IXFH26N60Q Datasheet PDF - IXYS
| Part Number | IXFH26N60Q | |
| Description | Power MOSFETs | |
| Manufacturers | IXYS | |
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HiPerFETTM
Power MOSFETs
Q-Class
N-Channel Enhancement Mode
Avalanche Rated, High dv/dt, Low Qg
IXFH 26N60Q
IXFT 26N60Q
VDSS
ID25
RDS(on)
= 600 V
= 26 A
= 0.25 Ω
trr ≤ 250 ns
Symbol
VDSS
VDGR
V
GS
VGSM
I
D25
IDM
IAR
EAR
EAS
dv/dt
P
D
TJ
T
JM
Tstg
T
L
Md
Weight
Symbol
VDSS
VGS(th)
IGSS
IDSS
R
DS(on)
Test Conditions
TJ = 25°C to 150°C
TJ = 25°C to 150°C; RGS = 1 MΩ
Continuous
Transient
TC = 25°C
TC = 25°C, pulse width limited by TJM
TC = 25°C
TC = 25°C
TC = 25°C
IS ≤ IDM, di/dt ≤ 100 A/µs, VDD ≤ VDSS,
TJ ≤ 150°C, RG = 2 Ω
TC = 25°C
1.6 mm (0.063 in) from case for 10 s
Maximum Ratings
600 V
600 V
±20 V
±30 V
26 A
104 A
26 A
45 mJ
1.5 J
5 V/ns
360
-55 ... +150
150
-55 ... +150
300
W
°C
°C
°C
°C
Mounting torque
TO-247
1.13/10 Nm/lb.in.
TO-247
TO-268
6g
4g
Test Conditions
Characteristic Values
(TJ = 25°C, unless otherwise specified)
min. typ. max.
VGS = 0 V, ID = 250µA
VDS = VGS, ID = 4 mA
VGS = ±20 VDC, VDS = 0
VDS = VDSS
VGS = 0 V
TJ = 25°C
TJ = 125°C
VGS = 10 V, ID = 0.5 ID25
Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 %
600
2.5
V
4.5 V
±200 nA
25 µA
1 mA
0.25 Ω
TO-247 AD (IXFH)
(TAB)
TO-268 (D3) ( IXFT)
G
S
(TAB)
G = Gate
S = Source
D = Drain
TAB = Drain
Features
l Low gate charge
l International standard packages
l Epoxy meet UL 94 V-0, flammability
classification
l Low RDS (on) HDMOSTM process
l Rugged polysilicon gate cell structure
l Avalanche energy and current rated
l Fast intrinsic Rectifier
Advantages
l Easy to mount
l Space savings
l High power density
© 2002 IXYS All rights reserved
98635D (6/02)
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Part DetailsOn this page, you can learn information such as the schematic, equivalent, pinout, replacement, circuit, and manual for IXFH26N60Q electronic component. |
| Information | Total 2 Pages | |
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