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IRG8P50N120KDPbFのメーカーはInternational Rectifierです、この部品の機能は「INSULATED GATE BIPOLAR TRANSISTOR」です。 |
部品番号 | IRG8P50N120KDPbF |
| |
部品説明 | INSULATED GATE BIPOLAR TRANSISTOR | ||
メーカ | International Rectifier | ||
ロゴ | |||
このページの下部にプレビューとIRG8P50N120KDPbFダウンロード(pdfファイル)リンクがあります。 Total 11 pages
VCES = 1200V
IC = 50A, TC =100°C
IRG8P50N120KDPbF
IRG8P50N120KD-EPbF
Insulated Gate Bipolar Transistor with Ultrafast Soft Recovery Diode
C
tSC 10µs, TJ(max) = 150°C
VCE(ON) typ. = 1.7V @ IC = 35A
Applications
• Industrial Motor Drive
• UPS
• Solar Inverters
• Welding
G
E
n-channel
GC E
GC E
IRG8P50N120KDPbF IRG8P50N120KD‐EPbF
TO‐247AC
TO‐247AD
G
Gate
C
Collector
E
Emitter
Features
Benchmark Low VCE(ON)
10μs Short Circuit SOA
Positive VCE(ON) Temperature Coefficient
Square RBSOA and high ILM- rating
Lead-Free, RoHS compliant
Benefits
High Efficiency in a Motor Drive Applications
Increases margin for short circuit protection scheme
Excellent Current Sharing in Parallel Operation
Rugged Transient Performance
Environmentally friendly
Base part number
IRG8P50N120KDPbF
IRG8P50N120KD-EPbF
Package Type
TO-247AC
TO-247AD
Standard Pack
Form
Quantity
Tube
25
Tube
25
Orderable Part Number
IRG8P50N120KDPbF
IRG8P50N120KD-EPbF
Absolute Maximum Ratings
Parameter
VCES
IC @ TC = 25°C
IC @ TC = 100°C
ICM
ILM
IF @ TC = 25°C
IF @ TC = 100°C
IFM
VGE
PD @ TC = 25°C
PD @ TC = 100°C
TJ
TSTG
Collector-to-Emitter Voltage
Continuous Collector Current
Continuous Collector Current
Pulse Collector Current (see fig. 2)
Clamped Inductive Load Current (see fig. 3)
Diode Continuous Forward Current
Diode Continuous Forward Current
Diode Maximum Forward Current
Continuous Gate-to-Emitter Voltage
Maximum Power Dissipation
Maximum Power Dissipation
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 sec.
Mounting Torque, 6-32 or M3 Screw
Max.
1200
80
50
105
140
45
25
140
±30
350
140
-40 to +150
300 (0.063 in. (1.6mm) from case)
10 lbf·in (1.1 N·m)
Thermal Resistance
Parameter
RJC (IGBT)
RJC (Diode)
RCS
RJA
Thermal Resistance Junction-to-Case-(each IGBT)
Thermal Resistance Junction-to-Case-(each Diode)
Thermal Resistance, Case-to-Sink (flat, greased surface)
Thermal Resistance, Junction-to-Ambient (typical socket mount)
Min.
–––
–––
–––
–––
Typ.
–––
–––
0.24
40
Max.
0.36
0.83
–––
–––
Units
V
A
V
W
C
Units
°C/W
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October 30, 2014
1 Page 80
70
60
50
40
30 Square Wave:
VCC
20 I
10
Diode as specified
0
0.1
1000
IRG8P50N120KDPbF/IRG8P50N120KD-EPbF
For both:
Duty cycle : 50%
Tj = 150°C
Tcase = 100°C
Gate drive as specified
Power Dissipation = 125W
1 10
f , Frequency ( kHz )
Fig. 1 - Typical Load Current vs. Frequency
(Load Current = IRMS of fundamental)
1000
100
100
10µsec
10
100µsec
1
Tc = 25°C
Tj = 150°C
Single Pulse
0.1
1
10
100
VCE (V)
1msec
DC
1000 10000
Fig. 2 - Forward SOA
TC = 25°C; TJ ≤ 150°C; VGE = 15V
1000
100
10
1
10
1000
100 1000
VCE (V)
Fig. 3 - Reverse Bias SOA
TJ = 150°C; VGE = 20V
10000
100 100
10
VGE = 18V
1.0
VGE = 15V
VGE = 12V
VGE = 10V
VGE = 8.0V
0.1
0 2 4 6 8 10
VCE (V)
Fig. 4 -Typ. IGBT Output Characteristics
TJ = 25°C; tp = 20µs
3 www.irf.com © 2014 International Rectifier
10
Tc = -40°C
1 Tc = 25°C
Tc = 150°C
0.1
0
246
VCE (V)
8
Fig. 5 - Typ. IGBT Saturation Voltage
VGE = 15V; tp = 20µs
Submit Datasheet Feedback
October 30, 2014
3Pages IRG8P50N120KDPbF/IRG8P50N120KD-EPbF
1
0.1
0.01
0.001
0.0001
1E-006
D = 0.50
0.20
0.10
0.05
0.02
0.01
SINGLE PULSE
( THERMAL RESPONSE )
J J
1 1
R1R1
Ci= iRi
Ci= iRi
R2R2
2 2
R3R3
3 3
CC
Ri (°C/W)
0.11421
0.15533
0.09137
i (sec)
0.000475
0.003895
0.018752
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthjc + Tc
1E-005
0.0001
0.001
0.01
t1 , Rectangular Pulse Duration (sec)
0.1
1
Fig. 15 - Maximum Transient Thermal Impedance, Junction-to-Case (IGBT)
1
D = 0.50
0.1
0.01
0.20
0.10
0.05
0.02
0.01
Ri (°C/W)
R 1R 1
R2R2
R 3R 3
R4R4
0.02298
J J
1 1
CC 0.13483
2 2
3 3
4 4
0.34628
Ci= iRi
Ci= iRi
0.32636
i (sec)
0.000019
0.000197
0.003798
0.051102
0.001
1E-006
SINGLE PULSE
( THERMAL RESPONSE )
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthjc + Tc
1E-005
0.0001
0.001
0.01
t1 , Rectangular Pulse Duration (sec)
0.1
1
Fig. 16 - Maximum Transient Thermal Impedance, Junction-to-Case (DIODE)
6 www.irf.com © 2014 International Rectifier
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October 30, 2014
6 Page | |||
ページ | 合計 : 11 ページ | ||
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部品番号 | 部品説明 | メーカ |
IRG8P50N120KDPbF | INSULATED GATE BIPOLAR TRANSISTOR | International Rectifier |