Datasheet 1N23WE Equivalent ( PDF )

N.º	Número de pieza	Descripción	Fabricantes	Category
1	1N23WE	Diode, Rectifier	American Microsemiconductor	diode
2	1N23WE	SILICON MIXER DIODE 1N23WE SILICON MIXER DIODE DESCRIPTION: The ASI 1N23WE is a Silicon Mixer Diode Designed for Applications Operating From 8.0 to 12.4 GHz. PACKAGE STYLE DO- 23 FEATURES: • High burnout resistance • Low noise figure • Hermetically sealed package MAXIMUM RATINGS IF VR PDISS TJ TSTG O O 20 mA	Advanced Semiconductor	diode
3	1N23WE	DIODE Technical Data DIODE maximum ratings Voltage, Reverse (VR) Voltage, Reverse Peak (VRM) Current at VR = OV (IO) Current Average Rectified (IF) Current Surge Peak (IFM) Current, Surge (IFM) at tp = Max. Power Dissipation (PT) at TC = °C Max. Thermal Resistance (Rth J-A) Max. Junction Temperature (T	DSI	diode

1N2 Datasheet ( Hoja de datos ) - resultados coincidentes

N.º	Número de pieza	Descripción	Fabricantes	Catagory
1	1N200	General Purpose Diodes DataSheet4U.com ee DataSh DataSheet4U.com DataSheet 4 U .com	International Semiconductor	diode
2	1N2008	Zener Diode	Solid State	diode
3	1N2009	Zener Diode	Solid State	diode
4	1N201	General Purpose Diodes DataSheet4U.com ee DataSh DataSheet4U.com DataSheet 4 U .com	International Semiconductor	diode
5	1N2010	Zener Diode	Solid State	diode
6	1N2011	Zener Diode	Solid State	diode
7	1N2012	Zener Diode	Solid State	diode

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Número de pieza	Descripción	Fabricantes	PDF
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