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H30R1602 の電気的特性と機能

H30R1602のメーカーはInfineonです、この部品の機能は「IHW30N160R2」です。


製品の詳細 ( Datasheet PDF )

部品番号 H30R1602
部品説明 IHW30N160R2
メーカ Infineon
ロゴ Infineon ロゴ 




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H30R1602 Datasheet, H30R1602 PDF,ピン配置, 機能
IHW30N160R2
Soft Switching Series
TrenchStop® Reverse Conducting (RC-)IGBT with monolithic body diode
Features:
Powerful monolithic Body Diode with very low forward voltage
Body diode clamps negative voltages
Trench and Fieldstop technology for 1600 V applications offers :
- very tight parameter distribution
G
- high ruggedness, temperature stable behavior
NPT technology offers easy parallel switching capability due to
positive temperature coefficient in VCE(sat)
Low EMI
Qualified according to JEDEC1 for target applications
PG-TO-247-3
Pb-free lead plating; RoHS compliant
Complete product spectrum and PSpice Models : http://www.infineon.com/igbt/
Applications:
Inductive Cooking
Soft Switching Applications
C
E
Type
VCE
IC
VCE(sat),Tj=25°C
Tj,max
Marking
Package
IHW30N160R2
1600V 30A
1.8V
175°C H30R1602 PG-TO-247-3
Maximum Ratings
Parameter
Symbol
Value
Unit
Collector-emitter voltage
DC collector current
TC = 25°C
TC = 100°C
Pulsed collector current, tp limited by Tjmax
Turn off safe operating area (VCE 1600V, Tj 175°C)
Diode forward current
TC = 25°C
TC = 100°C
Diode pulsed current, tp limited by Tjmax
Diode surge non repetitive current, tp limited by Tjmax
TC = 25°C, tp = 10ms, sine halfwave
TC = 25°C, tp 2.5µs, sine halfwave
TC = 100°C, tp 2.5µs, sine halfwave
Gate-emitter voltage
Transient Gate-emitter voltage (tp < 10 µs, D < 0.01)
Power dissipation TC = 25°C
Operating junction temperature
Storage temperature
Soldering temperature, 1.6mm (0.063 in.) from case for 10s
VCE
IC
ICpuls
-
IF
IFpuls
IFSM
VGE
Ptot
Tj
Tstg
-
1600
60
30
90
90
60
30
90
50
130
120
±20
±25
312
-40...+175
-55...+175
260
V
A
V
W
°C
1 J-STD-020 and JESD-022
Power Semiconductors
1
Rev. 2.1 Nov 09

1 Page





H30R1602 pdf, ピン配列
IHW30N160R2
Soft Switching Series
Dynamic Characteristic
Input capacitance
Output capacitance
Reverse transfer capacitance
Gate charge
Ciss
Coss
Crss
QGate
Internal emitter inductance
LE
measured 5mm (0.197 in.) from case
VCE=25V,
VGE=0V,
f=1MHz
VCC=1280V,
IC=30A;VGE=15V
- 2740 -
- 68.1 - pF
- 58.7 -
- 94 - nC
- 13 - nH
Switching Characteristic, Inductive Load, at Tj=25 °C
Parameter
Symbol
Conditions
IGBT Characteristic
Turn-off delay time
Fall time
Turn-on energy
Turn-off energy
Total switching energy
td(off)
tf
Eon
Eoff
Ets
Tj=25°C,
VCC=600V,IC=30A
VGE=0 /15V,
RG=10
min.
-
-
-
-
-
Value
typ.
max. Unit
525 -
38.3
- ns
--
2.53
2.53
- mJ
-
Switching Characteristic, Inductive Load, at Tj=175 °C
Parameter
Symbol
Conditions
IGBT Characteristic
Turn-off delay time
Fall time
Turn-on energy
Turn-off energy
Total switching energy
td(off)
tf
Eon
Eoff
Ets
Tj=175°C
VCC=600V,IC=30A,
VGE= 0 /15V,
RG= 10
min.
-
-
-
-
-
Value
Typ.
564
111
-
4.37
4.37
Unit
max.
-
- ns
-
- mJ
-
Power Semiconductors
3
Rev. 2.1 Nov 09


3Pages


H30R1602 電子部品, 半導体
IHW30N160R2
Soft Switching Series
td(off)
1000ns
td(off)
100ns
tf
100ns
tf
10ns
0A 10A 20A 30A 40A 50A 60A 70A
IC, COLLECTOR CURRENT
Figure 9. Typical switching times as a
function of collector current
(inductive load, TJ=175°C,
VCE=600V, VGE=0/15V, RG=10,
Dynamic test circuit in Figure E)
10Ω 20Ω 30Ω 40Ω 50Ω 60Ω 70Ω
RG, GATE RESISTOR
Figure 10. Typical switching times as a
function of gate resistor
(inductive load, TJ=175°C, VCE=600V,
VGE=0/15V, IC=30A,
Dynamic test circuit in Figure E)
100ns
td(off)
tf
10ns
25°C 50°C 75°C 100°C 125°C 150°C
TJ, JUNCTION TEMPERATURE
Figure 11. Typical switching times as a
function of junction temperature
(inductive load, VCE=600V,
VGE=0/15V, IC=30A, RG=10,
Dynamic test circuit in Figure E)
6V
max.
5V
typ.
4V
min.
3V
2V
-50°C
0°C
50°C
100°C
TJ, JUNCTION TEMPERATURE
Figure 12. Gate-emitter threshold voltage as a
function of junction temperature
(IC = 0.15mA)
Power Semiconductors
6
Rev. 2.1 Nov 09

6 Page



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部品番号部品説明メーカ
H30R1602

IHW30N160R2

Infineon
Infineon


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