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IRGP35B60PD-EPのメーカーはInternational Rectifierです、この部品の機能は「SMPS IGBT」です。 |
部品番号 | IRGP35B60PD-EP |
| |
部品説明 | SMPS IGBT | ||
メーカ | International Rectifier | ||
ロゴ | |||
このページの下部にプレビューとIRGP35B60PD-EPダウンロード(pdfファイル)リンクがあります。 Total 10 pages
SMPS IGBT
PD - 96169
IRGP35B60PD-EP
WARP2 SERIES IGBT WITH
ULTRAFAST SOFT RECOVERY DIODE
Applications
• Telecom and Server SMPS
• PFC and ZVS SMPS Circuits
• Uninterruptable Power Supplies
• Consumer Electronics Power Supplies
• Lead-Free
Features
• NPT Technology, Positive Temperature Coefficient
• Lower VCE(SAT)
• Lower Parasitic Capacitances
• Minimal Tail Current
• HEXFRED Ultra Fast Soft-Recovery Co-Pack Diode
• Tighter Distribution of Parameters
• Higher Reliability
Benefits
• Parallel Operation for Higher Current Applications
• Lower Conduction Losses and Switching Losses
• Higher Switching Frequency up to 150KHz
C
G
E
n-channel
VCES = 600V
VCE(on) typ. = 1.85V
@ VGE = 15V IC = 22A
Equivalent MOSFET
Parameters
RCE(on) typ. = 84mΩ
ID (FET equivalent) = 35A
TO-247AD
Absolute Maximum Ratings
Parameter
VCES
IC @ TC = 25°C
IC @ TC = 100°C
ICM
ILM
IF @ TC = 25°C
IF @ TC = 100°C
IFRM
VGE
PD @ TC = 25°C
PD @ TC = 100°C
TJ
TSTG
Collector-to-Emitter Voltage
Continuous Collector Current
Continuous Collector Current
Pulse Collector Current (Ref. Fig. C.T.4)
dClamped Inductive Load Current
Diode Continous Forward Current
Diode Continous Forward Current
eMaximum Repetitive Forward Current
Gate-to-Emitter Voltage
Maximum Power Dissipation
Maximum Power Dissipation
Operating Junction and
Storage Temperature Range
Soldering Temperature for 10 sec.
Mounting Torque, 6-32 or M3 Screw
Thermal Resistance
Parameter
RθJC (IGBT)
RθJC (Diode)
RθCS
RθJA
Thermal Resistance Junction-to-Case-(each IGBT)
Thermal Resistance Junction-to-Case-(each Diode)
Thermal Resistance, Case-to-Sink (flat, greased surface)
Thermal Resistance, Junction-to-Ambient (typical socket mount)
Weight
1
Max.
600
60
34
120
120
40
15
60
±20
308
123
-55 to +150
300 (0.063 in. (1.6mm) from case)
10 lbf·in (1.1 N·m)
Units
V
A
V
W
°C
Min.
–––
–––
–––
–––
–––
Typ.
–––
–––
0.24
–––
6.0 (0.21)
Max.
0.41
1.7
–––
40
–––
Units
°C/W
g (oz)
08/06/08
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1 Page 70
60
50
40
30
20
10
0
0 20 40 60 80 100 120 140 160
TC (°C)
Fig. 1 - Maximum DC Collector Current vs.
Case Temperature
1000
100
10
1
10
100
VCE (V)
Fig. 3 - Reverse Bias SOA
TJ = 150°C; VGE =15V
70
60
VGE = 15V
VGE = 12V
VGE = 10V
50 VGE = 8.0V
VGE = 6.0V
40
1000
30
20
10
0
012345
VCE (V)
Fig. 5 - Typ. IGBT Output Characteristics
TJ = 25°C; tp = 80µs
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IRGP35B60PD-EP
350
300
250
200
150
100
50
0
0 20 40 60 80 100 120 140 160
TC (°C)
Fig. 2 - Power Dissipation vs. Case
Temperature
70
VGE = 15V
60 VGE = 12V
VGE = 10V
50
VGE = 8.0V
VGE = 6.0V
40
30
20
10
0
012345
VCE (V)
Fig. 4 - Typ. IGBT Output Characteristics
TJ = -40°C; tp = 80µs
70
60
VGE = 15V
VGE = 12V
VGE = 10V
50 VGE = 8.0V
VGE = 6.0V
40
30
20
10
0
012345
VCE (V)
Fig. 6 - Typ. IGBT Output Characteristics
TJ = 125°C; tp = 80µs
3
3Pages IRGP35B60PD-EP
100
VR = 200V
TJ = 125°C
TJ = 25°C
80
I F = 30A
60
I F = 15A
40
IF = 5.0A
20
100
dif /dt - (A/µs)
1000
Fig. 19 - Typical Reverse Recovery vs. dif/dt
800
VR = 200V
TJ = 125°C
TJ = 25°C
600
IF = 30A
400
I F = 15A
IF = 5.0A
200
0
100
dif /dt - (A/µs)
1000
Fig. 21 - Typical Stored Charge vs. dif/dt
100
VR = 200V
TJ = 125°C
TJ = 25°C
IF = 15A
10
IF = 30A
I F = 5.0A
1
100 1000
di f /dt - (A/µs)
Fig. 20 - Typical Recovery Current vs. dif/dt
1000
VR = 200V
TJ = 125°C
TJ = 25°C
IF = 5.0A
I F = 15A
I F = 30A
100
100
di f /dt - (A/µs)
1000
Fig. 22 - Typical di(rec)M/dt vs. dif/dt,
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6 Page | |||
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部品番号 | 部品説明 | メーカ |
IRGP35B60PD-EP | SMPS IGBT | International Rectifier |