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MJE13003-V の電気的特性と機能

MJE13003-VのメーカーはUnisonic Technologiesです、この部品の機能は「NPN SILICON TRANSISTOR」です。


製品の詳細 ( Datasheet PDF )

部品番号 MJE13003-V
部品説明 NPN SILICON TRANSISTOR
メーカ Unisonic Technologies
ロゴ Unisonic Technologies ロゴ 




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MJE13003-V Datasheet, MJE13003-V PDF,ピン配置, 機能
UNISONIC TECHNOLOGIES CO., LTD
MJE13003-V
NPN SILICON TRANSISTOR
NPN SILICON POWER
TRANSISTOR
„ DESCRIPTION
These devices are designed for high-voltage, high-speed
power switching inductive circuits where fall time is critical. They
are particularly suited for 115 and 220V applications in switch
mode.
„ FEATURES
* Reverse biased SOA with inductive load @ TC=100°C
* Inductive switching matrix 0.5 ~ 1.5 Amp, 25 and 100°C
Typical tC = 290ns @ 1A, 100°C.
* 700V blocking capability
„ APPLICATIONS
* Switching regulator’s, inverters
* Motor controls
* Solenoid/relay drivers
* Deflection circuits
www.unisonic.com.tw
Copyright © 2014 Unisonic Technologies Co., Ltd
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MJE13003-V pdf, ピン配列
MJE13003-V
NPN SILICON TRANSISTOR
„ ABSOLUTE MAXIMUM RATINGS
PARAMETER
SYMBOL
RATINGS
Collector-Emitter Voltage
Collector-Base Voltage
Emitter Base Voltage
Collector Current
Base Current
Emitter Current
Continuous
Peak (1)
Continuous
Peak (1)
Continuous
Peak (1)
VCEO(SUS)
VCBO
VEBO
IC
ICM
IB
IBM
IE
IEM
400
700
9
1.5
3
0.75
1.5
2.25
4.5
TO-126/TO-126C
TO-126S
1.4
TA=25°C
TO-92/TO-92NL
TO-220
1.1
2
Power Dissipation
TO-251/TO-251S
TO-252
TO-126/TO-126C
TO-126S
PD
1.56
20
TC=25°C
TO-92/TO-92NL
TO-220
1.5
40
TO-251/TO-251S
TO-252
25
Junction Temperature
TJ +150
Storage Temperature
TSTG
-55 ~ +150
Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
UNIT
V
V
V
A
A
A
W
W
W
W
W
W
W
W
°C
°C
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
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MJE13003-V 電子部品, 半導体
MJE13003-V
NPN SILICON TRANSISTOR
„ SWITCHING TIMES NOTE
In resistive switching circuits, rise, fall, and storage times have been defined and apply to both current and voltage
waveforms since they are in phase. However, for inductive loads, which are common to switch mode power supplies
and hammer drivers, current and voltage waveforms are not in phase. Therefore, separate measurements must be
made on each waveform to determine the total switching time. For this reason, the following new terms have been
defined.
tSV = Voltage Storage Time, 90% IB1 to 10% VCLAMP
tRV = Voltage Rise Time, 10 ~ 90% VCLAMP
tFI= Current Fall Time, 90 ~ 10% IC
tTI = Current Tail, 10 ~ 2% IC
tC = Crossover Time, 10% VCLAMP to 10% IC
For the designer, there is minimal switching loss during storage time and the predominant switching power losses
occur during the crossover interval and can be obtained using the standard equation:
PSWT = 1/2 VCCIC (tC) f
In general, tRV + tFI tC. However, at lower test currents this relationship may not be valid.
As is common with most switching transistors, resistive switching is specified at 25°C and has become a
benchmark for designers. However, for designers of high frequency converter circuits, the user oriented
specifications which make this transistor are the inductive switching speeds (tC and tSV) which are guaranteed at
100°C.
RESISTIVE SWITCHING PERFORMANCE
2
1
0.7
tR
0.5
Vcc=125V
Ic/IB=5
TJ=25°C
0.3
0.2
tD @ VBE(OFF)=5V
0.1
0.07
0.05
0.03
0.02
0.02 0.03
0.05 0.07 0.1
0.2 0.3 0.5 0.7 10
Collector Current, IC (A)
Fig.2 Turn-On Time
20
10
7
5
ts
Vcc=125V
Ic/IB=5
TJ=25°C
3
2
1
0.7
0.5
0.3 tF
0.2
0.1
0.02 0.03 0.050.07 0.1
0.2 0.3 0.5 0.7 1
Collector Current, IC (A)
Fig.3 Turn-Off Time
2
Fig.4 Thermal Response
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
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