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183T2C PDF Data sheet ( 特性 )

部品番号 183T2C
部品説明 TRANSISTOR
メーカ DSI
ロゴ DSI ロゴ 


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183T2C Datasheet, 183T2C PDF,ピン配置, 機能
Technical Data
TRANSISTOR
maximum ratings
Voltage, Collector to Base (VCBO)
Voltage, Collector to Emitter (VCE)
Voltage, Emitter to Base (VEBO)
Collector Current (IC)
Base Current (IB)
Max. Power Dissipation (PT) at TC = 25 °C
Max. Thermal Resistance (Rth J-C)
Max. Junction Temperature (TJ)
empty
300.0 V
180.0 V
10.0 V
6.0 A
3.0 A
87.5 W
2.0 °C/W
200.0 °C
empty empty
NO.
TYPE
empty
empty
CASE
empty
empty
183T2C
NPN
empty
empty
TO-3
empty
empty
PERFORMANCE CHARACTERISTICS at T = 25°C, unless otherwise noted
C
NO. SYMBOL
CONDITIONS
MIN.
MAX.
UNITS
1. BVCEO
IC = 50.0 mA
(1) 180.0
-
V
2. BVCBO
IE = 3.0 mA
(1) 300.0
-
V
3. ICEO
VCE = 180.0 V
- 1.0 mA
4. ICES
VCE = 250.0 V
- 1.0 mA
5. IEBO
VEB = 10.0 V
- 1.0 mA
6. hFE
IC = 2.0 A, VCE = 4.0 V
(1) 75.0
180.0
-
7. VCE(SAT) IC = 2.0 A, IB = 250.0 mA
(1) - 0.6 V
8. VBE(SAT) IC = 2.0 A, IB = 250.0 mA
(1) - 1.2 V
9. fT
VCE = 15.0 V, IC = 0.5 A, f = 10.0 MHz
10.0 - MHz
10. t(ON)
IC = 5.0 A, IB = 1.0 A
- 1.0 µs
11. tOFF
IC = 5.0 A, IB = 1.0 A
- 6.0 µs
12.
13.
14.
15.
16.
17.
18.
19.
20.
Notes
(1)pulse-tested tp 300 µs, duty cycle 2 %
empty
empty
empty
DIMENSIONS
in mm
Marking 183T2C
Customer GENERAL PURPOSE

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