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IRG7PSH73K10PbF PDF Data sheet ( 特性 )

部品番号 IRG7PSH73K10PbF
部品説明 INSULATED GATE BIPOLAR TRANSISTOR
メーカ International Rectifier
ロゴ International Rectifier ロゴ 



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IRG7PSH73K10PbF Datasheet, IRG7PSH73K10PbF PDF,ピン配置, 機能
INSULATED GATE BIPOLAR TRANSISTOR
Features
• Low VCE (ON) Trench IGBT Technology
• Low Switching Losses
• Maximum Junction Temperature 175 °C
• 10 μS short Circuit SOA
• Square RBSOA
• 100% of The Parts Tested for ILM
• Positive VCE (ON) Temperature Coefficient
• Tight Parameter Distribution
• Lead Free Package
Benefits
• High Efficiency in a Wide Range of Applications
• Suitable for a Wide Range of Switching Frequencies due to
Low VCE (ON) and Low Switching Losses
• Rugged Transient Performance for Increased Reliability
• Excellent Current Sharing in Parallel Operation
PD - 97406A
IRG7PSH73K10PbF
C
G
E
n-channel
VCES = 1200V
IC(Nominal) = 75A
tSC 10μs, TJ(max) =175°C
VCE(on) typ. = 2.0V
G
G ate
C
E
GC
Super-247
C
C ollector
E
E m itter
Absolute Maximum Ratings
Parameter
VCES
IC @ TC = 25°C
IC @ TC = 100°C
INOMINAL
ICM
ILM
VGE
PD @ TC = 25°C
PD @ TC = 100°C
TJ
TSTG
Collector-to-Emitter Voltage
Continuous Collector Current
Continuous Collector Current
Nominal Current
Pulse Collector Current, VGE=15V
dClamped Inductive Load Current, VGE=20V
Continuous Gate-to-Emitter Voltage
Maximum Power Dissipation
Maximum Power Dissipation
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 sec.
Mounting Torque, 6-32 or M3 Screw
Thermal Resistance
RθJC (IGBT)
RθCS
RθJA
Parameter
gThermal Resistance Junction-to-Case-(each IGBT)
gThermal Resistance, Case-to-Sink (flat, greased surface)
Thermal Resistance, Junction-to-Ambient (typical socket mount)
Max.
1200
220c
130
75
225
300
±30
1150
580
-55 to +175
300 (0.063 in. (1.6mm) from case)
10 lbf·in (1.1 N·m)
Min.
–––
–––
–––
Typ.
–––
0.24
40
Max.
0.13
–––
–––
Units
V
A
V
W
°C
Units
°C/W
1 www.irf.com
9/8/10

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