|
|
5N90のメーカーはUnisonic Technologiesです、この部品の機能は「N-CHANNEL POWER MOSFET」です。 |
部品番号 | 5N90 |
| |
部品説明 | N-CHANNEL POWER MOSFET | ||
メーカ | Unisonic Technologies | ||
ロゴ | |||
このページの下部にプレビューと5N90ダウンロード(pdfファイル)リンクがあります。 Total 7 pages
UNISONIC TECHNOLOGIES CO., LTD
5N90
5A, 900V N-CHANNEL
POWER MOSFET
DESCRIPTION
The UTC 5N90 is a N-channel mode power MOSFET using
UTC’s advanced technology to provide customers with planar
stripe and DMOS technology. This technology specialized in
allowing a minimum on-state resistance and superior switching
performance. It also can withstand high energy pulse in the
avalanche and commutation mode.
The UTC 5N90 is universally applied in high efficiency
switch mode power supply.
FEATURES
* RDS(ON) < 2.8Ω @ VGS=10V, ID=2.5A
* High switching speed
* Improved dv/dt capability
* 100% avalanche tested
SYMBOL
Power MOSFET
ORDERING INFORMATION
Ordering Number
Lead Free
Halogen Free
5N90L-TA3-T
5N90G-TA3-T
5N90L-TF3-T
5N90G-TF3-T
5N90L-TF1T
5N90G-TF1T
5N90L-T2Q-T
5N90G-T2Q-T
5N90L-TQ2-T
5N90G-TQ2-T
5N90L-TQ2-R
5N90G-TQ2-R
5N90L-T3P-T
5N90G-T3P-T
Note: Pin Assignment: G: Gate D: Drain S: Source
Package
TO-220
TO-220F
TO-220F1
TO-262
TO-263
TO-263
TO-3P
Pin Assignment
123
GDS
GDS
GDS
GDS
GDS
GDS
GDS
Packing
Tube
Tube
Tube
Tube
Tube
Tape Reel
Tube
www.unisonic.com.tw
Copyright © 2015 Unisonic Technologies Co., Ltd
1 of 6
QW-R502-499.H
1 Page 5N90
Power MOSFET
ABSOLUTE MAXIMUM RATINGS (TC=25°C, unless otherwise specified)
PARAMETER
SYMBOL
RATINGS
UNIT
Drain-Source Voltage
Gate-Source Voltage
VDSS
VGSS
900
±30
V
V
Drain Current
Continuous
Pulsed (Note 2)
ID
IDM
5
12
A
A
Avalanche Energy
Single Pulsed (Note 3)
Repetitive (Note 2)
EAS
EAR
350
5.1
mJ
mJ
Peak Diode Recovery dv/dt (Note 4)
dv/dt 4.0 V/ns
TO-220/TO-262/TO-263
125
Power Dissipation
TO-220F/TO-220F1
PD
47
W
TO-3P
240
Junction Temperature
Storage Temperature
TJ
TSTG
+150
-55~+150
°C
°C
Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
2. Repetitive Rating: Pulse width limited by maximum junction temperature
3. L=28mH, IAS=5A, VDD= 50V, RG=25Ω, Starting TJ=25°C
4. ISD ≤5.4A, di/dt ≤200A/μs, VDD ≤BVDSS, Starting TJ=25°C
THERMAL DATA
PARAMETER
TO-220/TO-220F
Junction to Ambient
TO-220F1/TO-262
TO-263
TO-3P
TO-220/TO-262
Junction to Case
TO-263
TO-220F/TO-220F1
TO-3P
SYMBOL
θJA
θJC
RATINGS
62.5
40
1
3.66
0.52
UNIT
°C/W
°C/W
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
3 of 7
QW-R502-499.H
3Pages 5N90
TEST CIRCUITS AND WAVEFORMS(Cont.)
Power MOSFET
3mA
12V
200nF
50kΩ
VGS
300nF
Same Type
as DUT
DUT
Gate Charge Test Circuit
VGS
10V
VDS
QGS
QG
QGD
Charge
Gate Charge Waveforms
10V
tP
VDS
RG ID
L
DUT
VDD
Unclamped Inductive Switching Test Circuit
BVDSS
IAS
VDD
EAS=
1
2
LIAS2
BVDSS
BVDSS-VDD
ID(t)
VDS(t)
tP Time
Unclamped Inductive Switching Waveforms
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
6 of 7
QW-R502-499.H
6 Page | |||
ページ | 合計 : 7 ページ | ||
|
PDF ダウンロード | [ 5N90 データシート.PDF ] |
データシートを活用すると、その部品の主な機能と仕様を詳しく理解できます。 ピン構成、電気的特性、動作パラメータ、性能を確認してください。 |
部品番号 | 部品説明 | メーカ |
5N90 | N-Channel MOSFET Transistor | Inchange Semiconductor |
5N90 | N-Channel Power MOSFET / Transistor | nELL |
5N90 | FQA5N90 | Fairchild Semiconductor |
5N90 | N-CHANNEL POWER MOSFET | Unisonic Technologies |