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BF1102RのメーカーはPhilipsです、この部品の機能は「Dual N-channel dual gate MOS-FETs」です。 |
部品番号 | BF1102R |
| |
部品説明 | Dual N-channel dual gate MOS-FETs | ||
メーカ | Philips | ||
ロゴ | |||
このページの下部にプレビューとBF1102Rダウンロード(pdfファイル)リンクがあります。 Total 16 pages
DISCRETE SEMICONDUCTORS
DATA SHEET
book, halfpage
MBD128
BF1102; BF1102R
Dual N-channel dual gate
MOS-FETs
Product specification
Supersedes data of 1999 Jul 01
2000 Apr 11
1 Page Philips Semiconductors
Dual N-channel dual gate MOS-FETs
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
SYMBOL
PARAMETER
CONDITIONS
Per MOS-FET unless otherwise specified
VDS drain-source voltage
ID drain current (DC)
IG1 gate 1 current
IG2 gate 2 current
Ptot total power dissipation
Tstg storage temperature
Tj operating junction temperature
Ts ≤ 102 °C
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth j-s
thermal resistance from junction to soldering point
Product specification
BF1102; BF1102R
MIN.
MAX.
UNIT
−7V
− 40 mA
− ±10 mA
− ±10 mA
− 200 mW
−65
+150
°C
− 150 °C
VALUE
240
UNIT
K/W
handboPot2ko,5th0alfpage
(mW)
200
150
100
50
0
0 50
MGS359
100 150 200
Ts (°C)
Fig.2 Power derating curve.
2000 Apr 11
3
3Pages Philips Semiconductors
Dual N-channel dual gate MOS-FETs
Product specification
BF1102; BF1102R
25
handbooIkD, halfpage
(mA)
20
MGS364
15
10
5
0
0 20 40 IG1 (µA) 60
VDS = 5 V; VG2-S = 4 V; Tj = 25 °C.
Fig.7 Drain current as a function of gate 1 current;
typical values.
handbook,1h5alfpage
ID
(mA)
10
MGS365
5
0
012345
VGG (V)
VDS = 5 V; VG2-S = 4 V; Tj = 25 °C.
RG1 = 120 kΩ (connected to VGG); see Fig.20.
Fig.8 Drain current as a function of gate 1 supply
voltage (= VGG); typical values.
handbook,3h0alfpage
ID
(mA)
RG1 = 47 kΩ
20
10
MGS366
68 kΩ
82 kΩ
100 kΩ
120 kΩ
150 kΩ
180 kΩ
220 kΩ
0
0 2 4 6 8 10
VGG = VDS (V)
VG2-S = 4 V; Tj = 25 °C.
RG1 connected to VGG; see Fig.20.
Fig.9 Drain current as a function of gate 1 (= VGG)
and drain supply voltage; typical values.
20
handbooIkD, halfpage
(mA)
16
12
MGS367
VG1-S = 5 V
4.5 V
4V
3.5 V
3V
8
4
0
0 2 4 VG2-S (V) 6
VDS = 5 V; Tj = 25 °C.
RG1 = 120 kΩ (connected to VGG); see Fig.20.
Fig.10 Drain current as a function of gate 2
voltage; typical values.
2000 Apr 11
6
6 Page | |||
ページ | 合計 : 16 ページ | ||
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部品番号 | 部品説明 | メーカ |
BF1102 | Dual N-channel dual gate MOS-FET | NXP Semiconductors |
BF1102R | Dual N-channel dual gate MOS-FETs | Philips |