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IRG8P15N120KD-EPbF の電気的特性と機能

IRG8P15N120KD-EPbFのメーカーはInternational Rectifierです、この部品の機能は「INSULATED GATE BIPOLAR TRANSISTOR」です。


製品の詳細 ( Datasheet PDF )

部品番号 IRG8P15N120KD-EPbF
部品説明 INSULATED GATE BIPOLAR TRANSISTOR
メーカ International Rectifier
ロゴ International Rectifier ロゴ 




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IRG8P15N120KD-EPbF Datasheet, IRG8P15N120KD-EPbF PDF,ピン配置, 機能
  IRG8P15N120KDPbF
IRG8P15N120KD-EPbF
VCES = 1200V
IC = 15A, TC =100°C
Insulated Gate Bipolar Transistor with Ultrafast Soft Recovery Diode
  C 
tSC 10µs, TJ(max) = 150°C
VCE(ON) typ. = 1.7V @ IC = 10A
Applications
• Industrial Motor Drive
• UPS
• Solar Inverters
• Welding
Features
Benchmark Low VCE(ON)
10μs Short Circuit SOA
Positive VCE(ON) Temperature Coefficient
Square RBSOA and high ILM- rating
Lead-Free, RoHS compliant
G
E
n-channel
E
GC
E
GC
IRG8P15N120KDPbF  IRG8P15N120KDEPbF 
TO247AC 
TO247AD 
G
Gate
C
Collector
E
Emitter
Benefits 
High Efficiency in a Motor Drive Applications
Increases margin for short circuit protection scheme
Excellent Current Sharing in Parallel Operation
Rugged Transient Performance
Environmentally friendly
Base part number
IRG8P15N120KDPbF
IRG8P15N120KD-EPbF
Package Type
TO-247AC
TO-247AD
Standard Pack
Form
Quantity
Tube
25
Tube
25
Orderable Part Number
IRG8P15N120KDPbF
IRG8P15N120KD-EPbF
Absolute Maximum Ratings
Parameter
VCES
IC @ TC = 25°C
IC @ TC = 100°C
ICM
ILM
IF @ TC = 25°C
IF @ TC = 100°C
IFM
VGE
PD @ TC = 25°C
PD @ TC = 100°C
TJ
TSTG
Collector-to-Emitter Voltage
Continuous Collector Current (Silicon Limited)
Continuous Collector Current
Pulse Collector Current (see fig. 2)
Clamped Inductive Load Current (see fig. 3)
Diode Continuous Forward Current
Diode Continuous Forward Current
Diode Maximum Forward Current
Continuous Gate-to-Emitter Voltage
Maximum Power Dissipation
Maximum Power Dissipation
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 sec.
Mounting Torque, 6-32 or M3 Screw
Max.
1200
30
15
30
40
20
11
40
±30
125
50
-40 to +150
300 (0.063 in. (1.6mm) from case)
10 lbf·in (1.1 N·m)
Thermal Resistance
Parameter
RJC (IGBT)
RJC (Diode)
RCS
RJA
Thermal Resistance Junction-to-Case-(each IGBT)
Thermal Resistance Junction-to-Case-(each Diode)
Thermal Resistance, Case-to-Sink (flat, greased surface)
Thermal Resistance, Junction-to-Ambient (typical socket mount)
Min.
–––
–––
–––
–––
Typ.
–––
–––
0.24
40
Max.
1.0
1.7
–––
–––
Units
V
A
V
W
C
Units
°C/W
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November 4, 2014

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IRG8P15N120KD-EPbF pdf, ピン配列
 
30
25
20
15
10
5
Square Wave:
VCC
I
Diode as specified
0
0.1
100
IRG8P15N120KDPbF/IRG8P15N120KD-EPbF
For both:
Duty cycle : 50%
Tj = 150°C
Tcase = 100°C
Gate drive as specified
Power Dissipation = 50W
1 10
f , Frequency ( kHz )
Fig. 1 - Typical Load Current vs. Frequency
(Load Current = IRMS of fundamental)
100
100
10 10µsec
1 100µsec
1msec
0.1
Tc = 25°C
Tj = 150°C
Single Pulse
DC
0.01
1
10 100 1000
VCE (V)
Fig. 2 - Forward SOA
TC = 25°C; TJ 150°C; VGE = 15V
100
10000
10
1
10
100
100
1000
10000
VCE (V)
Fig. 3 - Reverse Bias SOA
TJ = 150°C; VGE = 20V
10
1.0 VGE = 18V
VGE = 15V
VGE = 12V
VGE = 10V
VGE = 8.0V
0.1
0 2 4 6 8 10
VCE (V)
Fig. 4 - Typ. IGBT Output Characteristics
TJ = 25°C; tp = 20µs
3 www.irf.com © 2014 International Rectifier
10
Tc = -40°C
1
Tc = 25°C
Tc = 150°C
0.1
0 2 4 6 8 10
VCE (V)
Fig. 5 - Typ. IGBT Saturation Voltage
VGE = 15V; tp = 20µs
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November 4, 2014


3Pages


IRG8P15N120KD-EPbF 電子部品, 半導体
  IRG8P15N120KDPbF/IRG8P15N120KD-EPbF
10
1
0.1
0.01
0.001
0.0001
1E-006
D = 0.50
0.20
0.10
0.05
0.02
0.01
SINGLE PULSE
( THERMAL RESPONSE )
Ri (°C/W)
R 1R 1
R2R2
R 3R 3
R4R4
0.05998
J J
1 1
CC 0.30139
2 2
3 3
4 4
0.38387
Ci= iRi
Ci= iRi
0.25341
i (sec)
0.000058
0.000138
0.002914
0.020999
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthjc + Tc
1E-005
0.0001
0.001
0.01
t1 , Rectangular Pulse Duration (sec)
0.1
1
Fig. 15 - Maximum Transient Thermal Impedance, Junction-to-Case (IGBT)
10
1 D = 0.50
0.1
0.01
0.20
0.10
0.05
0.02
0.01
Ri (°C/W)
R 1R 1
R2R2
R 3R 3
R4R4
0.04595
J J
1 1
CC 0.57951
2 2
3 3
4 4
0.67140
Ci= iRi
Ci= iRi
0.40462
i (sec)
0.000029
0.000372
0.004176
0.047311
0.001
1E-006
SINGLE PULSE
( THERMAL RESPONSE )
1E-005
0.0001
0.001
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthjc + Tc
0.01 0.1
1
t1 , Rectangular Pulse Duration (sec)
Fig. 16 - Maximum Transient Thermal Impedance, Junction-to-Case (DIODE)
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November 4, 2014

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部品番号部品説明メーカ
IRG8P15N120KD-EPbF

INSULATED GATE BIPOLAR TRANSISTOR

International Rectifier
International Rectifier


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