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PDF BTA25H-800CW3G Data sheet ( Hoja de datos )
| Número de pieza | BTA25H-800CW3G | |
| Descripción | Triacs | |
| Fabricantes | ON Semiconductor | |
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BTA25H-600CW3G,
BTA25H-800CW3G
Triacs
Silicon Bidirectional Thyristors
Designed for high performance full-wave ac control applications
where high noise immunity and high commutating di/dt are required.
Features
• Blocking Voltage to 800 Volts
• On-State Current Rating of 25 Amperes RMS at 95°C
• Uniform Gate Trigger Currents in Three Quadrants
• High Immunity to dV/dt − 500 V/ms minimum at 150°C
• Minimizes Snubber Networks for Protection
• Industry Standard TO-220AB Package − Internally Isolated
• High Commutating dI/dt − 4.0 A/ms minimum at 150°C
• Internally Isolated (2500 VRMS)
• These are Pb−Free Devices
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)
Rating
Symbol
Value
Unit
Peak Repetitive Off−State Voltage (Note 1)
(TJ = −40 to 150°C, Sine Wave,
50 to 60 Hz, Gate Open)
BTA25H−600CW3G
BTA25H−800CW3G
VDRM,
VRRM
600
800
V
On-State RMS Current (Full Cycle Sine
Wave, 60 Hz, TC = 95°C)
IT(RMS)
25
A
Peak Non-Repetitive Surge Current
(One Full Cycle Sine Wave, 60 Hz,
TC = 25°C)
Circuit Fusing Consideration (t = 8.3 ms)
ITSM
I2t
250 A
260 A2sec
Non−Repetitive Surge Peak Off−State
Voltage (TJ = 25°C, t = 8.3 ms)
VDSM/
VRSM
VDRM/VRRM
+100
V
Peak Gate Current (TJ = 150°C, t ≤ 20 ms) IGM 4.0 A
Average Gate Power (TJ = 150°C)
PG(AV)
0.5
W
Operating Junction Temperature Range
TJ −40 to +150 °C
Storage Temperature Range
Tstg −40 to +150 °C
RMS Isolation Voltage
(t = 300 ms, R.H. ≤ 30%, TA = 25°C)
Viso 2500 V
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. VDRM and VRRM for all types can be applied on a continuous basis. Blocking
voltages shall not be tested with a constant current source such that the
voltage ratings of the devices are exceeded.
http://onsemi.com
TRIACS
25 AMPERES RMS
600 thru 800 VOLTS
MT2
MT1
G
4 MARKING
DIAGRAM
123
TO−220AB
CASE 221A
STYLE 12
x = 6 or 8
A = Assembly Location
Y = Year
WW = Work Week
G = Pb−Free Package
HT
BTA25−xCWG
AYWW
PIN ASSIGNMENT
1 Main Terminal 1
2 Main Terminal 2
3 Gate
4 No Connection
ORDERING INFORMATION
Device
BTA25H−600CW3G
Package
TO−220AB
(Pb−Free)
Shipping
50 Units / Rail
BTA25H−800CW3G TO−220AB 50 Units / Rail
(Pb−Free)
*For additional information on our Pb−Free strategy and
soldering details, please download the ON Semicon-
ductor Soldering and Mounting Techniques Reference
Manual, SOLDERRM/D.
© Semiconductor Components Industries, LLC, 2009
September, 2009 − Rev. 0
1
Publication Order Number:
BTA25H−600CW3/D
1 page  
BTA25H−600CW3G, BTA25H−800CW3G
Symbol
VDRM
IDRM
VRRM
IRRM
VTM
IH
Voltage Current Characteristic of Triacs
(Bidirectional Device)
+ Current
Parameter
Peak Repetitive Forward Off State Voltage
Peak Forward Blocking Current
Peak Repetitive Reverse Off State Voltage
Peak Reverse Blocking Current
Maximum On State Voltage
Holding Current
IRRM at VRRM
on state
IH
Quadrant 3
MainTerminal 2 −
VTM
VTM
IH
off state
Quadrant 1
MainTerminal 2 +
+ Voltage
IDRM at VDRM
Quadrant Definitions for a Triac
MT2 POSITIVE
(Positive Half Cycle)
+
(+) MT2
(+) MT2
Quadrant II
IGT −
(−) IGT
GATE
MT1
REF
(−) MT2
(+) IGT
GATE
MT1
REF
(−) MT2
Quadrant I
+ IGT
Quadrant III
(−) IGT
GATE
MT1
REF
(+) IGT
GATE
MT1
REF
Quadrant IV
−
MT2 NEGATIVE
(Negative Half Cycle)
All polarities are referenced to MT1.
With in−phase signals (using standard AC lines) quadrants I and III are used.
http://onsemi.com
5
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| PDF Descargar | [ Datasheet BTA25H-800CW3G.PDF ] | |
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