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PDF 1N8162 Data sheet ( Hoja de datos )
| Número de pieza | 1N8162 | |
| Descripción | Low-Capacitance Transient Voltage Suppressors | |
| Fabricantes | Microsemi | |
| Logotipo |  |
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Hay una vista previa y un enlace de descarga de 1N8162 (archivo pdf) en la parte inferior de esta página. Total 6 Páginas | ||
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1N8149 – 1N8182
Available
Voidless-Hermetically-Sealed Unidirectional 150 W
Low-Capacitance Transient Voltage Suppressors
DESCRIPTION
This series of voidless-hermetically-sealed unidirectional low-capacitance Transient Voltage Suppressor
(TVS) designs are ideal for protecting higher frequency applications in high-reliability applications where
a failure cannot be tolerated. They include a unique rectifier diode in series and opposite direction from
the TVS to achieve a very low capacitance of 4 pF. This product series provides a working peak
“standoff” voltage selection from 6.8 to 170 volts with 150 watt ratings. They are very robust in hard-
glass construction and also use an internal metallurgical bond identified as Category 1 for high reliability
applications. These devices are also available in axial leaded packages for thru-hole mounting.
Important: For the latest information, visit our website http://www.microsemi.com.
FEATURES
High surge current and peak pulse power unidirectional protection for sensitive circuits.
Very low capacitance for high frequency or high baud rate applications.
Bidirectional capability with two devices in anti-parallel (see Figure 5).
Triple-layer passivation.
Internal “Category 1” metallurgical bonds.
Voidless hermetically sealed glass package.
RoHS compliant versions are available.
APPLICATIONS / BENEFITS
High reliability transient protection.
Extremely robust construction.
Working peak “standoff” voltage (VWM) from 6.8 to 170 volts.
Available as 150 W peak pulse power (PPP) at 10/1000 µs.
Lowest available capacitance for 150 W rated TVS.
ESD and EFT protection per IEC61000-4-2 and IEC61000-4-4 respectively.
Secondary lightning protection per select levels in IEC61000-4-5.
Flexible axial-leaded mounting terminals.
Nonsensitive to ESD per MIL-STD-750 method 1020.
Inherently radiation hard as described in Microsemi MicroNote 050.
“A” Package
Also available in:
“A” MELF package
(surface mount)
1N8149US – 1N8182US
MAXIMUM RATINGS
Parameters/Test Conditions
Junction and Storage Temperature
Capacitance at zero volts
Thermal Resistance junction to ambient
Peak Pulse Power at 25 oC (10µs/1000µs)
Impulse repetition rate (duty factor)
Steady State (Average) Power @ TA = 25 oC
Solder Temperature (10 s maximum)
Symbol
TJ and TSTG
C
RθJA
PPP
d.f
PM(AV)
Value
-55 to +175
4
150
150
0.01
1.0
260
Unit
oC
pF
oC/W
W
%
W
oC
Note: Steady-state power ratings with reference to ambient are for PC boards where thermal resistance from
mounting point to ambient is sufficiently controlled where TJ(MAX) is not exceeded.
MSC – Lawrence
6 Lake Street,
Lawrence, MA 01841
1-800-446-1158
(978) 620-2600
Fax: (978) 689-0803
MSC – Ireland
Gort Road Business Park,
Ennis, Co. Clare, Ireland
Tel: +353 (0) 65 6840044
Fax: +353 (0) 65 6822298
Website:
www.microsemi.com
T4-LDS-xxxx, Rev x (10-02-14)
©2013 Microsemi Corporation
Page 1 of 6
1 page  
GRAPHS
1N8149 – 1N8182
PULSE CONDITIONS
DEFINED IN FIGURES 1 & 2
TA Ambient Temperature oC
FIGURE 3
DERATING CURVE
SCHEMATIC APPLICATIONS
The TVS low capacitance device configuration described in this data sheet is shown in Figure 4 involving a TVS and a unique
diode in series and opposite direction. For bidirectional low capacitance TVS applications, use two (2) low capacitance TVS
devices as described in this data sheet in anti-parallel as shown in Figure 5. This will result in twice the capacitance of Figure 4
specified in this data sheet.
Cathode>
>
FIGURE 4
Low Capacitance TVS
FIGURE 5
Bidirectional configuration
(2 Low Capacitance TVS
devices in anti-parallel)
T4-LDS-xxxx, Rev x (10-02-14)
©2013 Microsemi Corporation
Page 5 of 6
5 Page | ||
| Páginas | Total 6 Páginas | |
| PDF Descargar | [ Datasheet 1N8162.PDF ] | |
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