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PDF DF10G5M4N Data sheet ( Hoja de datos )
| Número de pieza | DF10G5M4N | |
| Descripción | Diode ( Rectifier ) | |
| Fabricantes | Toshiba Semiconductor | |
| Logotipo |  |
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DF10G5M4N
TOSHIBA Diodes for Protecting against ESD
DF10G5M4N
Application
- ESD Protection
Note: This product is designed for protection against electrostatic discharge
(ESD) and is not intended for any other purpose, including, but not limited to,
voltage regulation.
Abusolute Maximum Ratings (Ta = 25°C)
Characteristic
Symbol
Rating
Unit
Electrostatic discharge voltage
IEC61000-4-2(Contact)
IEC61000-4-2(Air)
Peak pulse power ( tp = 8 / 20 s )
Maximum peak pulse current ( tp = 8 / 20 s )
VESD
(Note 1)
PPK
IPP
(Note 2)
± 23
± 25
30
2
kV
W
A
Junction temperature
Tj 150 C
Storage temperature range
Tstg −55 to 150 C
Note1 : according to IEC61000-4-2
Note2 : according to IEC61000-4-5
Note3:Using continuously under heavy loads (e.g. the application of high
temperature/current/voltage and the significant change in temperature, etc.) may
cause this product to decrease in the reliability significantly even if the operating
conditions (i.e. operating temperature/current/voltage, etc.) are within the
absolute maximum ratings.Please design the appropriate reliability upon
reviewing the Toshiba Semiconductor Reliability Handbook (“Handling
Precautions”/ “Derating Concept and Methods”) and individual reliability data
(i.e. reliability test report and estimated failure rate, etc).
DFN10
1:I/O 6:NC
2:I/O 7:NC
3:GND 8:NC
4:I/O 9:NC
5:I/O 10:NC
JEDEC
JEITA
TOSHIBA
Weight: 3.2mg (typ.)
Electrical Characteristics (Ta = 25°C)
VRWM : Working peak reverse voltage
VBR : Reverse breakdown voltage
IBR : Reverse breakdown current
IR : Reverse Current
VC : Clamping Voltage
IPP : Peak pulse current
RDYN : Dynamic resistance
1 2015-09-29
1 page  
Insertion Loss (S21)
S21-f
Ta=25℃
DF10G5M4N
Frequency ｆ (GHz)
IN →
SG
S21
OUT →
Network
ＤＵＴ Analyzer
Fig. S21 measurement circuit
Note: The above characteristics curves are presented for reference only and not guaranteed by production test,
unless otherwise noted.
5 2015-09-29
5 Page | ||
| Páginas | Total 8 Páginas | |
| PDF Descargar | [ Datasheet DF10G5M4N.PDF ] | |
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