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IRG8P60N120KD-EPbF PDF Data sheet ( 特性 )

部品番号 IRG8P60N120KD-EPbF
部品説明 INSULATED GATE BIPOLAR TRANSISTOR
メーカ International Rectifier
ロゴ International Rectifier ロゴ 



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IRG8P60N120KD-EPbF Datasheet, IRG8P60N120KD-EPbF PDF,ピン配置, 機能
 
VCES = 1200V
IC = 60A, TC =100°C
IRG8P60N120KDPbF
IRG8P60N120KD-EPbF
Insulated Gate Bipolar Transistor with Ultrafast Soft Recovery Diode
  C 
tSC 10µs, TJ(max) = 150°C
VCE(ON) typ. = 1.7V @ IC = 40A
Applications
• Industrial Motor Drive
• UPS
• Solar Inverters
• Welding
G
E
n-channel
CE
G
E
GC
IRG8P60N120KDPbF  IRG8P60N120KDEPbF 
TO247AC 
TO247AD 
G
Gate
C
Collector
E
Emitter
Features
Benchmark Low VCE(ON)
10μs Short Circuit SOA
Positive VCE(ON) Temperature Coefficient
Square RBSOA and high ILM- rating
Lead-Free, RoHS compliant
Benefits 
High Efficiency in a Motor Drive Applications
Increases margin for short circuit protection scheme
Excellent Current Sharing in Parallel Operation
Rugged Transient Performance
Environmentally friendly
Base part number
IRG8P60N120KDPbF
IRG8P60N120KD-EPbF
Package Type
TO-247AC
TO-247AD
Standard Pack
Form
Quantity
Tube
25
Tube
25
Orderable Part Number
IRG8P60N120KDPbF
IRG8P60N120KD-EPbF
Absolute Maximum Ratings
Parameter
VCES
IC @ TC = 25°C
IC @ TC = 100°C
ICM
Collector-to-Emitter Voltage
Continuous Collector Current (Silicon Limited)
Continuous Collector Current
Pulse Collector Current (see fig. 2)
ILM
IF @ TC = 25°C
IF @ TC = 100°C
IFM
VGE
PD @ TC = 25°C
PD @ TC = 100°C
TJ
TSTG
Clamped Inductive Load Current (see fig. 3)
Diode Continuous Forward Current
Diode Continuous Forward Current
Diode Maximum Forward Current
Continuous Gate-to-Emitter Voltage
Maximum Power Dissipation
Maximum Power Dissipation
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 sec.
Mounting Torque, 6-32 or M3 Screw
Max.
1200
100
60
120
160
50
30
160
±30
420
170
-40 to +150
300 (0.063 in. (1.6mm) from case)
10 lbf·in (1.1 N·m)
Thermal Resistance
Parameter
RJC (IGBT)
RJC (Diode)
RCS
RJA
Thermal Resistance Junction-to-Case (IGBT)
Thermal Resistance Junction-to-Case (Diode)
Thermal Resistance, Case-to-Sink (flat, greased surface)
Thermal Resistance, Junction-to-Ambient (typical socket mount)
Min.
–––
–––
–––
–––
Typ.
–––
–––
0.24
40
Max.
0.3
0.8
–––
–––
Units
V
A 
V
W
C
Units
°C/W
1 www.irf.com © 2014 International Rectifier
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October 30, 2014

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