
5.40 (0.213)
5.65 (0.222)
5.40 (0.213)
0.70 (0.028)
0.50 (0.020)
2.90 (0.114)
2.70 (0.106)
TO-263(D2PAK)
10.45 (0.411)
9.65 (0.380)
6.22 (0.245)
A
4.83 (0.190)
4.06 (0.160)
9.14 (0.360)
8.13 (0.320)
K AG
15.85 (0.624)
15.00 (0.591)
0.940 (0.037)
0.686 (0.027)
2.67 (0.105)
2.41 (0.095)
5.20 (0.205)
4.95 (0.195)
1.40 (0.055)
1.14 (0.045)
1.40 (0.055)
1.19 (0.047)
0 to 0.254 (0 to 0.01)
2.79 (0.110)
2.29 (0.090)
0.53 (0.021)
0.36 (0.014)
3.56 (0.140)
2.79 (0.110)
TO-247AB
4.69 (0.185)
5.31 (0.209)
1.49 (0.059)
2.49 (0.098)
16.15 (0.242)
15.49 (0.610)
16.26 (0.640)
5.38 (0.212)
6.20 (0.244)
0.40 (0.016)
0.79 (0.031)
2.21 (0.087)
2.59 (0.102)
20.80 (0.819)
21.46 (0.845)
4.50 (0.177)Max
K
15.40 (0.606)
14.30 (0.560)
1.01 (0.040)
1.40 (0.055)
(TYP.)
5.45 (0.215)
3.55 (0.138)
3.81 (0.150)
AG
2.87 (0.113)
3.12 (0.123)
1.65 (0.065)
(TYP.)
2.13 (0.084)
5.45 (0.215)
2(A)
3(G)
1(K)
RoHS
www.nellsemi.com
Page 5 of 5
5 Page | ||
| Páginas | Total 5 Páginas | |
| PDF Descargar | [ Datasheet 40PT.PDF ] | |
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