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10N60KのメーカーはUnisonic Technologiesです、この部品の機能は「N-CHANNEL POWER MOSFET」です。 |
部品番号 | 10N60K |
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部品説明 | N-CHANNEL POWER MOSFET | ||
メーカ | Unisonic Technologies | ||
ロゴ | |||
このページの下部にプレビューと10N60Kダウンロード(pdfファイル)リンクがあります。 Total 6 pages
UNISONIC TECHNOLOGIES CO., LTD
10N60K
10A, 600V N-CHANNEL
POWER MOSFET
DESCRIPTION
The UTC 10N60K is an N-channel Power MOSFET using UTC’s
advanced technology to provide customers a minimum on-state
resistance and superior switching performance, etc.
The UTC 10N60K is generally applied in high efficient DC to DC
converters, PWM motor controls and bridge circuits, etc.
FEATURES
* RDS(ON)<1.2Ω @ VGS=10V
* Low Gate Charge (Typical 90nC)
* Low CRSS ( typical 18 pF)
* High Switching Speed
* Improved dv/dt capability
SYMBOL
Power MOSFET
ORDERING INFORMATION
Ordering Number
Lead Free
Halogen Free
Package
10N60KL-TF3-T
10N60KG-TF3-T
TO-220F
10N60KL-TF1-T
10N60KG-TF1-T
TO-220F1
10N60KL-TF2-T
10N60KG-TF2-T
TO-220F2
10N60KL-TF3T-T
10N60KG-TF3T-T
TO-220F3
Note: Pin Assignment: G: Gate D: Drain S: Source
Pin Assignment
123
GDS
GDS
GDS
GDS
Packing
Tube
Tube
Tube
Tube
MARKING INFORMATION
PACKAGE
TO-220F
TO-220F1
TO-220F2
TO-220F3
www.unisonic.com.tw
Copyright © 2014 Unisonic Technologies Co., Ltd
MARKING
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Power MOSFET
ELECTRICAL CHARACTERISTICS( TC=25°C, unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN TYP MAX UNIT
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
BVDSS VGS = 0V, ID = 250μA
600
V
Drain-Source Leakage Current
IDSS
VDS = 600V, VGS = 0V
VDS = 480V, VGS = 0V, TC=125°C
1 µA
10 µA
Gate-Source Leakage Current
Forward
Reverse
IGSS
VGS = 30 V, VDS = 0 V
VGS = -30 V, VDS = 0 V
100 nA
-100 nA
Breakdown Voltage Temperature Coefficient ∆BVDSS/∆TJ ID=250µA, Referenced to 25°C
0.7 V/°C
ON CHARACTERISTICS
Gate Threshold Voltage
Static Drain-Source On-State Resistance
VGS(TH)
RDS(ON)
VDS = VGS, ID = 250μA
VGS = 10V, ID = 5A
2.0 4.0 V
0.5 0.8 1.2 Ω
DYNAMIC CHARACTERISTICS
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
CISS
COSS
CRSS
VDS=25V, VGS=0V, f=1.0 MHz
1000 2040 pF
125 215 pF
18 24 pF
SWITCHING CHARACTERISTICS
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
tD(ON)
tR
tD(OFF)
tF
QG
QGS
QGD
VDD=300V, ID =10A, RG =25Ω
(Note 1, 2)
VDS=480V, ID=10A, VGS=10 V
(Note 1, 2)
50 70 ns
69 150 ns
230 260 ns
88 105 ns
90 120 nC
20 nC
22 nC
DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS
Drain-Source Diode Forward Voltage
VSD VGS = 0 V, IS =10A
Maximum Continuous Drain-Source Diode
Forward Current
IS
Maximum Pulsed Drain-Source Diode
Forward Current
ISM
1.4 V
10 A
38 A
Reverse Recovery Time
trr VGS = 0 V, IS = 10A,
Reverse Recovery Charge
QRR dIF / dt = 100 A/µs (Note 1)
Note: 1. Pulse Test: Pulse width ≤ 300μs, Duty cycle ≤ 2%
2. Essentially independent of operating temperature.
420 ns
4.2 µC
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
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TYPICAL CHARACTERISTICS
Power MOSFET
UTC assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or
other parameters) listed in products specifications of any and all UTC products described or contained
herein. UTC products are not designed for use in life support appliances, devices or systems where
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in
whole or in part is prohibited without the prior written consent of the copyright owner. The information
presented in this document does not form part of any quotation or contract, is believed to be accurate
and reliable and may be changed without notice.
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
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ページ | 合計 : 6 ページ | ||
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PDF ダウンロード | [ 10N60K データシート.PDF ] |
データシートを活用すると、その部品の主な機能と仕様を詳しく理解できます。 ピン構成、電気的特性、動作パラメータ、性能を確認してください。 |
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