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1N6370 の電気的特性と機能

1N6370のメーカーはMicrosemiです、この部品の機能は「1500 Watt Low Clamping Factor Transient Voltage Suppressor」です。


製品の詳細 ( Datasheet PDF )

部品番号 1N6370
部品説明 1500 Watt Low Clamping Factor Transient Voltage Suppressor
メーカ Microsemi
ロゴ Microsemi ロゴ 




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1N6370 Datasheet, 1N6370 PDF,ピン配置, 機能
1N6358 – 1N6372 or
MPT-10 – MPT-45C
Available
1500 Watt Low Clamping Factor
Transient Voltage Suppressor
DESCRIPTION
This Transient Voltage Suppressor (TVS) series for 1N6358 through 1N6372 are JEDEC registered
selections for both unidirectional and bidirectional devices. The 1N6358 through 1N6364 are
unidirectional and the 1N6366 through 1N6372 are bidirectional where they all provide a very low
specified clamping factor for minimal clamping voltages (VC) above their respective breakdown
voltages (VBR) as specified herein. They are most often used in protecting sensitive components
from inductive switching transients or induced secondary lightning effects as found in lower surge
levels of IEC61000-4-5. They are also very successful in protecting airborne avionics and electrical
systems. Since their response time is virtually instantaneous, they can also protect from ESD and
EFT per IEC61000-4-2 and IEC61000-4-4.
Important: For the latest information, visit our website http://www.microsemi.com.
FEATURES
Screening in
reference to
MIL-PRF-19500
available
Unidirectional and bidirectional TVS series in axial package for thru-hole mounting.
Suppresses transients up to 1500 watts @ 10/1000 µs (see figure 1).
tclamping (0 volts to V(BR) min):
Unidirectional – Less than 100 picoseconds.
Bidirectional – Less than 5 nanoseconds.
Working voltage (VWM) range 10 V to 45 V.
Low clamping factor (ratio of actual VC/VBR): 1.33 @ full rated power and 1.20 @ 50% rated power.
Hermetically sealed DO-13 metal package.
Upscreening in reference to MIL-PRF-19500 is available.
RoHS compliant versions available.
DO-13 (DO-202AA)
Package
APPLICATIONS / BENEFITS
Designed to protect bipolar and MOS microprocessor based systems
Protection from switching transients and induced RF.
Protection from ESD & EFT per IEC 61000-4-2 and IEC 61000-4-4.
Secondary lightning protection per IEC61000-4-5 with 42 ohms source impedance:
Class 1, 2 & 3: 1N6358 to 1N6372
Class 4: 1N6358 to 1N6362 and 1N6366 to 1N6370
Secondary lightning protection per IEC61000-4-5 with 12 ohms source impedance:
Class 1 & 2: 1N6358 to 1N6372
Class 3: 1N6358 to 1N6362 and 1N6366 to 1N6370
Class 4: 1N6358 and 1N6366
Secondary lightning protection per IEC61000-4-5 with 2 ohms source impedance:
Class 2: 1N6358 to 1N6361 and 1N6366 to 1N6369
Class 3: 1N6358 and 1N6366
Inherently radiation hard as described in Microsemi “MicroNote 050”.
MAXIMUM RATINGS
Parameters/Test Conditions
Symbol
Value
Unit
Junction and Storage Temperature
TJ and TSTG -65 to +175
ºC
Thermal Resistance, Junction to Lead @ 0.375 inch (10
mm) from body
R ӨJL
50 ºC/W
Thermal Resistance, Junction to Ambient (1)
R ӨJA
110 ºC/W
Peak Pulse Power @ TL = +25 ºC (2)
P PP
1500
W
Rated Average Power Dissipation @ TL ≤ +125 ºC (3)
P M(AV)
1W
Solder Temperature @ 10 s
TSP 260 oC
Notes: 1. When mounted on FR4 PC board with 4 mm2 copper pads (1 oz) and track width 1 mm, length 25 mm.
2. At 10/1000 µs with repetition rate of 0.01% or less (see figures 1, 2, & 4).
3. At 3/8 inch (10 mm) from body (see derating in figure 5). TVS devices are not typically used for dc
power dissipation and are instead operated at or less than their rated standoff voltage (VWM) except for
transients that briefly drive the device into avalanche breakdown (VBR to VC region).
MSC – Lawrence
6 Lake Street,
Lawrence, MA 01841
Tel: 1-800-446-1158 or
(978) 620-2600
Fax: (978) 689-0803
MSC – Ireland
Gort Road Business Park,
Ennis, Co. Clare, Ireland
Tel: +353 (0) 65 6840044
Fax: +353 (0) 65 6822298
Website:
www.microsemi.com
T4-LDS-0292, Rev. 1 (121800)
©2013 Microsemi Corporation
Page 1 of 7

