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PDF IRG8P25N120KD-EPbF Data sheet ( Hoja de datos )

Número de pieza IRG8P25N120KD-EPbF
Descripción INSULATED GATE BIPOLAR TRANSISTOR
Fabricantes International Rectifier　
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No Preview Available ! IRG8P25N120KD-EPbF Hoja de datos, Descripción, Manual

  IRG8P25N120KDPbF
IRG8P25N120KD-EPbF
VCES = 1200V
IC = 25A, TC =100°C
Insulated Gate Bipolar Transistor with Ultrafast Soft Recovery Diode
 C
 
tSC 10µs, TJ(max) = 150°C
VCE(ON) typ. = 1.7V @ IC = 15A
Applications
• Industrial Motor Drive
• UPS
• Solar Inverters
• Welding
G
E
n-channel
G CE
G CE
IRG8P25N120KDPbF  IRG8P25N120KD‐EPbF 
TO‐247AC 
TO‐247AD 
G
Gate
C
Collector
E
Emitter
Features
Benchmark Low VCE(ON)
10μs Short Circuit SOA
Positive VCE(ON) Temperature Coefficient
Square RBSOA and high ILM- rating
Lead-Free, RoHS compliant
Benefits 
High Efficiency in a Motor Drive Applications
Increases margin for short circuit protection scheme
Excellent Current Sharing in Parallel Operation
Rugged Transient Performance
Environmentally friendly
Base part number
IRG8P25N120KDPbF
IRG8P25N120KD-EPbF
Package Type
TO-247AC
TO-247AD
Standard Pack
Form
Quantity
Tube
25
Tube
25
Orderable Part Number
IRG8P25N120KDPbF
IRG8P25N120KD-EPbF
Absolute Maximum Ratings
Parameter
VCES
IC @ TC = 25°C
IC @ TC = 100°C
ICM
ILM
IF @ TC = 25°C
IF @ TC = 100°C
IFM
VGE
PD @ TC = 25°C
PD @ TC = 100°C
TJ
TSTG
Collector-to-Emitter Voltage
Continuous Collector Current (Silicon Limited)
Continuous Collector Current
Pulse Collector Current (see fig. 2)
Clamped Inductive Load Current (see fig. 3)
Diode Continuous Forward Current
Diode Continuous Forward Current
Diode Maximum Forward Current
Continuous Gate-to-Emitter Voltage
Maximum Power Dissipation
Maximum Power Dissipation
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 sec.
Mounting Torque, 6-32 or M3 Screw
Max.
1200
40
25
45
60
25
12
60
±30
180
70
-40 to +150
300 (0.063 in. (1.6mm) from case)
10 lbf·in (1.1 N·m)
Thermal Resistance
Parameter
RJC (IGBT)
RJC (Diode)
RCS
RJA
Thermal Resistance Junction-to-Case-(each IGBT)
Thermal Resistance Junction-to-Case-(each Diode)
Thermal Resistance, Case-to-Sink (flat, greased surface)
Thermal Resistance, Junction-to-Ambient (typical socket mount)
Min.
–––
–––
–––
–––
Typ.
–––
–––
0.24
40
Max.
0.7
1.5
–––
–––
Units
V
A
V
W
C
Units
°C/W
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Submit Datasheet Feedback
November 3, 2014

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IRG8P25N120KD-EPbF pdf
  IRG8P25N120KDPbF/IRG8P25N120KD-EPbF
34
VCC = 600V
32 Tj = 150°C
VGE = 15V
30 IF = 15A
28
RG = 10
26 RG = 
24 RG = 30
22 RG = 50
20
700 800 900 1000 1100 1200
diF /dt (A/µs)
1200
1000
800
RG = 10
RG = 20
RG = 30
RG = 50
600
400
200
0
0 10 20
IF (A)
30
Fig. 12 - Typ. IRR vs. di/dt
Fig. 13 - Typ. Diode ERR vs. IF
TJ = 150°C
100
-40°C
25°C
150°C
10
1
0.1
0.0 1.0 2.0 3.0 4.0 5.0 6.0
VF (V)
Fig. 14 - Typ. Diode Forward
Voltage Drop Characteristics
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November 3, 2014

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IRG8P25N120KD-EPbF arduino
  IRG8P25N120KDPbF/IRG8P25N120KD-EPbF
Qualification Information†
Qualification Level  
Moisture Sensitivity Level
RoHS Compliant
TO-247AC
TO-247AD
Industrial†
(per JEDEC JESD47F) ††
N/A
N/A
Yes
† Qualification standards can be found at International Rectifier’s web site: http://www.irf.com/product-info/reliability/
†† Applicable version of JEDEC standard at the time of product release.
11 www.irf.com
IR WORLD HEADQUARTERS: 101 N. Sepulveda Blvd., El Segundo, California 90245, USA
To contact International Rectifier, please visit http://www.irf.com/whoto-call/
© 2014 International Rectifier Submit Datasheet Feedback
November 3, 2014

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