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PDF IRHY67434CM Data sheet ( Hoja de datos )
| Número de pieza | IRHY67434CM | |
| Descripción | RADIATION HARDENED POWER MOSFET | |
| Fabricantes | International Rectifier | |
| Logotipo |  |
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PD-97805
RADIATION HARDENED
POWER MOSFET
THRU-HOLE (TO-257AA)
IRHY67434CM
550V, N-CHANNEL
TECHNOLOGY
Product Summary
Part Number Radiation Level
IRHY67434CM 100K Rads (Si)
IRHY63434CM 300K Rads (Si)
RDS(on)
3.0Ω
3.0Ω
ID
3.4A
3.4A
International Rectifier’s R6TM technology provides
superior power MOSFETs for space applications.
These devices have improved immunity to Single
Event Effect (SEE) and have been characterized for
useful performance with Linear Energy Transfer (LET)
up to 90MeV/(mg/cm2).
Their combination of very low RDS(on) and faster
switching times reduces power loss and increases
power density in today’s high speed switching
applications such as DC-DC converters and motor
controllers. These devices retain all of the well
established advantages of MOSFETs such as voltage
control, ease of paralleling and temperature stability
of electrical parameters.
TO-257AA
Features:
n Low RDS(on)
n Fast Switching
n Single Event Effect (SEE) Hardened
n Low Total Gate Charge
n Simple Drive Requirements
n Ease of Paralleling
n Hermetically Sealed
n Ceramic Eyelets
n Electrically Isolated
n Light Weight
Absolute Maximum Ratings
ID @ VGS = 12V, TC = 25°C
ID @ VGS = 12V, TC = 100°C
IDM
PD @ TC = 25°C
Parameter
Continuous Drain Current
Continuous Drain Current
Pulsed Drain Current À
Max. Power Dissipation
Linear Derating Factor
VGS
EAS
IAR
EAR
dv/dt
TJ
TSTG
Gate-to-Source Voltage
Single Pulse Avalanche Energy Á
Avalanche Current À
Repetitive Avalanche Energy À
Peak Diode Recovery dv/dt Â
Operating Junction
Storage Temperature Range
Lead Temperature
Weight
3.4
2.1
13.6
75
0.6
±20
97
3.4
7.5
8.1
-55 to 150
Pre-Irradiation
Units
A
W
W/°C
V
mJ
A
mJ
V/ns
°C
300 (0.063 in. /1.6 mm from case for 10s)
4.3 (Typical)
g
For footnotes refer to the last page
www.irf.com
1
01/11/13
1 page  
Pre-Irradiation
IRHY67434CM
2000
1600
1200
VGS = 0V, f = 1 MH10z0KHz
Ciss = C gs + Cgd, C ds SHORTED
Crss = Cgd
Coss = Cds + Cgd
Ciss
800
400 Coss
Crss
0
1 10
VDS, Drain-to-Source Voltage (V)
Fig 5. Typical Capacitance Vs.
Drain-to-Source Voltage
100
20
ID = 3.4A
16
12
VDS = 6480V
VDS = 300V
VDS = 120V
8
4
FOR TEST CIRCUIT
SEE FIGURE 13
0
0 4 8 12 16 20 24 28 32 36 40
QG, Total Gate Charge (nC)
Fig 6. Typical Gate Charge Vs.
Gate-to-Source Voltage
100
10
TJ = 150°C
1
TJ = 25°C
0.1
0.01
0.2
VGS = 0V
0.4 0.6 0.8 1.0
VSD , Source-to-Drain Voltage (V)
1.2
Fig 7. Typical Source-Drain Diode
Forward Voltage
www.irf.com
100
OPERATION IN THIS AREA
LIMITED BY R DS(on)
10
100µs
1
1ms
0.1
Tc = 25°C
Tj = 150°C
Single Pulse
0.01
10
10ms
100
VDS , Drain-to-Source Voltage (V)
1000
Fig 8. Maximum Safe Operating Area
5
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| PDF Descargar | [ Datasheet IRHY67434CM.PDF ] | |
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