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Número de pieza | D5NM50 | |
Descripción | STD5NM50 | |
Fabricantes | STMicroelectronics | |
Logotipo | ||
Hay una vista previa y un enlace de descarga de D5NM50 (archivo pdf) en la parte inferior de esta página. Total 10 Páginas | ||
No Preview Available ! STD5NM50
STD5NM50-1
N-CHANNEL 500V - 0.7Ω - 7.5A DPAK/IPAK
MDmesh™Power MOSFET
TYPE
VDSS
RDS(on)
ID
STD5NM50
STD5NM50-1
500V
500V
<0.8Ω
<0.8Ω
7.5 A
7.5 A
n TYPICAL RDS(on) = 0.7Ω
n HIGH dv/dt AND AVALANCHE CAPABILITIES
n 100% AVALANCHE TESTED
n LOW INPUT CAPACITANCE AND GATE
CHARGE
n LOW GATE INPUT RESISTANCE
n TIGHT PROCESS CONTROL AND HIGH
MANUFACTURING YIELDS
DESCRIPTION
The MDmesh™ is a new revolutionary MOSFET
technology that associates the Multiple Drain pro-
cess with the Company’s PowerMESH™ horizontal
layout. The resulting product has an outstanding low
on-resistance, impressively high dv/dt and excellent
avalanche characteristics. The adoption of the
Company’s proprietary strip technique yields overall
dynamic performance that is significantly better than
that of similar competition’s products.
APPLICATIONS
The MDmesh™ family is very suitable for increasing
power density of high voltage converters allowing
system miniaturization and higher efficiencies.
3
1
DPAK
TO-252
3
2
1
IPAK
TO-251
(Add Suffix “-1”)
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
VDS
VDGR
VGS
Drain-source Voltage (VGS = 0)
Drain-gate Voltage (RGS = 20 kΩ)
Gate- source Voltage
ID Drain Current (continuous) at TC = 25°C
ID Drain Current (continuous) at TC = 100°C
IDM (l) Drain Current (pulsed)
PTOT
Total Dissipation at TC = 25°C
Derating Factor
dv/dt (1) Peak Diode Recovery voltage slope
Tstg Storage Temperature
Tj Max. Operating Junction Temperature
(•)Pulse width limited by safe operating area
September 2002
Value
500
500
±30
7.5
4.7
30
100
0.8
15
Unit
V
V
V
A
A
A
W
W/°C
V/ns
– 55 to 150
°C
(1) ISD ≤ 5A, di/dt ≤ 400A/µs, VDD ≤ V(BR)DSS, Tj ≤ TJMAX.
1/10
1 page Normalized Gate Threshold Voltage vs
Temperature
STD5NM50/STD5NM50-1
Normalized On Resistance vs Temperature
Source-drain Diode Forward Characteristics
Normalized BVDSS vs Temperature
5/10
5 Page |
Páginas | Total 10 Páginas | |
PDF Descargar | [ Datasheet D5NM50.PDF ] |
Número de pieza | Descripción | Fabricantes |
D5NM50 | STD5NM50 | STMicroelectronics |
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