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IXYH30N120C3 PDF Datasheet ( 特性, スペック, ピン接続図 )

部品番号 IXYH30N120C3
部品説明 High-Speed IGBT
メーカ IXYS
ロゴ IXYS ロゴ 



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IXYH30N120C3 Datasheet, IXYH30N120C3 PDF,ピン配置, 機能
1200V XPTTM
GenX3TM IGBTs
High-Speed IGBT
for 20-50 kHz Switching
IXYP30N120C3
IXYH30N120C3
VCES = 1200V
IC110 = 30A
VCE(sat)  3.3V
tfi(typ) = 88ns
Symbol
VCES
VCGR
VGES
VGEM
IC25
IICCM110
IA
EAS
SSOA
(RBSOA)
PC
TJ
TJM
Tstg
TL
TSOLD
Md
Weight
Test Conditions
TJ = 25°C to 175°C
TJ = 25°C to 175°C, RGE = 1M
Continuous
Transient
TC = 25°C
TTCC
= 110°C
= 25°C, 1ms
TC = 25°C
TC = 25°C
VGE = 15V, TVJ = 150°C, RG = 10
Clamped Inductive Load
TC = 25°C
Maximum Lead Temperature for Soldering
1.6 mm (0.062in.) from Case for 10s
Mounting Torque
TO-220
TO-247
Maximum Ratings
1200
1200
V
V
±20 V
±30 V
75 A
30 A
145 A
20 A
400 mJ
ICM = 60
VCE VCES
500
A
W
-55 ... +175
175
-55 ... +175
°C
°C
°C
300 °C
260 °C
1.13/10 Nm/lb.in
3g
6g
Symbol
Test Conditions
(TJ = 25C, Unless Otherwise Specified)
BVCES
IC = 250A, VGE = 0V
VGE(th)
IC = 250A, VCE = VGE
ICES VCE = VCES, VGE = 0V
TJ = 150C
IGES VCE = 0V, VGE = 20V
VCE(sat)
IC = 30A, VGE = 15V, Note 1
TJ = 150C
Characteristic Values
Min. Typ. Max.
1200
V
3.0 5.0 V
25 A
750 μA
100 nA
3.3 V
3.7 V
TO-220 (IXYP)
GC E
Tab
TO-247 AD (IXYH)
G
CE
G = Gate
E = Emitter
Tab
C = Collector
Tab = Collector
Features
High Voltage Package
Optimized for Low Switching Losses
Square RBSOA
Positive Thermal Coefficient of
Vce(sat)
Avalanche Rated
International Standard Packages
Advantages
High Power Density
Low Gate Drive Requirement
Applications
High Frequency Power Inverters
UPS
Motor Drives
SMPS
PFC Circuits
Battery Chargers
Welding Machines
Lamp Ballasts
© 2013 IXYS CORPORATION, All Rights Reserved
DS100385D(9/13)

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High-Speed IGBT

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