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Número de pieza | 1N65A | |
Descripción | N-CHANNEL POWER MOSFET | |
Fabricantes | Unisonic Technologies | |
Logotipo | ||
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No Preview Available ! UNISONIC TECHNOLOGIES CO., LTD
1N65A
0.5A, 650V N-CHANNEL
POWER MOSFET
DESCRIPTION
The UTC 1N65A is a high voltage power MOSFET designed to
have better characteristics, such as fast switching time, low gate
charge, low on-state resistance and high rugged avalanche
characteristics. This power MOSFET is usually used in high speed
switching applications at power supplies, PWM motor controls, high
efficient DC to DC converters and bridge circuits.
FEATURES
* RDS(ON) <15.5Ω@ VGS = 10V, ID = 0.5A
* Ultra Low gate charge (typical 8.0nC)
* Low reverse transfer capacitance (CRSS = 3.0 pF(max))
* Fast switching capability
* Avalanche energy specified
* Improved dv/dt capability, high ruggedness
SYMBOL
2.Drain
Power MOSFET
1.Gate
3.Source
ORDERING INFORMATION
Ordering Number
Lead Free
Halogen Free
- 1N65AG-AA3-R
1N65AL-T92-B
1N65AG-T92-B
1N65AL-T92-K
1N65AG-T92-K
Note: Pin Assignment: G: Gate D: Drain S: Source
Package
SOT-223
TO-92
TO-92
Pin Assignment
12
3
GD
S
GD
S
GD
S
Packing
Tape Reel
Tape Box
Bulk
1N65AG-AA3-R
(1)Packing Type
(2)Package Type
(3)Green Package
(1) B: Tape Box, K: Bulk, R: Tape Reel
(2) AA3: SOT-223, T92: TO-92
(3) G: Halogen Free and Lead Free, L: Lead Free
www.unisonic.com.tw
Copyright © 2014 Unisonic Technologies Co., Ltd
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1 page 1N65A
TEST CIRCUITS AND WAVEFORMS
D.U.T.
+
-
+
VDS
-
L
Power MOSFET
RG
VGS
Same Type
as D.U.T.
Driver
* dv/dt controlled by RG
* ISD controlled by pulse period
* D.U.T.-Device Under Test
VDD
VGS
(Driver)
ISD
(D.U.T.)
VDS
(D.U.T.)
Peak Diode Recovery dv/dt Test Circuit
P.W.
Period
P. W.
D= Period
VGS= 10V
IFM, Body Diode Forward Current
di/dt
IRM
Body Diode Reverse Current
Body Diode Recovery dv/dt
VDD
Body Diode
Forward Voltage Drop
Peak Diode Recovery dv/dt Waveforms
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
5 of 9
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5 Page |
Páginas | Total 9 Páginas | |
PDF Descargar | [ Datasheet 1N65A.PDF ] |
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