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PDF PSMN130-200D Data sheet ( Hoja de datos )
| Número de pieza | PSMN130-200D | |
| Descripción | N-channel TrenchMOS SiliconMAX standard level FET | |
| Fabricantes | NXP Semiconductors | |
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PSMN130-200D
N-channel TrenchMOS SiliconMAX standard level FET
Rev. 04 — 20 December 2010
Product data sheet
1. Product profile
1.1 General description
SiliconMAX standard level N-channel enhancement mode Field-Effect Transistor (FET) in
a plastic package using TrenchMOS technology. This product is designed and qualified for
use in computing, communications, consumer and industrial applications only.
1.2 Features and benefits
Higher operating power due to low
thermal resistance
Low conduction losses due to low
on-state resistance
Suitable for high frequency
applications due to fast switching
characteristics
1.3 Applications
DC-to-DC converters
Switched-mode power supplies
1.4 Quick reference data
Table 1. Quick reference data
Symbol
VDS
Parameter
drain-source
voltage
Conditions
Tj ≥ 25 °C; Tj ≤ 175 °C
ID
drain current
Tmb = 25 °C; VGS = 10 V
Ptot
total power
Tmb = 25 °C
dissipation
Static characteristics
RDSon
drain-source
on-state
resistance
VGS = 10 V; ID = 25 A;
Tj = 25 °C
Dynamic characteristics
QGD
gate-drain charge VGS = 10 V; ID = 20 A;
VDS = 160 V; Tj = 25 °C
Min Typ Max Unit
- - 200 V
- - 20 A
- - 150 W
- 120 130 mΩ
- 22 - nC
1 page  
NXP Semiconductors
PSMN130-200D
N-channel TrenchMOS SiliconMAX standard level FET
6. Characteristics
Table 6. Characteristics
Symbol
Parameter
Static characteristics
V(BR)DSS
drain-source
breakdown voltage
VGS(th)
gate-source threshold
voltage
IDSS drain leakage current
IGSS gate leakage current
RDSon
drain-source on-state
resistance
Dynamic characteristics
QG(tot)
QGS
QGD
Ciss
Coss
Crss
total gate charge
gate-source charge
gate-drain charge
input capacitance
output capacitance
reverse transfer
capacitance
td(on)
tr
td(off)
tf
LD
turn-on delay time
rise time
turn-off delay time
fall time
internal drain
inductance
LS internal source
inductance
Source-drain diode
VSD source-drain voltage
trr reverse recovery time
Qr recovered charge
Conditions
ID = 0.25 mA; VGS = 0 V; Tj = -55 °C
ID = 0.25 mA; VGS = 0 V; Tj = 25 °C
ID = 1 mA; VDS = VGS; Tj = -55 °C
ID = 1 mA; VDS = VGS; Tj = 25 °C
ID = 1 mA; VDS = VGS; Tj = 175 °C
VDS = 150 V; VGS = 0 V; Tj = 25 °C
VDS = 150 V; VGS = 0 V; Tj = 175 °C
VGS = 10 V; VDS = 0 V; Tj = 25 °C
VGS = -10 V; VDS = 0 V; Tj = 25 °C
VGS = 10 V; ID = 25 A; Tj = 175 °C
VGS = 10 V; ID = 25 A; Tj = 25 °C
ID = 20 A; VDS = 160 V; VGS = 10 V;
Tj = 25 °C
VDS = 25 V; VGS = 0 V; f = 1 MHz;
Tj = 25 °C
VDS = 100 V; RL = 4.7 Ω; VGS = 10 V;
RG(ext) = 5.6 Ω; Tj = 25 °C
from tab to centre of die; Tj = 25 °C
from source lead to source bond pad;
Tj = 25 °C
IS = 25 A; VGS = 0 V; Tj = 25 °C
IS = 20 A; dIS/dt = -100 A/µs;
VGS = -10 V; VDS = 25 V; Tj = 25 °C
Min Typ Max Unit
178 - - V
200 - - V
- - 6V
234V
1- - V
- 0.05 10 µA
- - 500 µA
- 0.02 100 nA
- 0.02 100 nA
- - 377 mΩ
- 120 130 mΩ
- 65 - nC
- 10 - nC
- 22 - nC
- 2470 - pF
- 207 - pF
- 90 - pF
- 15 - ns
- 46 - ns
- 50 - ns
- 38 - ns
- 3.5 - nH
- 7.5 - nH
- 0.95 1.2 V
- 124 - ns
- 0.74 - µC
PSMN130-200D
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 04 — 20 December 2010
© NXP B.V. 2010. All rights reserved.
5 of 12
5 Page 
NXP Semiconductors
PSMN130-200D
N-channel TrenchMOS SiliconMAX standard level FET
agreement shall apply. NXP Semiconductors hereby expressly objects to
applying the customer’s general terms and conditions with regard to the
purchase of NXP Semiconductors products by customer.
No offer to sell or license — Nothing in this document may be interpreted or
construed as an offer to sell products that is open for acceptance or the grant,
conveyance or implication of any license under any copyrights, patents or
other industrial or intellectual property rights.
Export control — This document as well as the item(s) described herein may
be subject to export control regulations. Export might require a prior
authorization from national authorities.
Non-automotive qualified products — Unless this data sheet expressly
states that this specific NXP Semiconductors product is automotive qualified,
the product is not suitable for automotive use. It is neither qualified nor tested
in accordance with automotive testing or application requirements. NXP
Semiconductors accepts no liability for inclusion and/or use of
non-automotive qualified products in automotive equipment or applications.
In the event that customer uses the product for design-in and use in
automotive applications to automotive specifications and standards, customer
(a) shall use the product without NXP Semiconductors’ warranty of the
product for such automotive applications, use and specifications, and (b)
whenever customer uses the product for automotive applications beyond
NXP Semiconductors’ specifications such use shall be solely at customer’s
own risk, and (c) customer fully indemnifies NXP Semiconductors for any
liability, damages or failed product claims resulting from customer design and
use of the product for automotive applications beyond NXP Semiconductors’
standard warranty and NXP Semiconductors’ product specifications.
9.4 Trademarks
Notice: All referenced brands, product names, service names and trademarks
are the property of their respective owners.
Adelante, Bitport, Bitsound, CoolFlux, CoReUse, DESFire, EZ-HV,
FabKey, GreenChip, HiPerSmart, HITAG, I²C-bus logo, ICODE, I-CODE,
ITEC, Labelution, MIFARE, MIFARE Plus, MIFARE Ultralight, MoReUse,
QLPAK, Silicon Tuner, SiliconMAX, SmartXA, STARplug, TOPFET,
TrenchMOS, TriMedia and UCODE — are trademarks of NXP B.V.
HD Radio and HD Radio logo — are trademarks of iBiquity Digital
Corporation.
10. Contact information
For more information, please visit: http://www.nxp.com
For sales office addresses, please send an email to: [email protected]
PSMN130-200D
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 04 — 20 December 2010
© NXP B.V. 2010. All rights reserved.
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