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PDF IKW50N65WR5 Data sheet ( Hoja de datos )
| Número de pieza | IKW50N65WR5 | |
| Descripción | Reverse conducting IGBT | |
| Fabricantes | Infineon | |
| Logotipo |  |
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ReverseConductingSeries
ReverseconductingIGBTwithmonolithicbodydiode
IKW50N65WR5
Datasheet
InductrialPowerControl
1 page  
ReverseConductingSeries
ElectricalCharacteristic,atTvj=25°C,unlessotherwisespecified
Parameter
Symbol Conditions
StaticCharacteristic
Collector-emitter breakdown voltage V(BR)CES
Collector-emitter saturation voltage VCEsat
Diode forward voltage
VF
Gate-emitter threshold voltage
VGE(th)
Zero gate voltage collector current ICES
Gate-emitter leakage current
Transconductance
Integrated gate resistor
IGES
gfs
rG
VGE=0V,IC=0.50mA
VGE=15.0V,IC=50.0A
Tvj=25°C
Tvj=175°C
VGE=0V,IF=25.0A
Tvj=25°C
Tvj=175°C
IC=0.50mA,VCE=VGE
VCE=650V,VGE=0V
Tvj=25°C
Tvj=175°C
VCE=0V,VGE=20V
VCE=20V,IC=50.0A
IKW50N65WR5
min.
Value
typ.
max. Unit
650 -
-V
- 1.40 1.80 V
- 1.65 -
- 1.40 1.90 V
- 1.50 -
3.2 4.0 4.8 V
- - 40.0 µA
---
- - 100 nA
- 65.0 - S
none
Ω
ElectricalCharacteristic,atTvj=25°C,unlessotherwisespecified
Parameter
DynamicCharacteristic
Input capacitance
Output capacitance
Reverse transfer capacitance
Gate charge
Internal emitter inductance
measured 5mm (0.197 in.) from
case
Symbol Conditions
Cies
Coes VCE=25V,VGE=0V,f=1MHz
Cres
QG
VCC=520V,IC=50.0A,
VGE=15V
LE
Value
Unit
min. typ. max.
- 6140 -
- 55 - pF
- 23 -
- 230.0 - nC
- 13.0 - nH
SwitchingCharacteristic,InductiveLoad
Parameter
Symbol Conditions
IGBTCharacteristic,atTvj=25°C
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Turn-on energy
Turn-off energy
Total switching energy
td(on)
tr
td(off)
tf
Eon
Eoff
Ets
Tvj=25°C,
VCC=400V,IC=25.0A,
VGE=0.0/15.0V,
RG(on)=16.0Ω,RG(off)=16.0Ω,
Lσ=45nH,Cσ=32pF
Lσ,CσfromFig.E
Energy losses include “tail” and
diode reverse recovery.
min.
Value
typ.
max. Unit
- 46 - ns
- 33 - ns
- 400 - ns
- 20 - ns
- 1.85 - mJ
- 0.70 - mJ
- 2.55 - mJ
5 Rev.1.2,2015-03-27
5 Page 
ReverseConductingSeries
IKW50N65WR5
D = 0.5
1
D = 0.5
0.2 0.2
0.1 0.1
0.05 0.05
0.1 0.02
0.02
0.01 0.01
single pulse
0.1
single pulse
0.01
1E-6
i: 1 2 3 4
ri[K/W]: 0.1509923 0.1847515 0.1958118 6.0E-3
τi[s]: 2.0E-4
3.3E-3
0.0146925 0.2126033
1E-5
1E-4
0.001
0.01
tp,PULSEWIDTH[s]
0.1
Figure 17. IGBTtransientthermalimpedance
(D=tp/T)
0.01
1E-6
i: 1
23
4
5
ri[K/W]: 0.7038717 1.0081 0.3567227 0.2177746 8.5E-3
τi[s]: 1.4E-4
3.7E-4 3.4E-3
0.01523878 0.2085516
1E-5
1E-4
0.001
tp,PULSEWIDTH[s]
0.01
Figure 18. Diodetransientthermalimpedanceasa
functionofpulsewidth
(D=tp/T)
250
Tvj=25°C,IF=25A
Tvj=175°C,IF=25A
225
200
175
5.0
Tvj=25°C,IF=25A
4.5 Tvj=175°C,IF=25A
4.0
3.5
3.0
150 2.5
125 2.0
1.5
100
1.0
75 0.5
50
500
700
900
1100
1300
1500
diF/dt,DIODECURRENTSLOPE[A/µs]
Figure 19. Typicalreverserecoverytimeasafunction
ofdiodecurrentslope
(VR=400V)
0.0
500
700
900
1100
1300
1500
diF/dt,DIODECURRENTSLOPE[A/µs]
Figure 20. Typicalreverserecoverychargeasa
functionofdiodecurrentslope
(VR=400V)
11 Rev.1.2,2015-03-27
11 Page | ||
| Páginas | Total 15 Páginas | |
| PDF Descargar | [ Datasheet IKW50N65WR5.PDF ] | |
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