DataSheet.jp

IRG7PSH50UDPbF PDF Datasheet ( 特性, スペック, ピン接続図 )

部品番号 IRG7PSH50UDPbF
部品説明 INSULATED GATE BIPOLAR TRANSISTOR
メーカ International Rectifier
ロゴ International Rectifier ロゴ 



Total 10 pages
		

No Preview Available !

IRG7PSH50UDPbF Datasheet, IRG7PSH50UDPbF PDF,ピン配置, 機能
PD - 97548
IRG7PSH50UDPbF
INSULATED GATE BIPOLAR TRANSISTOR WITH
ULTRAFAST SOFT RECOVERY DIODE
Features
• Low VCE (ON) trench IGBT technology
• Low switching losses
C
• Square RBSOA
• 100% of the parts tested for ILM 
• Positive VCE (ON) temperature co-efficient
• Ultra fast soft recovery co-pak diode
G
• Tight parameter distribution
• Lead-Free
Benefits
E
n-channel
• High efficiency in a wide range of applications
• Suitable for a wide range of switching frequencies due to
low VCE (ON) and low switching losses
• Rugged transient performance for increased reliability
• Excellent current sharing in parallel operation
Applications
• U.P.S.
• Welding
• Solar Inverter
• Induction Heating
G
Gate
VCES = 1200V
I NOMINAL = 50A
TJ(max) = 150°C
VCE(on) typ. = 1.7V
C
E
GC
Super-247
C
Collector
E
Emitter
Absolute Maximum Ratings
Parameter
VCES
IC @ TC = 25°C
IC @ TC = 100°C
INOMINAL
ICM
ILM
IF @ TC = 25°C
IF @ TC = 100°C
IFM
VGE
PD @ TC = 25°C
PD @ TC = 100°C
TJ
TSTG
Collector-to-Emitter Voltage
Continuous Collector Current (Silicon Limited)
Continuous Collector Current (Silicon Limited)
Nominal Current
Pulse Collector Current, VGE = 15V
cClamped Inductive Load Current, VGE = 20V
Diode Continous Forward Current
Diode Continous Forward Current
dDiode Maximum Forward Current
Continuous Gate-to-Emitter Voltage
Maximum Power Dissipation
Maximum Power Dissipation
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 sec.
Mounting Torque, 6-32 or M3 Screw
Thermal Resistance
RθJC (IGBT)
RθJC (Diode)
RθCS
RθJA
Parameter
fThermal Resistance Junction-to-Case-(each IGBT)
fThermal Resistance Junction-to-Case-(each Diode)
Thermal Resistance, Case-to-Sink (flat, greased surface)
Thermal Resistance, Junction-to-Ambient (typical socket mount)
Max.
1200
116
70
50
150
200
116
70
200
±30
462
185
-55 to +150
300 (0.063 in. (1.6mm) from case)
10 lbf·in (1.1 N·m)
Min.
–––
–––
–––
–––
Typ.
–––
–––
0.24
40
Max.
0.27
0.37
–––
–––
Units
V
A
V
W
°C
Units
°C/W
1 www.irf.com
07/28/2010

1 Page





ページ 合計 : 10 ページ
PDF
ダウンロード
[ IRG7PSH50UDPbF.PDF ]

共有リンク

Link :

おすすめデータシート

部品番号部品説明メーカ
IRG7PSH50UDPbF

INSULATED GATE BIPOLAR TRANSISTOR

International Rectifier
International Rectifier

www.DataSheet.jp    |   2020   |  メール    |   最新    |   Sitemap