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10N80のメーカーはnELLです、この部品の機能は「N-Channel Power MOSFET / Transistor」です。 |
部品番号 | 10N80 |
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部品説明 | N-Channel Power MOSFET / Transistor | ||
メーカ | nELL | ||
ロゴ | |||
このページの下部にプレビューと10N80ダウンロード(pdfファイル)リンクがあります。 Total 6 pages
SEMICONDUCTOR
10N80 Series RRooHHSS
Nell High Power Products
N-Channel Power MOSFET
10A, 800Volts
DESCRIPTION
The Nell 10N80 is a three-terminal silicon device
with current conduction capability of 10A, fast switching
speed, low on-state resistance, breakdown voltage
rating of 800V, and max. threshold voltage of 5 volts.
They are designed for use in applications such as
switched mode power supplies, DC to DC converters,
PWM motor controls, bridge circuits and general
purpose switching applications.
FEATURES
RDS(ON) = 1.1Ω @ VGS = 10V
Ultra low gate charge(58nC max.)
Low reverse transfer capacitance
(CRSS = 15pF typical)
Fast switching capability
100% avalanche energy specified
Improved dv/dt capability
150°C operation temperature
D
G
D
S
TO-3PB
(10N80B)
GDS
TO-220F
(10N80AF)
D (Drain)
G
(Gate)
S (Source)
PRODUCT SUMMARY
ID (A)
VDSS (V)
RDS(ON) (Ω)
QG(nC) max.
10
800
1.1 @ VGS = 10V
58
ABSOLUTE MAXIMUM RATINGS (TC = 25°C unless otherwise specified)
SYMBOL
PARAMETER
TEST CONDITIONS
VDSS
Drain to Source voltage
TJ=25°C to 150°C
VDGR
Drain to Gate voltage
RGS=20KΩ
VGS Gate to Source voltage
ID Continuous Drain Current
TC=25°C
TC=100°C
IDM Pulsed Drain current(Note 1)
IAR Avalanche current(Note 1)
EAR Repetitive avalanche energy(Note 1)
lAR=10A, RGS=50Ω, VGS=10V
EAS Single pulse avalanche energy(Note 2)
lAS=10A, L=17.3mH
dv/dt
Peak diode recovery dv/dt(Note 3)
Total power dissipation
PD
Linear derating factor above TC=25°C
TC=25°C
TC=25°C
TO-3PB
TO-220F
TO-3PB
TO-220F
TJ
TSTG
TL
Operation junction temperature
Storage temperature
Maximum soldering temperature, for 10 seconds
Mounting torque, #6-32 or M3 screw
1.6mm from case
Note: 1.Repetitive rating: pulse width limited by junction temperature.
2.lAS=10A, L=17.3mH, VDD=50V, RGS =25Ω, starting TJ =25°C.
3.ISD ≤ 10A, di/dt ≤ 200A/µs, VDD ≤ V(BR)DSS, starting TJ = 25°C.
VALUE
800
800
±30
10
6.2
40
10
24
920
4
240
37
1.92
0.296
-55 to 150
-55 to 150
300
10 (1.1)
UNIT
V
A
mJ
V /ns
W
°C/W
ºC
lbf.in (N.m)
www.nellsemi.com
Page 1of 6
1 Page SEMICONDUCTOR
ORDERING INFORMATION SCHEME
Current rating, ID
10 = 10A
MOSFET series
N = N-Channel
Voltage rating, VDS
80 = 800V
Package type
B = TO-3PB
AF = TO-220F
10N80 Series RRooHHSS
Nell High Power Products
10 N 80 B
■ TEST CIRCUITS
Fig.1A Peak diode recovery dv/dt test circuit
D.U.T.
+
-
+
VDS
-
L
RG
VGS
Same Type
as D.U.T.
Driver
* dv/dt controlled by RG
* lSD controlled by pulse period
* D.U.T.-Device under test
VDD
Fig.1B Peak diode recovery dv/dt waverforms
VGS
(Driver)
lSD
(D.U.T)
VDS
(D.U.T)
P.W.
Period
D= P.W.
Period
VGS=10V
lFM, Body Diode forward current
di/dt
lRM
Body Diode Reverse Current
Body Diode Recovery dv/dt
VDD
Body Diode
Forward Voltage Drop
www.nellsemi.com
Page 3of 6
3Pages SEMICONDUCTOR
TO-3PB
10N80 Series RRooHHSS
Nell High Power Products
15.6±0.4
9.6
4.8±0.2
2.0±0.1
Φ3.2±0,1
2
3
1.
05
+0.2
-0.1
5.45±0.1
5.45±0.1
GD S
12 3
0.65
+0.2
-0.1
1.4
D (Drain)
All dimensions in millimeters
G
(Gate)
S (Source)
TO-220F
16.4
15.4
10.6
10.4
2
13
3.4
3.1
3.7
3.2 7.1
6.7
16.0
15.8
2.8
2.6
10°
3.3
3.1
13.7
13.5
2.54
TYP
0.9
0.7
2.54
TYP
4.8
4.6
0.48
0.44
2.85
2.65
D (Drain)
www.nellsemi.com
All dimensions in millimeters
Page 6of 6
G
(Gate)
S (Source)
6 Page | |||
ページ | 合計 : 6 ページ | ||
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PDF ダウンロード | [ 10N80 データシート.PDF ] |
データシートを活用すると、その部品の主な機能と仕様を詳しく理解できます。 ピン構成、電気的特性、動作パラメータ、性能を確認してください。 |
部品番号 | 部品説明 | メーカ |
10N80 | N-Channel Mosfet Transistor | Inchange Semiconductor |
10N80 | N-CHANNEL POWER MOSFET | Unisonic Technologies |
10N80 | N-Channel Power MOSFET / Transistor | nELL |