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Datasheet 2SK2140 PDF ( 特性, スペック, ピン接続図 )

部品番号 2SK2140
部品説明 N-CHANNEL POWER MOS FET
メーカ NEC
ロゴ NEC ロゴ 
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2SK2140 Datasheet, 2SK2140 PDF,ピン配置, 機能
DATA SHEET
MOS FIELD EFFECT TRANSISTOR
2SK2140, 2SK2140-Z
SWITCHING
N-CHANNEL POWER MOS FET
INDUSTRIAL USE
DESCRIPTION
The 2SK2140, 2SK2140-Z is N-channel Power MOS Field Effect
Transistor designed for high voltage switching applications.
FEATURES
Low On-state Resistance
RDS(on) = 1.5 MAX. (VGS = 10 V, ID = 3.5 A)
Low Ciss Ciss = 930 pF TYP.
High Avalanche Capability Ratings
ABSOLUTE MAXIMUM RATINGS (TA = 25 ˚C)
Drain to Source Voltage
VDSS 600 V
Gate to Source Voltage
VGSS
±30
V
Drain Current (DC)
ID(DC)
±7.0
A
Drain Current (pulse)*
ID(pulse) ±28
A
Total Power Dissipation (Tc = 25 ˚C)
PT1
75 W
Total Power Dissipation (TA = 25 ˚C)
PT2
1.5 W
Storage Temperature
Tstg –55 to +150 ˚C
Channel Temperature
Tch 150 ˚C
Single Avalanche Current**
IAS 7.0 A
Single Avalanche Energy**
EAS 16.3 mJ
* PW 10 µs, Duty Cycle 1 %
** Starting Tch = 25 ˚C, RG = 25 , VGS = 20 V 0
PACKAGE DIMENSIONS
(in millimeters)
10.6 MAX.
4.8 MAX.
3.6 ± 0.2
10.0
1.3 ± 0.2
4
1 23
1.3 ± 0.2
0.5 ± 0.2
0.75 ± 0.1
2.54
2.8 ± 0.2
2.54
1. Gate
2. Drain
3. Source
4. Fin (Drain)
JEDEC: TO-220AB
MP-25 (TO-220)
(10.0)
4
4.8 MAX.
1.3 ± 0.2
1.0 ± 0.3
1.4 ± 0.2
(2.54) (2.54)
(0.5(0R.)8R)
0.5 ± 0.2
123
1. Gate
2. Drain
3. Source
4. Fin (Drain)
MP-25Z (SURFACE MOUNT TYPE)
Drain
Gate
Body
Diode
Source
Document No. TC-2513
(O. D. No. TC-8072)
Date Published February 1995 P
Printed in Japan
© 1995

1 Page



2SK2140 pdf, ピン配列
TYPICAL CHARACTERISTICS (TA = 25 ˚C)
DERATING FACTOR OF FORWARD BIAS
SAFE OPERATING AREA
100
80
60
40
20
0 20 40 60 80 100 120 140 160
TC - Case Temperature - ˚C
FORWARD BIAS SAFE OPERATING AREA
100
10
1.0
RDS (ON)
TC = 25
= 20
LimitedID(a(tDVC)GPSower
˚C
V) ID (pulse)
PW
=
100
s
Dissipatio1nmLismited
10
s
Single Pulse
0.1
1 10
100 1 000
VDS - Drain to Source Voltage - V
DRAIN CURRENT vs.
GATE TO SOURCE VOLTAGE
100
TC = –25 ˚C
25 ˚C
75 ˚C
10 125 ˚C
VDS = 10 V
Pulsed
1
0.1
0 5 10 15
VGS - Gate to Source Voltage - V
2SK2140, 2SK2140-Z
TOTAL POWER DISSIPATION vs.
CASE TEMPERATURE
80
60
40
20
0 20 40 60 80 100 120 140 160
TC - Case Temperature - ˚C
DRAIN CURRENT vs.
DRAIN TO SOURCE VOLTAGE
Pulsed
10 10 V
VGS = 20 V
8V
6V
5
0 5 10
VDS - Drain to Source Voltage - V
3


3Pages


2SK2140 電子部品, 半導体
SINGLE AVALANCHE CURRENT vs.
INDUCTIVE LOAD
50
10 IAS = 7 A
1.0
EAS = 16.3 mJ
RG = 25
VDD = 150 V
0.1 VGS = 20 V 0
Starting Tch = 25 ˚C
100 µ 1 m 10 m
L - Inductance - H
100 m
2SK2140, 2SK2140-Z
SINGLE AVALANCHE ENERGY vs.
STARTING CHANNEL TEMPERATURE
20 ID (peak) = ID (DC)
VDD = 150 V
16.3 mJ
15
10
5
0
25 50 75 100 125 150
Starting Tch-Starting Channel Temperature - ˚C
6

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