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PDF IRGB4064DPbF Data sheet ( Hoja de datos )
| Número de pieza | IRGB4064DPbF | |
| Descripción | INSULATED GATE BIPOLAR TRANSISTOR | |
| Fabricantes | International Rectifier | |
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INSULATED GATE BIPOLAR TRANSISTOR WITH
ULTRAFAST SOFT RECOVERY DIODE
Features
• Low VCE (on) Trench IGBT Technology
• Low Switching Losses
• Maximum Junction temperature 175 °C
• 5µs SCSOA
• Square RBSOA
• 100% of The Parts Tested for ILM
• Positive VCE (on) Temperature Coefficient.
• Ultra Fast Soft Recovery Co-pak Diode
• Tighter Distribution of Parameters
• Lead-Free Package
Benefits
• High Efficiency in a Wide Range of Applications
• Suitable for a Wide Range of Switching Frequencies due
to Low VCE (ON) and Low Switching Losses
• Rugged Transient Performance for Increased Reliability
• Excellent Current Sharing in Parallel Operation
• Low EMI
PD - 97113
IRGB4064DPbF
C
G
E
n-channel
C
VCES = 600V
IC = 10A, TC = 100°C
tsc > 5µs, Tjmax = 175°C
VCE(on) typ. = 1.6V
G
Gate
E
C
G
TO-220AB
C
Collector
E
Emitter
Absolute Maximum Ratings
Parameter
VCES
IC@ TC = 25°C
IC@ TC = 100°C
ICM
ILM
IF@TC=25°C
IF@TC=100°C
IFM
VGE
PD @ TC =25°
PD @ TC =100°
TJ
TSTG
Collector-to-Emitter Breakdown Voltage
Continuous Collector Current
Continuous Collector Current
Pulsed Collector Current
Clamped Inductive Load Current c
Diode Continuous Forward Current
Diode Continuous Forward Current
Diode Maximum Forward Current d
Continuous Gate-to-Emitter Voltage
Transient Gate-to-Emitter Voltage
Maximum Power Dissipation
Maximum Power Dissipation
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
Mounting Torque, 6-32 or M3 Screw
Thermal Resistance
Parameter
RθJC
RθJC
RθCS
RθJA
Wt
Junction-to-Case - IGBT e
Junction-to-Case - Diode e
Case-to-Sink, flat, greased surface
Junction-to-Ambient, typical socket mount e
Weight
1
Max.
600
20
10
40
40
20
10
40
±20
±30
101
50
-55 to + 175
Units
V
A
V
W
°C
300 (0.063 in. (1.6mm) from case)
10 lbf·in (1.1 N·m)
Min.
–––
–––
–––
–––
Typ.
–––
–––
0.50
–––
1.44
Max.
1.49
3.66
–––
62
Units
°C/W
g
www.irf.com
11/28/06
1 page  
600
500
400
300 EOFF
200
EON
100
0
0 4 8 12 16 20 24
IC (A)
Fig. 13 - Typ. Energy Loss vs. IC
TJ = 175°C; L = 1mH; VCE = 400V, RG = 22Ω; VGE = 15V.
350
EOFF
300
250
200 EON
150
100
50
0
0 25 50 75 100 125
RG (Ω)
Fig. 15 - Typ. Energy Loss vs. RG
TJ = 175°C; L = 1mH; VCE = 400V, ICE = 10A; VGE = 15V
24
20
RG =10 Ω
16
RG =22 Ω
12 RG =47 Ω
8 RG = 100 Ω
4
0
0 4 8 12 16 20
IF (A)
www.irf.com
Fig. 17 - Typical Diode IRR vs. IF
TJ = 175°C
24
IRGB4064DPbF
1000
100 tdOFF
tF
tdON
10 tR
1
0 4 8 12 16 20
IC (A)
Fig. 14 - Typ. Switching Time vs. IC
TJ = 175°C; L=1mH; VCE= 400V
RG= 22Ω; VGE= 15V
1000
24
100 tdOFF
tdON
tF
tR
10
0 25 50 75 100 125
RG (Ω)
Fig. 16- Typ. Switching Time vs. RG
TJ = 175°C; L=1mH; VCE= 400V
ICE= 10A; VGE= 15V
20
16
12
8
4
0
0
25 50 75 100 125
RG (Ω)
Fig. 18 - Typical Diode IRR vs. RG
TJ = 175°C; IF = 10A
5
5 Page 
Note: For the most current drawings please refer to the IR website at:
http://www.irf.com/package/
11 Page | ||
| Páginas | Total 11 Páginas | |
| PDF Descargar | [ Datasheet IRGB4064DPbF.PDF ] | |
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