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1N6268 の電気的特性と機能

1N6268のメーカーはGeneral Semiconductorです、この部品の機能は「TRANSZORB TRANSIENT VOLTAGE SUPPRESSOR」です。


製品の詳細 ( Datasheet PDF )

部品番号 1N6268
部品説明 TRANSZORB TRANSIENT VOLTAGE SUPPRESSOR
メーカ General Semiconductor
ロゴ General Semiconductor ロゴ 




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1N6268 Datasheet, 1N6268 PDF,ピン配置, 機能
1.5KE6.8 THRU 1.5KE440CA
TRANSZORB™ TRANSIENT VOLTAGE SUPPRESSOR
Breakdown Voltage - 6.8 to 440 Volts Peak Pulse Power - 1500 Watts
Case Style 1.5KE
0.210 (5.3)
0.190 (4.8)
DIA.
1.0 (25.4)
MIN.
0.375 (9.5)
0.285 (7.2)
0.042 (1.07)
0.038 (0.96)
DIA.
1.0 (25.4)
MIN.
Dimensions in inches and (millimeters)
FEATURES
Plastic package has Underwriters Laboratory
Flammability Classification 94V-0
Glass passivated junction
1500W peak pulse power
capability on 10/1000µs waveform
repetition rate (duty cycle): 0.05%
Excellent clamping capability
Low incremental surge resistance
Fast response time: typically less
than 1.0ps from 0 Volts to V(BR) for uni-directional
and 5.0ns for bi-directional types
For devices with V(BR) >10V, ID are typically less
than 1.0µA
High temperature soldering guaranteed:
265°C/10 seconds, 0.375" (9.5mm) lead length,
5lbs. (2.3 kg) tension
Includes 1N6267 thru 1N6303
MECHANICAL DATA
Case: Molded plastic body over passivated junction
Terminals: Plated axial leads, solderable per MIL-STD-750,
Method 2026
Polarity: Color band denotes positive end (cathode) except
for bi-directional
Mounting Position: Any
Weight: 0.045 ounce, 1.2 grams
DEVICES FOR BI-DIRECTIONAL APPLICATIONS
For bidirectional use C or CA suffix for types 1.5KE6.8 thru types 1.5KE440A (e.g. 1.5KE6.8C, 1.5KE440CA).
Electrical characteristics apply in both directions.
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25°C ambient temperature unless otherwise specified.
Peak pulse power dissipation with a 10/1000µs
waveform (NOTE 1, Fig. 1)
Peak pulse current with a 10/1000µs waveform
(NOTE 1)
Steady state power dissipation at TL=75°C
lead lengths, 0.375" (9.5mm) (NOTE 2)
Peak forward surge current, 8.3ms single half sine-wave
superimposed on rated load (JEDEC Method)
unidirectional only (NOTE 3)
Maximum instantaneous forward voltage at 100A for
unidirectional only (NOTE 4)
Operating junction and storage temperature range
SYMBOL
PPPM
IPPM
PM(AV)
IFSM
VF
TJ, TSTG
NOTES:
(1) Non-repetitive current pulse, per Fig. 3 and derated above TA=25°C per Fig. 2
(2) Mounted on copper pad area of 1.6 x 1.6” (40 x 40mm) per Fig. 5
(3) Measured on 8.3ms single half sine-wave or equivalent square wave duty cycle=4 pulses per minute maximum
(4) VF=3.5V for devices of V(BR)220V and VF=5.0 Volt max. for devices of V(BR)>220V
VALUE
Minimum 1500
SEE TABLE 1
6.5
200
3.5/5.0
-55 to +175
1/21/99
UNITS
Watts
Amps
Watts
Amps
Volts
°C