1 Page





1N6370 pdf, ピン配列
1N6358 – 1N6372 or
MPT-10 – MPT-45C
ELECTRICAL CHARACTERISTICS @ 25 oC (Both Polarities)
Unidirectional
MICROSEMI
PART NUMBER
STANDOFF
VOLTAGE
(NOTE 1)
V WM
Volts
MAXIMUM
REVERSE
LEAKAGE
@V WM
ID
µA
MINIMUM*
BREAKDOWN
VOLTAGE
@ 1.0 mA
V(BR) (min)
Volts
1N6358 MPT-10
10.0
2
11.7
1N6359 MPT-12
12.0
2
14.1
1N6360 MPT-15
15.0
2
17.6
1N6361 MPT-18
18.0
2
21.2
1N6362 MPT-22
22.0
2
25.9
1N6363 MPT-36
36.0
2
42.4
1N6364 MPT-45
45.0
2
52.9
VF at 100 amps peak is 3.5 volts maximum at 8.3 ms half-sine wave.
MAXIMUM
CLAMPING
VOLTAGE
(Fig. 2)
IPP1 = 1A
VC
Volts
13.7
16.1
20.1
24.2
29.8
50.6
63.3
MAXIMUM
CLAMPING
VOLTAGE
(Fig. 2)
@ IPP2 = 10A
VC
Volts
14.1
16.5
20.6
25.2
32.0
54.3
70.0
Bidirectional
STANDOFF
VOLTAGE
(NOTE 1)
V WM
MICROSEMI
PART NUMBER
Volts
1N6366 MPT-10C
10.0
1N6367 MPT-12C
12.0
1N6368 MPT-15C
15.0
1N6369 MPT-18C
18.0
1N6370 MPT-22C
22.0
1N6371 MPT-36C
36.0
1N6372 MPT-45C
45.0
“C” suffix indicates bidirectional
MAXIMUM
REVERSE
LEAKAGE
@V WM
ID
µA
2
2
2
2
2
2
2
MINIMUM*
BREAKDOWN
VOLTAGE
@ 1.0 mA
V(BR) (min)
Volts
11.7
14.1
17.6
21.2
25.9
42.4
52.9
MAXIMUM
CLAMPING
VOLTAGE
(Fig. 2)
IPP1 = 1A
VC
Volts
14.1
16.7
20.8
24.8
30.8
50.6
63.3
MAXIMUM
CLAMPING
VOLTAGE
(Fig. 2)
@ IPP2 = 10A
VC
Volts
14.5
17.1
21.4
25.5
32.0
54.3
70.0
MAXIMUM
PEAK PULSE
CURRENT
I PP3
A
90
70
60
50
40
23
19
MAXIMUM
PEAK PULSE
CURRENT
I PP3
A
90
70
60
50
40
23
19
NOTE 1: TVS devices are normally selected according to the reverse “standoff voltage” (VWM) which should be equal to or greater than the DC or
continuous peak operating voltage level.
* The minimum breakdown voltage as shown takes into consideration the + volt tolerance normally specified for power supply regulation on
most integrated circuit manufacturers data sheets. Similar devices are available with reduced clamping voltages where tighter regulated
power supply voltages are employed.
T4-LDS-0292, Rev. 1 (121800)
©2013 Microsemi Corporation
Page 3 of 7


3Pages


1N6370 電子部品, 半導体
GRAPHS
1N6358 – 1N6372 or
MPT-10 – MPT-45C
V(BR) – Breakdown Voltage – Volts
FIGURE 5
Typical Capacitance vs. Breakdown Voltage (Bidirectional Types)
TL – Lead Temperature °C
FIGURE 6
Steady-State and Peak Pulse Power Derating Curve
T4-LDS-0292, Rev. 1 (121800)
©2013 Microsemi Corporation
Page 6 of 7

6 Page



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部品番号部品説明メーカ
1N6370

Transient Voltage Suppressor

Digitron Semiconductors
Digitron Semiconductors
1N6370

1500 Watt Low Clamping Factor Transient Voltage Suppressor

Microsemi
Microsemi
1N6371

1500 Watt Low Clamping Factor Transient Voltage Suppressor

Microsemi
Microsemi
1N6372

1500 Watt Low Clamping Factor Transient Voltage Suppressor

Microsemi
Microsemi


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