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IRG8B08N120KDPbF PDF Datasheet ( 特性, スペック, ピン接続図 )

部品番号 IRG8B08N120KDPbF
部品説明 INSULATED GATE BIPOLAR TRANSISTOR
メーカ International Rectifier
ロゴ International Rectifier ロゴ 



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IRG8B08N120KDPbF Datasheet, IRG8B08N120KDPbF PDF,ピン配置, 機能
  IRG8B08N120KDPbF
IRG8P08N120KDPbF
IRG8P08N120KD-EPbF
VCES = 1200V
IC = 8A, TC =100°C
Insulated Gate Bipolar Transistor with Ultrafast Soft Recovery Diode
 C
tSC 10µs, TJ(max) = 150°C
VCE(ON) typ. = 1.7V @ IC = 5A
Applications
• Industrial Motor Drive
• UPS
• Solar Inverters
• Welding
Features
Benchmark Low VCE(ON)
10μs Short Circuit SOA
Positive VCE(ON) Temperature Coefficient
Square RBSOA and high ILM- rating
Lead-Free, RoHS compliant
G
E
n-channel
GCE
TO-220AB
IRG8B08N120KDPbF
GCE
TO-247AC
IRG8P08N120KDPbF
GC E
TO-247AD
IRG8P08N120KD-EPbF
G
Gate
C
Collector
E
Emitter
Benefits 
High Efficiency in a Motor Drive Applications
Increases margin for short circuit protection scheme
Excellent Current Sharing in Parallel Operation
Rugged Transient Performance
Environmentally friendly
Base part number
IRG8P08N120KDPbF
IRG8P08N120KD-EPbF
IRG8B08N120KDPbF
Package Type
TO-247AC
TO-247AD
TO-220AB
Standard Pack
Form
Quantity
Tube
25
Tube
25
Tube
50
Orderable Part Number
IRG8P08N120KDPbF
IRG8P08N120KD-EPbF
IRG8B08N120KDPbF
Absolute Maximum Ratings
Parameter
Max.
VCES
IC @ TC = 25°C
IC @ TC = 100°C
ICM
ILM
IF @ TC = 25°C
IF @ TC = 100°C
VGE
IFM
PD @ TC = 25°C
PD @ TC = 100°C
TJ
TSTG
Collector-to-Emitter Voltage
Continuous Collector Current (Silicon Limited)
Continuous Collector Current
Pulse Collector Current (see fig. 2)
Clamped Inductive Load Current (see fig. 3)
Diode Continuous Forward Current
Diode Continuous Forward Current
Continuous Gate-to-Emitter Voltage
Diode Maximum Forward Current
Maximum Power Dissipation
Maximum Power Dissipation
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 sec.
1200
15
8
15
20
11
6
±30
20
89
36
-40 to +150
300 (0.063 in. (1.6mm) from case)
Mounting Torque, 6-32 or M3 Screw
10 lbf·in (1.1 N·m)
 
Thermal Resistance
Parameter
Typ. Max.
RJC (IGBT) Thermal Resistance Junction-to-Case-(each IGBT) TO-220AB
RJC (Diode) Thermal Resistance Junction-to-Case-(each Diode) TO-220AB
RJC (IGBT) Thermal Resistance Junction-to-Case-(each IGBT) TO-247
RJC (Diode) Thermal Resistance Junction-to-Case-(each Diode) TO-247
RCS
Thermal Resistance, Case-to-Sink (flat, greased surface)TO-220AB
RJA Thermal Resistance, Junction-to-Ambient (typical socket mount)TO-220AB
RCS
Thermal Resistance, Case-to-Sink (flat, greased surface)TO-247
RJA Thermal Resistance, Junction-to-Ambient (typical socket mount)TO-247
––– 1.3
––– 2.6
––– 1.4
––– 2.6
0.50 –––
––– 62
0.24 –––
––– 40
Units
V
A
V
W
C 
Units
°C/W
1 www.irf.com © 2014 International Rectifier
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December 12, 2014

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