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PDF 1N6264 Data sheet ( Hoja de datos )
| Número de pieza | 1N6264 | |
| Descripción | GaAs INFRARED EMITTING DIODE | |
| Fabricantes | Fairchild Semiconductor | |
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1N6264
GaAs INFRARED EMITTING DIODE
PACKAGE DIMENSIONS
0.209 (5.31)
0.184 (4.67)
0.030 (0.76)
NOM
0.255 (6.48)
FEATURES
• Good optical to mechanical alignment
• Mechanically and wavelength matched to the
TO-18 series phototransistor
• Hermetically sealed package
• High irradiance level
• (*) Indicates JEDEC registered values
1.00 (25.4)
MIN
ANODE
(CASE)
0.100 (2.54)
0.050 (1.27)
0.040 (1.02)
0.040 (1.02)
NOTES:
13
45°
Ø0.020 (0.51) 2X
1. Dimensions for all drawings are in inches (mm).
2. Tolerance of ± .010 (.25) on all non-nominal dimensions
unless otherwise specified.
DESCRIPTION
• The 1N6264 is a 940 nm LED in a
narrow angle, TO-46 package.
SCHEMATIC
ANODE
(Connected
To Case)
CATHODE
3
1
1. Derate power dissipation linearly 1.70 mW/°C above 25°C ambient.
2. Derate power dissipation linearly 13.0 mW/°C above 25°C case.
3. RMA flux is recommended.
4. Methanol or isopropyl alcohols are recommended as cleaning
agents.
5. Soldering iron tip 1/16” (1.6mm) minimum from housing.
6. As long as leads are not under any stress or spring tension
7. Total power output, PO, is the total power radiated by the device into
a solid angle of 2 H steradians.
ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise specified)
Parameter
* Operating Temperature
* Storage Temperature
* Soldering Temperature (Iron)(3,4,5 and 6)
* Soldering Temperature (Flow)(3,4 and 6)
* Continuous Forward Current
* Forward Current (pw, 1µs; 200Hz)
* Reverse Voltage
* Power Dissipation (TA = 25°C)(1)
Power Dissipation (TC = 25°C)(2)
Symbol
TOPR
TSTG
TSOL-I
TSOL-F
IF
IF
VR
PD
PD
Rating
-65 to +125
-65 to +150
240 for 5 sec
260 for 10 sec
100
10
3
170
1.3
Unit
°C
°C
°C
°C
mA
A
V
mW
W
ELECTRICAL / OPTICAL CHARACTERISTICS (TA =25°C) (All measurements made under pulse conditions)
PARAMETER
* Peak Emission Wavelength
Emission Angle at 1/2 Power
* Forward Voltage
* Reverse Leakage Current
* Total Power
Rise Time 0-90% of output
Fall Time 100-10% of output
TEST CONDITIONS
IF = 100 mA
IF = 100 mA
IF = 100 mA
VR = 3 V
IF = 100 mA
SYMBOL
DP
0
VF1
IR
PO
tr
tf
MIN
935
—
—
—
6
—
—
TYP MAX
— 955
±8 —
— 1.7
— 10
——
1.0 —
1.0 —
UNITS
nm
Deg.
V
µA
mW
µs
µs
2001 Fairchild Semiconductor Corporation
DS300276 3/2/01
1 OF 3
www.fairchildsemi.com
1 page | ||
| Páginas | Total 3 Páginas | |
| PDF Descargar | [ Datasheet 1N6264.PDF ] | |
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