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IRLF120 の電気的特性と機能

IRLF120のメーカーはInternational Rectifierです、この部品の機能は「N-CHANNEL TRANSISTORS」です。


製品の詳細 ( Datasheet PDF )

部品番号 IRLF120
部品説明 N-CHANNEL TRANSISTORS
メーカ International Rectifier
ロゴ International Rectifier ロゴ 




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IRLF120 Datasheet, IRLF120 PDF,ピン配置, 機能
PD-90639C
REPETITIVE AVALANCHE AND dv/dt RATED
HEXFET®TRANSISTORS
THRU-HOLE (TO-39)
Product Summary
Part Number BVDSS
IRLF120
100V
RDS(on)
0.35
ID
5.3A
IRLF120
100V, N-CHANNEL
The Logic Level ‘L’ series of power MOSFETs are designed
to be operated with level logic gate-to-source voltage of 5V.
In addition to the well established characterstics of
HEXFETs®, they have the added advantage of providing
low drive requirements to interface power loads to logic level
IC’s and microprocessors.
TO-39
Fields of applications include: high speed power applications
such as switching regulators, switching converters, motor
drivers, solenoid and relay drivers and drivers for high power
bipolar switching transistors requiring high speed and low
gatedrive voltage.
The HEXFET technology is the key to International Rectifier’s
advanced line of logic level power MOSFET transistors. The
efficient geometry and unique processing of the HEXFET
achieve very low on-state resistance combined with high
transconductance and great device ruggedness.
Features:
n Repetitive Avalanche Ratings
n Dynamic dv/dt Rating
n Low Drive Requirements
n Execellent Temperature Stability
n Fast Switching Speeds
n Ease of Paralleling
n Hermetically Sealed
n Light Weight
.Absolute Maximum Ratings
Parameter
ID @ VGS = 5.0V, TC = 25°C Continuous Drain Current
ID @ VGS = 5.0V, TC = 100°C Continuous Drain Current
IDM Pulsed Drain Current À
PD @ TC = 25°C
Max. Power Dissipation
Linear Derating Factor
5.3
3.4
21
20
0.16
Units
A
W
W/°C
VGS
EAS
IAR
EAR
dv/dt
TJ
TSTG
Gate-to-Source Voltage
Single Pulse Avalanche Energy Á
Avalanche Current À
Repetitive Avalanche Energy À
Peak Diode Recovery dv/dt Â
Operating Junction
Storage Temperature Range
Lead Temperature
Weight
±10
120
5.3
2.0
5.5
-55 to 150
300 (0.063 in. (1.6mm) from case for 10s)
0.98 (typical)
V
mJ
A
mJ
V/ns
°C
g
For footnotes refer to the last page
www.irf.com
1
09/04/14

1 Page





IRLF120 pdf, ピン配列
IRLF120
Fig1. TypicalOutputCharacteristics
Fig2. TypicalOutputCharacteristics
Fig3. TypicalTransferCharacteristics
www.irf.com
Fig4. NormalizedOn-Resistance
Vs.Temperature
3


3Pages


IRLF120 電子部品, 半導体
IRLF120
15V
VDS
L
DRIVER
RG
2V0GVS
tp
D.U.T
IAS
0.01
+
-
VDD
A
Fig 12a. Unclamped Inductive Test Circuit
V(BR)DSS
tp
IAS
Fig 12b. Unclamped Inductive Waveforms
5.0 V
QGS
VG
QG
QGD
Charge
Fig 13a. Basic Gate Charge Waveform
Fig 12c. Maximum Avalanche Energy
Vs. Drain Current
Current Regulator
Same Type as D.U.T.
50K
12V .2µF
.3µF
D.U.T.
+
-VDS
VGS
3mA
IG ID
Current Sampling Resistors
Fig 13b. Gate Charge Test Circuit
6 www.irf.com

6 Page



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[ IRLF120 データシート.PDF ]


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共有リンク

Link :


部品番号部品説明メーカ
IRLF120

N-CHANNEL TRANSISTORS

International Rectifier
International Rectifier


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