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PDF IRHY597130CM Data sheet ( Hoja de datos )
| Número de pieza | IRHY597130CM | |
| Descripción | RADIATION HARDENED POWER MOSFET | |
| Fabricantes | International Rectifier | |
| Logotipo |  |
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PD-94343A
RADIATION HARDENED
POWER MOSFET
THRU-HOLE (TO-257AA)
Product Summary
IRHY597130CM
JANSR2N7547T3
100V, P-CHANNEL
REF: MIL-PRF-19500/712
5 TECHNOLOGY
Part Number Radiation Level RDS(on) ID QPL Part Number
IRHY597130CM 100K Rads (Si) 0.215Ω -12.5A JANSR2N7547T3
IRHY593130CM 300K Rads (Si) 0.215Ω -12.5A JANSF2N7547T3
International Rectifier’s R5TM technology provides
high performance power MOSFETs for space
applications. These devices have been characterized
for Single Event Effects (SEE) with useful performance
up to an LET of 80 (MeV/(mg/cm2)). The combination
of low RDS(on) and low gate charge reduces the power
losses in switching applications such as DC to DC
converters and motor control. These devices retain
all of the well established advantages of MOSFETs
such as voltage control, fast switching, ease of
paralleling and temperature stability of electrical
parameters.
T0-257AA
Features:
n Single Event Effect (SEE) Hardened
n Ultra Low RDS(on)
n Low Total Gate Charge
n Proton Tolerant
n Simple Drive Requirements
n Ease of Paralleling
n Hermetically Sealed
n Ceramic Package
n Light Weight
n ESD Rating: Class 1C per MIL-STD-750, Method
Absolute Maximum Ratings
Parameter
ID @ VGS = -12V, TC = 25°C Continuous Drain Current
ID @ VGS = -12V, TC = 100°C Continuous Drain Current
IDM Pulsed Drain Current À
PD @ TC = 25°C
Max. Power Dissipation
Linear Derating Factor
VGS
EAS
IAR
EAR
dv/dt
TJ
TSTG
Gate-to-Source Voltage
Single Pulse Avalanche Energy Á
Avalanche Current À
Repetitive Avalanche Energy À
Peak Diode Recovery dv/dt Â
Operating Junction
Storage Temperature Range
Lead Temperature
Weight
Pre-Irradiation
Units
-12.5
-8.0
A
-50
75 W
0.6 W/°C
±20 V
94 mJ
-12.5
A
7.5 mJ
-4.3 V/ns
-55 to 150
°C
300 (0.063in/1.6mm from case for 10s )
4.3 ( Typical )
g
For footnotes refer to the last page
www.irf.com
1
11/15/12
1 page  
Pre-Irradiation
IRHY597130CM, JANSR2N7547T3
2000
1600
1200
800
VGS = 0V, f = 1MHz
Ciss = Cgs + Cgd , Cds SHORTED
Crss = Cgd
Coss = Cds + Cgd
Ciss
Coss
400
0
1
Crss
10
-VDS , Drain-to-Source Voltage (V)
100
Fig 5. Typical Capacitance Vs.
Drain-to-Source Voltage
20 ID = -12.5A
16
VVVDDDSSS
=
=
=
-80V
-50V
-20V
12
8
4
FOR TEST CIRCUIT
0 SEE FIGURE 13
0 10 20 30 40
QG , Total Gate Charge (nC)
Fig 6. Typical Gate Charge Vs.
Gate-to-Source Voltage
100
10
TJ = 150° C
1
TJ = 25 ° C
0.1
1.0
VGS = 0 V
2.0 3.0 4.0 5.0
-VSD,Source-to-Drain Voltage (V)
6.0
Fig 7. Typical Source-Drain Diode
Forward Voltage
www.irf.com
100
OPERATION IN THIS AREA LIMITED BY RDS(on)
10 100µs
1ms
1
Tc = 25°C
Tj = 150°C
Single Pulse
0.1
1 10
10ms
DC
100
-VDS , Drain-to-Source Voltage (V)
1000
Fig 8. Maximum Safe Operating Area
5
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| Páginas | Total 8 Páginas | |
| PDF Descargar | [ Datasheet IRHY597130CM.PDF ] | |
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