Datasheet 2N7002 Equivalent ( PDF )

N.º	Número de pieza	Descripción	Fabricantes	Category
1	2N7002	N-Channel Advanced Power MOSFET 2N7002 N-Channel Advanced Power MOSFET Features • 60V/0.5A, RDS (ON) =4500mΩ(Typ.)@VGS=10V RDS (ON) =5250mΩ(Typ.)@VGS=4.5V • Low On-Resistance • Super High Dense Cell Design • Reliable and Rugged • Lead Free and Green Devices Available (RoHS Compliant) Applications • Power Management	Ruichips	mosfet
2	2N7002	N-channel MOSFET 2N7002 N-CHANNEL MOSFET PRODUCT SUMMARY SOT-23 Plastic-Encapsulate Transistors FEATURES High density cell design for low RDS(ON) Voltage controlled small signal switch Rugged and reliable High saturation current capability Pb-free; RoHS-compliant MARKING: 7002 MAXIMUM RATINGS (TA=25 oC unless ot	Silicon Standard	mosfet
3	2N7002	N-CHANNEL MOSFET 2N7002 Rev.E Mar.-2016 DATA SHEET 描述 / Descriptions SOT-23 塑封封装 N 沟道 MOS 场效应管。N-CHANNEL MOSFET in a SOT-23 Plastic Package. 特征 / Features 灵敏的控制级触发电流和很低的维持电流，内置静电保护二极管. Sensitive gate trigger current and Low Hold	BLUE ROCKET ELECTRONICS	mosfet
4	2N7002	N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR 2N7002 N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR VOLTAGE 60 Volts CURRENT 115 mAmp PACKAGE SOT-23 DESCRIPTION • N-channel enhancement mode field effect transistor, designed for high speed pulsed amplifier and driver applications, which is manufactored by the N-Channel DMOS process. FEAT	Pan Jit International Inc.	transistor
5	2N7002	N-channel Trench MOSFET DISCRETE SEMICONDUCTORS DATA SHEET 2N7002 N-channel vertical D-MOS transistor Product speciﬁcation File under Discrete Semiconductors, SC13b April 1995 Philips Semiconductors Product speciﬁcation N-channel vertical D-MOS transistor FEATURES • Direct interface to C-MOS, TTL, etc. • High-	NXP Semiconductors	mosfet

2N7 Datasheet ( Hoja de datos ) - resultados coincidentes

N.º	Número de pieza	Descripción	Fabricantes	Catagory
1	2N70	N-CHANNEL POWER MOSFET UNISONIC TECHNOLOGIES CO., LTD 2N70 2 Amps, 700 Volts N-CHANNEL POWER MOSFET DESCRIPTION Power MOSFET The UTC 2N70 is a high voltage MOSFET designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and high rugged avalanche characteristics. T	Unisonic Technologies	mosfet
2	2N70-M	N-CHANNEL POWER MOSFET UNISONIC TECHNOLOGIES CO., LTD 2N70-M Preliminary 2 Amps, 700 Volts N-CHANNEL POWER MOSFET  DESCRIPTION The UTC 2N70-M is a high voltage MOSFET designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and high rugged avalanche characterist	Unisonic Technologies	mosfet
3	2N7000	N-CHANNEL MOSFET 2N7000 Rev.E Mar.-2016 DATA SHEET 描述 / Descriptions TO-92 塑封封装 N 沟道 MOS 场效应管。N-CHANNEL MOSFET in a TO-92 Plastic Package. 特征 / Features 灵敏的控制级触发电流和很低的维持电流。 Sensitive gate trigger current and Low Holding current. 用途 / Applic	BLUE ROCKET ELECTRONICS	mosfet
4	2N7000	Small Signal MOSFET 2N7000 Small Signal MOSFET 200 mA, 60 V N-Channel Drain Gate Source 1. Source 2.Gate 3.Drain TO-92 Plastic Package Absolute Maximum Ratings (Ta = 25 OC) Parameter Drain Source Voltage Drain-Gate Voltage (RGS = 1 MΩ) Gate-source Voltage Drain Current Continuous Non-repetitive ( tp ≤ 50 �	SEMTECH	mosfet
5	2N7000	N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR SEMICONDUCTOR TECHNICAL DATA INTERFACE AND SWITCHING APPLICATION. FEATURES High density cell design for low RDS(ON). Voltage controlled small signal switch. Rugged and reliable. High saturation current capablity. MAXIMUM RATING (Ta=25 ) CHARACTERISTIC SYMBOL Drain-Source Voltage Gate-Source Vol	KEC	transistor
6	2N7000	Small Signal MOSFET WEITRON Small Signal MOSFET N-Channel 3 DRAIN Features: Low On-Resistance : 5Ω Low Input Capacitance: 60PF Low Out put Capacitance : 25PF Low Threshole :1.4V(TYE) *Fast Switching Speed : 10ns 2 GATE 1 SOURCE 2N7000 TO-92 1. SOURCE 2. GATE 3. DRAIN 1 2 3 Maximum Ratings (TA=25 C Unless	WEITRON	mosfet
7	2N7000	N-Channel Enhancement Mode Power MosFET Elektronische Bauelemente 2N7000 200mA,60V,RDS(ON) 6 N-Channel Enhancement Mode Power Mos.FET RoHS Compliant Product Description The 2N7000 is designed for high voltage, high speed applications such as switching regulators, converters, solenoid and relay drives. D SEATING PLANE b1 TO-92 E S1	SeCoS	mosfet

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Número de pieza	Descripción	Fabricantes	PDF
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