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IRG8P25N120KDPbF PDF Data sheet ( 特性 )

部品番号 IRG8P25N120KDPbF
部品説明 INSULATED GATE BIPOLAR TRANSISTOR
メーカ International Rectifier
ロゴ International Rectifier ロゴ 



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IRG8P25N120KDPbF Datasheet, IRG8P25N120KDPbF PDF,ピン配置, 機能
  IRG8P25N120KDPbF
IRG8P25N120KD-EPbF
VCES = 1200V
IC = 25A, TC =100°C
Insulated Gate Bipolar Transistor with Ultrafast Soft Recovery Diode
 C
 
tSC 10µs, TJ(max) = 150°C
VCE(ON) typ. = 1.7V @ IC = 15A
Applications
• Industrial Motor Drive
• UPS
• Solar Inverters
• Welding
G
E
n-channel
G CE
G CE
IRG8P25N120KDPbF  IRG8P25N120KDEPbF 
TO247AC 
TO247AD 
G
Gate
C
Collector
E
Emitter
Features
Benchmark Low VCE(ON)
10μs Short Circuit SOA
Positive VCE(ON) Temperature Coefficient
Square RBSOA and high ILM- rating
Lead-Free, RoHS compliant
Benefits 
High Efficiency in a Motor Drive Applications
Increases margin for short circuit protection scheme
Excellent Current Sharing in Parallel Operation
Rugged Transient Performance
Environmentally friendly
Base part number
IRG8P25N120KDPbF
IRG8P25N120KD-EPbF
Package Type
TO-247AC
TO-247AD
Standard Pack
Form
Quantity
Tube
25
Tube
25
Orderable Part Number
IRG8P25N120KDPbF
IRG8P25N120KD-EPbF
Absolute Maximum Ratings
Parameter
VCES
IC @ TC = 25°C
IC @ TC = 100°C
ICM
ILM
IF @ TC = 25°C
IF @ TC = 100°C
IFM
VGE
PD @ TC = 25°C
PD @ TC = 100°C
TJ
TSTG
Collector-to-Emitter Voltage
Continuous Collector Current (Silicon Limited)
Continuous Collector Current
Pulse Collector Current (see fig. 2)
Clamped Inductive Load Current (see fig. 3)
Diode Continuous Forward Current
Diode Continuous Forward Current
Diode Maximum Forward Current
Continuous Gate-to-Emitter Voltage
Maximum Power Dissipation
Maximum Power Dissipation
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 sec.
Mounting Torque, 6-32 or M3 Screw
Max.
1200
40
25
45
60
25
12
60
±30
180
70
-40 to +150
300 (0.063 in. (1.6mm) from case)
10 lbf·in (1.1 N·m)
Thermal Resistance
Parameter
RJC (IGBT)
RJC (Diode)
RCS
RJA
Thermal Resistance Junction-to-Case-(each IGBT)
Thermal Resistance Junction-to-Case-(each Diode)
Thermal Resistance, Case-to-Sink (flat, greased surface)
Thermal Resistance, Junction-to-Ambient (typical socket mount)
Min.
–––
–––
–––
–––
Typ.
–––
–––
0.24
40
Max.
0.7
1.5
–––
–––
Units
V
A
V
W
C
Units
°C/W
1 www.irf.com © 2014 International Rectifier
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November 3, 2014

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