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IRGP4790DPbF の電気的特性と機能

IRGP4790DPbFのメーカーはInternational Rectifierです、この部品の機能は「INSULATED GATE BIPOLAR TRANSISTOR」です。


製品の詳細 ( Datasheet PDF )

部品番号 IRGP4790DPbF
部品説明 INSULATED GATE BIPOLAR TRANSISTOR
メーカ International Rectifier
ロゴ International Rectifier ロゴ 




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IRGP4790DPbF Datasheet, IRGP4790DPbF PDF,ピン配置, 機能
  IRGP4790DPbF
IRGP4790D-EPbF
VCES = 650V
IC = 90A, TC =100°C
Insulated Gate Bipolar Transistor with Ultrafast Soft Recovery Diode
  C 
tSC 5.5µs, TJ(max) = 175°C
VCE(ON) typ. = 1.7V @ IC = 75A
Applications
 Industrial Motor Drive
 UPS
 Solar Inverters
 Welding
Features
Low VCE(ON) and Switching Losses
5.5µs Short Circuit SOA
Square RBSOA
Maximum Junction Temperature 175°C
Positive VCE (ON) Temperature Coefficient
Lead-Free, RoHs compliant
G
E
n-channel
G
Gate
E
GC
IRGP4790DPbF 
TO247AC 
C
Collector
E
GC
IRGP4790DEPbF 
TO247AD 
E
Emitter
Benefits
High Efficiency in a Wide Range of Applications
Rugged Transient Performance
Increased Reliability
Excellent Current Sharing in Parallel Operation
Environmentally friendly
Base part number
IRGP4790DPbF
IRGP4790D-EPbF
Package Type
TO-247AC
TO-247AD
Standard Pack
Form
Quantity
Tube
25
Tube
25
Orderable Part Number
IRGP4790DPbF
IRGP4790D-EPbF
Absolute Maximum Ratings
Parameter
Max.
Units
VCES
IC @ TC = 25°C
IC @ TC = 100°C
ICM
ILM
IF @ TC = 25°C
IF @ TC = 100°C
IFM
VGE
PD @ TC = 25°C
PD @ TC = 100°C
TJ
TSTG
Collector-to-Emitter Voltage
Continuous Collector Current
Continuous Collector Current
Pulse Collector Current, VGE = 15V
Clamped Inductive Load Current, VGE = 20V
Diode Continuous Forward Current
Diode Continuous Forward Current
Diode Maximum Forward Current
Continuous Gate-to-Emitter Voltage
Maximum Power Dissipation
Maximum Power Dissipation
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 sec.
Mounting Torque, 6-32 or M3 Screw
650
140
90
225
300
65
40
300
±20
455
230
-40 to +175
300 (0.063 in. (1.6mm) from case)
10 lbf·in (1.1 N·m)
V
A
V
W
C
Thermal Resistance
Parameter
RJC (IGBT)
RJC (Diode)
RCS
RJA
Thermal Resistance Junction-to-Case-(each IGBT)
Thermal Resistance Junction-to-Case-(each Diode)
Thermal Resistance, Case-to-Sink (flat, greased surface)
Thermal Resistance, Junction-to-Ambient (typical socket mount)
Min.
–––
–––
–––
–––
Typ.
–––
–––
0.24
–––
Max.
0.33
1.1
–––
40
Units
°C/W
1 www.irf.com © 2014 International Rectifier
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November 12, 2014

1 Page





IRGP4790DPbF pdf, ピン配列
 
140
120
100
80
Square Wave:
VCC
60 I
IRGP4790DPbF/IRGP4790D-EPbF
For both:
Duty cycle : 50%
Tj = 175°C
Tcase = 100°C
Gate drive as specified
Power Dissipation = 208.3W
40 Diode as specified
20
0.1
1 10
f , Frequency ( kHz )
Fig. 1 - Typical Load Current vs. Frequency
(Load Current = IRMS of fundamental)
100
160
140
120
100
80
60
40
20
0
25 50 75 100 125 150 175
TC (°C)
Fig. 2 - Maximum DC Collector Current vs.
Case Temperature
1000
500
400
300
200
100
0
25 50 75 100 125 150 175
TC (°C)
Fig. 3 - Power Dissipation vs.
Case Temperature
1000
100
10µsec
10 100µsec
1
Tc = 25°C
Tj = 175°C
Single Pulse
0.1
1 10
100
VCE (V)
1msec
DC
1000 10000
Fig. 4 - Forward SOA
TC = 25°C; TJ 175°C; VGE = 15V
3 www.irf.com © 2014 International Rectifier
100
10
1
10
100
VCE (V)
1000
Fig. 5 - Reverse Bias SOA
TJ = 175°C; VGE = 20V
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November 12, 2014


3Pages


IRGP4790DPbF 電子部品, 半導体
 
30
RG = 10
25
RG = 22
20 RG = 47
15
RG = 100
10
20 40 60 80 100 120 140 160
IF (A)
Fig. 18 - Typ. Diode IRR vs. IF
TJ = 175°C
30
25
20
15
10
200 250 300 350 400 450 500 550 600
diF /dt (A/µs)
Fig. 20 - Typ. Diode IRR vs. diF/dt
VCC = 400V; VGE = 15V; IF = 75A; TJ = 175°C
700
650
RG = 10
600
RG = 22
550
500 RG = 47
450
RG = 100
400
20 40 60 80 100 120 140 160
IF (A)
Fig. 22 - Typ. Diode ERR vs. IF
TJ = 175°C
6 www.irf.com © 2014 International Rectifier
IRGP4790DPbF/IRGP4790D-EPbF
30
25
20
15
10
5
0 20 40 60 80 100
RG (
Fig. 19 - Typ. Diode IRR vs. RG
TJ = 175°C
4.4
150A
4.0
75A 10
3.6 22
3.2
47
100
2.8
38A
2.4
200 300 400 500 600 700 800
diF /dt (A/µs)
Fig. 21 - Typ. Diode QRR vs. diF/dt
VCC = 400V; VGE = 15V; TJ = 175°C
24 400
20 Tsc
Isc 330
16 260
12 190
8 120
4 50
8 10 12 14 16 18
VGE (V)
Fig. 23 - VGE vs. Short Circuit Time
VCC = 400V; TC = 150°C
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November 12, 2014

6 Page



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部品番号部品説明メーカ
IRGP4790DPbF

INSULATED GATE BIPOLAR TRANSISTOR

International Rectifier
International Rectifier


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