1 Page





1N6268 pdf, ピン配列
ELECTRICAL CHARACTERISTICS at (TA=25 C unless otherwise noted) TABLE 1 (Cont’d)
JEDEC
TYPE
NUMBER
1N6291A
1N6292
1N6292A
1N6293
1N6293A
1N6294
1N6294A
1N6295
1N6295A
1N6296
1N6296A
1N6297
1N6297A
1N6298
1N6298A
1N6299
1N6299A
1N6300
1N6300A
1N6301
1N6301A
1N6302
1N6302A
1N6303
1N6303A
General
Semiconductor
PART
NUMBER
1.5KE68A
1.5KE75
1.5KE75A
1.5KE82
1.5KE82A
1.5KE91
1.5KE91A
1.5KE100
1.5KE100A
1.5KE110
1.5KE 110A
1.5KE120
1.5KE120A
1.5KE130
1.5KE130A
1.5KE150
1.5KE150A
1.5KE160
1.5KE160A
1.5KE170
1.5KE170A
1.5KE180
1.5KE180A
1.5KE200
1.5KE200A*
1.5KE220
1.5KE220A*
1.5KE250
1.5KE250A
1.5KE300
1.5KE300A
1.5KE350
1.5KE350A
1.5KE400
1.5KE400A
1.5KE440
1.5KE440A
Breakdown Voltage
V(BR)
(Volts)
(NOTE 1)
Min
64.6
67.5
71.3
73.8
77.9
81.9
86.5
90.0
95.0
99.0
105
108
114
117
124
136
143
144
152
153
162
162
171
180
190
198
209
225
237
270
285
315
333
360
380
396
418
Max
71.4
82.5
78.8
90.2
86.1
100.0
95.5
110
105
121
116
132
126
143
137
165
158
176
168
187
179
198
189
220
210
242
231
275
263
330
315
385
368
440
420
484
462
Test
Current
at
(mA) IT
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
Stand-off
Voltage
VWM
(Volts)
58.1
60.7
64.1
66.4
70.1
73.7
77.8
81.0
85.5
89.2
94.0
97.2
102
105
111
121
128
130
136
138
145
146
154
162
171
175
185
202
214
243
256
284
300
324
342
356
376
Maximum
Reverse
Leakage
at VWM
ID (NOTE 4) (µA)
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
Maximum
Peak Pulse
Current IPPM
(NOTE 2)
Amps
16.3
13.9
14.6
12.7
13.3
11.5
12.0
10.4
10.9
9.5
9.9
8.7
9.1
8.0
8.4
7.0
7.2
6.5
6.8
6.1
6.4
5.8
6.1
5.2
5.5
4.4
4.6
4.2
4.4
3.5
3.6
3.0
3.1
2.6
2.7
2.4
2.5
Maximum
Clamping
Voltage at IPPM
Vc
(Volts)
92.0
109
104
118
113
131
125
144
137
158
152
173
165
187
179
215
207
230
219
244
234
258
246
287
274
344
328
360
344
430
414
504
482
574
548
631
602
Maximum
Temperature
Coefficient of V(BR)
(% / °C)
0.104
0.105
0.105
0.105
0.105
0.106
0.106
0.106
0.106
0.107
0.107
0.107
0.107
0.107
0.107
0.108
0.106
0.106
0.108
0.108
0.108
0.108
0.108
0.108
0.108
0.108
0.108
0.110
0.110
0.110
0.110
0.110
0.110
0.110
0.110
0.110
0.110
NOTES:
(1) V(BR) measured after IT applied for 300µs, IT=square wave pulse or equivalent
(2) Surge current waveform per Fig. 3 and derate per Fig. 2
(3) All terms and symbols are consistent with ANSI/IEEE CA62.35
(4) For bidirectional types with VR 10 volts and less the ID limit is doubled
* Bidirectional versions are UL approved under component across the line protection, ULV1414 file number E108274
(1.5KE200CA, 1.5KE220CA)
+ UL listed for Telecom applications protection, 497B, file number E136766 for both uni-directional and bi-directional devices
APPLICATION
This series of Silicon Transient Suppressors is used in applications where large voltage transients can permanently damage voltage-sensitive components.
The TVS diode can be used in applications where induced lightning on rural or remote transmission lines presents a hazard to electronic circuitry
(ref: R.E.A. specification P.E. 60).
This Transient Voltage Suppressor diode has a pulse power rating of 1500 watts for one millisecond. The response time of TVS diode clamping action is effectively instan-
taneous (1 x 10-9 seconds bidirectional); therefore, they can protect integrated circuits, MOS devices, hybrids, and other voltage sensitive semiconductors and components.
TVS diodes can also be used in series or parallel to increase the peak power ratings.


3Pages


1N6268 電子部品, 半導体
RATINGS AND CHARACTERISTIC CURVES 1.5KE6.8 THRU 1.5KE440CA
FIG. 11 - INSTANTANEOUS FORWARD
VOLTAGE CHARACTERISTICS CURVE
100
10
PULSE WIDTH=300µs
1% DUTY CYCLE
TJ=25°C
1
0.1
0
UNIDIRECTIONAL (ONLY)
0.4 0.8 1.2 1.6 2.0
INSTANTANEOUS FORWARD CURRENT, AMPERES
1,000
FIG. 12 - BREAKDOWN VOLTAGE
TEMPERATURE COEFFICIENT CURVE
100
UNIDIRECTIONAL
10
BIDIRECTIONAL
1
5 10 20
50 100 200
V(BR), BREAKDOWN VOLTAGE, VOLTS
500

6 Page



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