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KF3N50FSのメーカーはKECです、この部品の機能は「N-CHANNEL MOS FIELD EFFECT TRANSISTOR」です。 |
部品番号 | KF3N50FS |
| |
部品説明 | N-CHANNEL MOS FIELD EFFECT TRANSISTOR | ||
メーカ | KEC | ||
ロゴ | |||
このページの下部にプレビューとKF3N50FSダウンロード(pdfファイル)リンクがあります。 Total 6 pages
SEMICONDUCTOR
TECHNICAL DATA
KF3N50FZ/FS
N CHANNEL MOS FIELD
EFFECT TRANSISTOR
General Description
This planar stripe MOSFET has better characteristics, such as fast
switching time, fast reverse recovery time, low on resistance, low gate
charge and excellent avalanche characteristics. It is mainly suitable for
electronic ballast and switching mode power supplies.
FEATURES
VDSS= 500V, ID= 3A
Drain-Source ON Resistance : RDS(ON)=2.5
Qg(typ) = 7.50nC
(Max) @VGS = 10V
trr(typ) = 120ns (KF3N50FS)
trr(typ) = 300ns (KF3N50FZ)
MAXIMUM RATING (Tc=25 )
CHARACTERISTIC
SYMBOL
Drain-Source Voltage
VDSS
Gate-Source Voltage
VGSS
@TC=25
Drain Current @TC=100
Pulsed (Note1)
Single Pulsed Avalanche Energy
(Note 2)
Repetitive Avalanche Energy
(Note 1)
Peak Diode Recovery dv/dt
(Note 3)
ID
IDP
EAS
EAR
dv/dt
Drain Power
Dissipation
Tc=25
Derate above 25
PD
Maximum Junction Temperature
Storage Temperature Range
Thermal Characteristics
Tj
Tstg
Thermal Resistance, Junction-to-Case RthJC
Thermal Resistance, Junction-to-
Ambient
RthJA
* : Drain Current limited by maximum junction temperature
PIN CONNECTION
(KF3N50FZ/FS)
D
RATING
500
30
3*
1.8*
9*
110
4
10
25
0.2
150
-55 150
5.0
62.5
UNIT
V
V
A
mJ
mJ
V/ns
W
W/
/W
/W
AC
E
LM
D
NN
123
R
H
DIM MILLIMETERS
A 10.16 +_ 0.2
B 15.87 +_ 0.2
C 2.54 +_ 0.2
D 0.8 +_ 0.1
E 3.18 +_ 0.1
F 3.3 +_ 0.1
G 12.57 +_ 0.2
H 0.5 +_ 0.1
J 13.0 +_ 0.5
K 3.23 +_ 0.1
L 1.47 MAX
M 1.47 MAX
N 2.54 +_ 0.2
O 6.68 +_ 0.2
Q 4.7 +_ 0.2
R 2.76 +_ 0.2
*Single Gauge Lead Frame
TO-220IS (1)
G
S
2014. 6. 29
Revision No : 1
1/6
1 Page KF3N50FZ/FS
Fig1. ID - VDS
101
VGS=10V
VGS=7V
100
VGS=5V
10-1
10-2
0.1
1 10
Drain - Source Voltage VDS (V)
100
1.2
VGS = 0V
IDS = 250
1.1
Fig3. BVDSS - Tj
1.0
0.9
0.8
-100
-50 0 50 100
Junction Temperature Tj ( C )
150
Fig5. IS - VSD
102
101
TC=100 C
25 C
100
10-1
0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8
Source - Drain Voltage VSD (V)
2014. 6. 29
Revision No : 1
VDS=30V
101
Fig2. ID - VGS
TC=100 C
25 C
100
10-1
2
468
Gate - Source Voltage VGS (V)
10
Fig4. RDS(ON) - ID
6
5
4
3 VGS=7V
2 VGS=10V
1
0
01 23 45 6
Drain Current ID (A)
Fig6. RDS(ON) - Tj
3.0
VGS =10V
2.5 IDS = 1.5A
2.0
1.5
1.0
0.5
0.0
-100 -50 0 50 100
Junction Temperature Tj ( C)
150
3/6
3Pages KF3N50FZ/FS
Fig15. Source - Drain Diode Reverse Recovery and dv /dt
IF
0.5 VDSS
10V
DUT
driver
VGS
VDS
ISD
(DUT)
IS
Body Diode Forword Current
di/dt
IRM
Body Diode Reverse Current
VDS
(DUT)
Body Diode Recovery dv/dt
VSD
VDD
Body Diode Forword Voltage drop
2014. 6. 29
Revision No : 1
6/6
6 Page | |||
ページ | 合計 : 6 ページ | ||
|
PDF ダウンロード | [ KF3N50FS データシート.PDF ] |
データシートを活用すると、その部品の主な機能と仕様を詳しく理解できます。 ピン構成、電気的特性、動作パラメータ、性能を確認してください。 |
部品番号 | 部品説明 | メーカ |
KF3N50FS | N-CHANNEL MOS FIELD EFFECT TRANSISTOR | KEC |
KF3N50FZ | N-CHANNEL MOS FIELD EFFECT TRANSISTOR | KEC |