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IRLS3813PBF PDF Datasheet ( 特性, スペック, ピン接続図 )

部品番号 IRLS3813PBF
部品説明 POWER MOSFET
メーカ International Rectifier
ロゴ International Rectifier ロゴ 



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IRLS3813PBF Datasheet, IRLS3813PBF PDF,ピン配置, 機能
Application
 Brushed motor drive applications
 BLDC motor drive applications
 Battery powered circuits
 Half-bridge and full-bridge topologies
 Synchronous rectifier applications
 Resonant mode power supplies
 OR-ing and redundant power switches
 DC/DC and AC/DC converters
 DC/AC inverters
Benefits
Fully Characterized Capacitance and Avalanche SOA
Enhanced body diode dV/dt and dI/dt Capability
Lead-Free, RoHS Compliant
IRLS3813PbF
HEXFET® Power MOSFET
 D
VDSS
30V
RDS(on) typ.
1.60m
G max 1.95m
ID (Silicon Limited)
247A
S ID (Package Limited) 160A
D
G
Gate
S
G
D2Pak
IRLS3813PbF
D
Drain
S
Source
Base part number Package Type
IRLS3813PbF
D2-Pak
Standard Pack
Form
Quantity
Tube
50
Tape and Reel Left
800
Orderable Part Number
IRLS3813PbF
IRLS3813TRLPbF
Absolute Maximum Rating
Symbol
VDS
ID @ TC = 25°C
ID @ TC = 100°C
ID @ TC = 25°C
IDM
PD @TC = 25°C
VGS
TJ
Parameter
Drain-to-Source Voltage
Continuous Drain Current, VGS @ 10V (Silicon Limited)
Continuous Drain Current, VGS @ 10V (Silicon Limited)
Continuous Drain Current, VGS @ 10V (Package Limited)
Pulsed Drain Current 
Maximum Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Operating Junction and
TSTG
Storage Temperature Range
Soldering Temperature, for 10 seconds (1.6mm from case)
Avalanche Characteristics 
Symbol
Parameter
EAS (Thermally limited) Single Pulse Avalanche Energy 
IAR Avalanche Current
Thermal Resistance  
Symbol
Parameter
RJC
Junction-to-Case 
RJA Junction-to-Ambient (PCB Mount)
Max.
30
247
156
160
850
195
1.6
± 20
-55 to + 150  
300
Max.
177
148 
Typ.
–––
–––
Max.
0.64
40
Units
V
A
W
W/°C
V
°C  
Units
mJ
A
Units
°C/W  
1 www.irf.com © 2014 International Rectifier
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January 23, 2014

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