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PDF BUK724R5-30C Data sheet ( Hoja de datos )
| Número de pieza | BUK724R5-30C | |
| Descripción | N-channel TrenchMOS intermediate level FET | |
| Fabricantes | NXP Semiconductors | |
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BUK724R5-30C
N-channel TrenchMOS standard level FET
Rev. 01 — 1 July 2010
Product data sheet
1. Product profile
1.1 General description
Standard level gate drive N-channel enhancement mode Field-Effect Transistor (FET) in a
plastic package using advanced TrenchMOS technology. This product has been designed
and qualified to the appropriate AEC standard for use in high performance automotive
applications.
1.2 Features and benefits
AEC Q101 compliant
Avalanche robust
Suitable for standard level gate drive
Suitable for thermally demanding
environment up to 175°C rating
1.3 Applications
12V Motor, lamp and solenoid loads
High performance automotive power
systems
High performance Pulse Width
Modulation (PWM) applications
1.4 Quick reference data
Table 1. Quick reference data
Symbol Parameter
Conditions
VDS
drain-source
Tj ≥ 25 °C; Tj ≤ 175 °C
voltage
ID
drain current
VGS = 10 V; Tj = 25 °C;
see Figure 1
Ptot
total power
Tmb = 25 °C; see Figure 2
dissipation
Static characteristics
RDSon
drain-source
on-state
resistance
VGS = 10 V; ID = 25 A;
Tj = 25 °C; see Figure 12;
see Figure 13
Avalanche ruggedness
EDS(AL)S
non-repetitive
drain-source
avalanche energy
Dynamic characteristics
ID = 75 A; Vsup ≤ 30 V;
RGS = 50 Ω; VGS = 10 V;
Tj(init) = 25 °C; unclamped
QGD
gate-drain charge VGS = 10 V; ID = 25 A;
VDS = 24 V; Tj = 25 °C;
see Figure 14
Min Typ Max Unit
- - 30 V
[1] - - 75 A
- - 157 W
- 3.8 4.5 mΩ
- - 329 mJ
- 21 - nC
1 page  
NXP Semiconductors
103
ID
(A)
102
10
1
10-1
10-1
Limit RDSon = VDS / ID
1
BUK724R5-30C
N-channel TrenchMOS standard level FET
DC
100 ms
10 ms
10
003aac350
10 μs
100 μs
1 ms
VDS (V)
102
Fig 4. Safe operating area; continuous and peak drain currents as a function of drain-source voltage
5. Thermal characteristics
Table 5.
Symbol
Rth(j-mb)
Rth(j-a)
Thermal characteristics
Parameter
thermal resistance
from junction to
mounting base
thermal resistance
from junction to
ambient
Conditions
see Figure 5
Min Typ Max Unit
- 0.65 0.95 K/W
- 70 - K/W
1
Zth(j-mb)
(K/W)
δ = 0.5
0.2
10-1
0.1
0.05
0.02
003aac067
10-2
single shot
P δ = tp
T
10-3
10-6
10-5
10-4
10-3
10-2
tp
T
10-1 tp (s)
t
1
Fig 5. Transient thermal impedance from junction to mounting base as a function of pulse duration
BUK724R5-30C
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 01 — 1 July 2010
© NXP B.V. 2010. All rights reserved.
5 of 14
5 Page 
NXP Semiconductors
BUK724R5-30C
N-channel TrenchMOS standard level FET
8. Revision history
Table 7. Revision history
Document ID
Release date
BUK724R5-30C v.1
20100701
Data sheet status
Product data sheet
Change notice
-
Supersedes
-
BUK724R5-30C
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 01 — 1 July 2010
© NXP B.V. 2010. All rights reserved.
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