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1N40AのメーカーはUnisonic Technologiesです、この部品の機能は「N-CHANNEL POWER MOSFET」です。 |
部品番号 | 1N40A |
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部品説明 | N-CHANNEL POWER MOSFET | ||
メーカ | Unisonic Technologies | ||
ロゴ | |||
このページの下部にプレビューと1N40Aダウンロード(pdfファイル)リンクがあります。 Total 5 pages
UNISONIC TECHNOLOGIES CO., LTD
1N40A
Preliminary
1A, 400V N-CHANNEL
POWER MOSFET
DESCRIPTION
The UTC 1N40A is an N-channel mode power MOSFET using
UTC’ s advanced technology to provide customers with planar stripe
and DMOS technology. This technology is specialized in allowing a
minimum on-state resistance and superior switching performance. It
also can withstand high energy pulse in the avalanche and
commutation mode.
The UTC 1N40A is universally applied in electronic lamp ballast
based on half bridge topology and high efficient switched mode
power supply.
FEATURES
* High switching speed
* RDS(ON) < 6.8Ω @ VGS = 10V, ID = 0.5A
* 100% avalanche tested
SYMBOL
2.Drain
Power MOSFET
1.Gate
3.Source
ORDERING INFORMATION
Ordering Number
Lead Free
Halogen Free
- 1N40AG-AA3-R
1N40AL-TM3-T
1N40AG-TM3-T
Note: Pin Assignment: G: Gate D: Drain S: Source
Package
SOT-223
TO-251
Pin Assignment
123
GDS
GDS
1N40AG-TA3-R
(1)Packing Type
(1) T: Tubel, R: Tape Reel
(2)Package Type
(2) AA3: SOT-223, TM3: TO-251
Packing
Tape Reel
Tube
(3)Green Package
(3) L: Lead Free, G: Halogen Free and Lead Free
www.unisonic.com.tw
Copyright © 2015 Unisonic Technologies Co., Ltd
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1 Page 1N40A
Preliminary
Power MOSFET
ABSOLUTE MAXIMUM RATINGS (TC=25°C, unless otherwise specified)
PARAMETER
SYMBOL
RATINGS
UNIT
Drain-Source Voltage
VDSS
400 V
Gate-Source Voltage
Drain Current
Avalanche Energy
Continuous (TC=25°C)
Pulsed (Note 2)
Single Pulsed (Note 3)
VGSS
ID
IDM
EAS
±30 V
1A
4A
40 mJ
Peak Diode Recovery dv/dt (Note 4)
dv/dt
4.5 V/ns
Power Dissipation
SOT-223
TO-251
PD
1W
25 W
Derate above 25°C
SOT-223
TO-251
PD
125 W/°C
0.2 W/°C
Junction Temperature
TJ
+150
°C
Storage Temperature
TSTG
-55~+150
°C
Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
2. Repetitive Rating: Pulse width limited by maximum junction temperature
3. L = 80mH, IAS = 1A, VDD = 50V, RG = 25Ω, Starting TJ = 25°C
4. ISD ≤ 1.8A, di/dt ≤ 200A/µs, VDD ≤ BVDSS, Starting TJ = 25°C
THERMAL DATA
PARAMETER
Junction to Ambient
SOT-223
TO-251
Junction to Case
SOT-223
TO-251
SYMBOL
θJA
θJC
RATINGS
150
110
125
5
UNIT
°C/W
°C/W
°C/W
°C/W
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
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ページ | 合計 : 5 ページ | ||
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PDF ダウンロード | [ 1N40A データシート.PDF ] |
データシートを活用すると、その部品の主な機能と仕様を詳しく理解できます。 ピン構成、電気的特性、動作パラメータ、性能を確認してください。 |
部品番号 | 部品説明 | メーカ |
1N40 | N-CHANNEL POWER MOSFET | Unisonic Technologies |
1N40 | Diode ( Rectifier ) | American Microsemiconductor |
1N4000 | 10 WATT ZENER DIODES | Microsemi Corporation |
1N4000 | Zener Diode ( Rectifier ) | SOLID STATE |