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PDF IRGIB15B60KD1P Data sheet ( Hoja de datos )
| Número de pieza | IRGIB15B60KD1P | |
| Descripción | INSULATED GATE BIPOLAR TRANSISTOR | |
| Fabricantes | International Rectifier | |
| Logotipo |  |
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PD- 94914
IRGIB15B60KD1P
INSULATED GATE BIPOLAR TRANSISTOR WITH
ULTRAFAST SOFT RECOVERY DIODE
C
Features
• Low VCE (on) Non Punch Through IGBT Technology.
• Low Diode VF.
• 10µs Short Circuit Capability.
• Square RBSOA.
• Ultrasoft Diode Reverse Recovery Characteristics.
• Positive VCE (on) Temperature Coefficient.
• Maximum Junction Temperature Rated at 175°C
• Lead-Free
Benefits
• Benchmark Efficiency for Motor Control.
G
E
n-channel
• Rugged Transient Performance.
• Low EMI.
• Excellent Current Sharing in Parallel Operation.
VCES = 600V
IC = 12A, TC=100°C
tsc > 10µs, TJ=150°C
VCE(on) typ. = 1.80V
Absolute Maximum Ratings
Parameter
VCES
Collector-to-Emitter Voltage
IC @ TC = 25°C Continuous Collector Current
IC @ TC = 100°C Continuous Collector Current
cICM Pulse Collector Current (Ref.Fig.C.T.5)
ILM Clamped Inductive Load current
IF @ TC = 25°C Diode Continuous Forward Current
IF @ TC = 100°C Diode Continuous Forward Current
IFM Diode Maximum Forward Current
VISOL
RMS Isolation Voltage, Terminal to Case, t = 1 min
VGE Gate-to-Emitter Voltage
PD @ TC = 25°C Maximum Power Dissipation
PD @ TC = 100°C Maximum Power Dissipation
TJ Operating Junction and
TSTG
Storage Temperature Range
Soldering Temperature for 10 sec.
Mounting Torque, 6-32 or M3 Screw
Thermal / Mechanical Characteristics
Parameter
RθJC Junction-to-Case- IGBT
RθJC Junction-to-Case- Diode
RθCS
Case-to-Sink, flat, greased surface
RθJA Junction-to-Ambient, typical socket mount
Wt Weight
www.irf.com
TO-220
Full-Pak
Max.
600
19
12
38
38
19
12
38
2500
±20
52
26
-55 to +175
300 (0.063 in. (1.6mm) from case)
10 lbf.in (1.1N.m)
Units
V
A
V
W
°C
Min.
–––
–––
–––
–––
–––
Typ.
–––
–––
0.50
–––
2.0
Max.
2.9
4.6
–––
62
–––
Units
°C/W
g
1
12/30/03
1 page  
20
18
16
14
12
10
8
6
4
2
0
5
ICE = 7.5A
ICE = 15A
ICE = 30A
10 15
VGE (V)
20
Fig. 9 - Typical VCE vs. VGE
TJ = -40°C
IRGIB15B60KD1P
20
18
16
14
12
10
8
6
4
2
0
5
ICE = 7.5A
ICE = 15A
ICE = 30A
10 15
VGE (V)
Fig. 10 - Typical VCE vs. VGE
TJ = 25°C
20
20
18
16
14
12
10
8
6
4
2
0
5
ICE = 7.5A
ICE = 15A
ICE = 30A
10 15
VGE (V)
20
Fig. 11 - Typical VCE vs. VGE
TJ = 150°C
www.irf.com
70
60
TJ = 25°C
TJ = 150°C
50
40
30
20
TJ = 150°C
10
0
05
TJ = 25°C
10
VGE (V)
15
Fig. 12 - Typ. Transfer Characteristics
VCE = 50V; tp = 10µs
5
5 Page 
600 30
500 tf
25
400 20
90% ICE
300 15
200 10
5% VCE
100
5% ICE
5
00
-100
Eoff Loss
-5
0.1 0.3 0.5 0.7
time(µs)
Fig. WF1- Typ. Turn-off Loss Waveform
@ TJ = 150°C using Fig. CT.4
100 20
0
-100
-200
QRR
tRR
15
10
5
-300
0
-400
-500
-600
Peak
IRR
-700
10%
Peak
IRR
-5
-10
-15
-20
-800
-25
-900
-30
0.10 0.20 0.30 0.40 0.50
time (µS)
Fig. WF3- Typ. Diode Recovery Waveform
@ TJ = 150°C using Fig. CT.4
www.irf.com
IRGIB15B60KD1P
800 40
700
600 tr
500
400
TEST CURRENT
35
30
90% test current
25
20
300 15
200 10
10% test current
100
5% VCE
5
0
-100
0.2
Eon Loss
0
-5
0.4 0.6
time (µs)
Fig. WF2- Typ. Turn-on Loss Waveform
@ TJ = 150°C using Fig. CT.4
450 400
400 350
350 300
300 250
250 200
200 150
150 100
100 50
50 0
0 -50
0 10 20 30 40 50
Time (uS)
Fig. WF4- Typ. S.C Waveform
@ TC = 150°C using Fig. CT.3
11
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| PDF Descargar | [ Datasheet IRGIB15B60KD1P.PDF ] | |
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