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IRGB4045DPbF PDF Data sheet ( 特性 )

部品番号 IRGB4045DPbF
部品説明 INSULATED GATE BIPOLAR TRANSISTOR
メーカ International Rectifier
ロゴ International Rectifier ロゴ 



Total 10 pages
		

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IRGB4045DPbF Datasheet, IRGB4045DPbF PDF,ピン配置, 機能
INSULATED GATE BIPOLAR TRANSISTOR WITH
ULTRAFAST SOFT RECOVERY DIODE
Features
Low VCE (on) Trench IGBT Technology
Low Switching Losses
Maximum Junction temperature 175 °C
5µs SCSOA
Square RBSOA
100% of the parts tested for ILM
Positive VCE (on) Temperature Coefficient.
Ultra Fast Soft Recovery Co-pak Diode
Tighter Distribution of Parameters
Lead-Free Package
Benefits
High Efficiency in a Wide Range of Applications
Suitable for a Wide Range of Switching Frequencies due
to Low VCE (ON) and Low Switching Losses
Rugged Transient Performance for Increased Reliability
Excellent Current Sharing in Parallel Operation
Low EMI
PD - 97269A
IRGB4045DPbF
C
G
E
n-channel
C
VCES = 600V
IC = 6.0A, TC = 100°C
tsc > 5µs, Tjmax = 175°C
VCE(on) typ. = 1.7V
G
Gate
E
C
G
TO-220AB
C
Collector
E
Emitter
Absolute Maximum Ratings
Parameter
VCES
IC@ TC = 25°C
IC@ TC = 100°C
ICM
ILM
IF@TC=25°C
IF@TC=100°C
IFM
VGE
Collector-to-Emitter Breakdown Voltage
Continuous Collector Current
Continuous Collector Current
cPulsed Collector Current, VGE = 15V
Clamped Inductive Load Current, VGE = 20V
Diode Continuous Forward Current
Diode Continuous Forward Current
dDiode Maximum Forward Current
Continuous Gate-to-Emitter Voltage
Transient Gate-to-Emitter Voltage
PD @ TC =25°
PD @ TC =100°
TJ
TSTG
Maximum Power Dissipation
Maximum Power Dissipation
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
Thermal Resistance
RθJC
RθJC
RθCS
RθJA
Parameter
eJunction-to-Case - IGBT
eJunction-to-Case - Diode
Case-to-Sink, flat, greased surface
eJunction-to-Ambient, typical socket mount
1
Max.
600
12
6.0
18
24
8.0
4.0
24
± 20
± 30
77
39
-55 to + 175
Units
V
A
V
W
°C
300 (0.063 in. (1.6mm) from case)
Min.
Typ.
0.5
Max.
1.94
6.30
62
Units
°C/W
www.irf.com
01/28/2010

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