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IRL6297SDPBF の電気的特性と機能

IRL6297SDPBFのメーカーはInternational Rectifierです、この部品の機能は「Power MOSFET ( Transistor )」です。


製品の詳細 ( Datasheet PDF )

部品番号 IRL6297SDPBF
部品説明 Power MOSFET ( Transistor )
メーカ International Rectifier
ロゴ International Rectifier ロゴ 




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IRL6297SDPBF Datasheet, IRL6297SDPBF PDF,ピン配置, 機能
IRL6297SDPbF
DirectFET® Dual N-Channel Power MOSFET ‚
Applications
l Charge and Discharge Switch for Battery Application
l Isolation Switch for Input Power or Battery Application
Typical values (unless otherwise specified)
VDSS
VGS
RDS(on)
RDS(on)
20V max ±12V max 3.8m@4.5V 5.4m@2.5V
Features and Benefits
l Environmentaly Friendly Product
Qg tot
27nC
Qgd
9.5nC
Qgs2
1.4nC
Qrr
21nC
Qoss
15nC
Vgs(th)
0.80V
l RoHs Compliant, Halogen Free
l Dual Common-Drain N-Channel MOSFETs Provides
High Level of Integration and Very Low RDS(on)
GG
DD
SS
Applicable DirectFET Outline and Substrate Outline (see p.7,8 for details)
SA
DirectFET® ISOMETRIC
SQ SX ST SA MQ MX MT MP MC
Description
The IRL6297SDPbF combines the latest HEXFET® N-Channel Power MOSFET Silicon technology with the advanced DirectFET®
packaging to achieve the lowest on-state resistance in a package that has the footprint smaller than an SO-8 and only 0.6 mm profile. The
DirectFET® package is compatible with existing layout geometries used in power applications, PCB assembly equipment and vapor phase,
infra-red or convection soldering techniques, when application note AN-1035 is followed regarding the manufacturing methods and
processes. The DirectFET® package allows dual sided cooling to maximize thermal transfer in power systems, improving previous best
thermal resistance by 80%.
Base Part Number
IRL6297SDPbF
Package Type
DirectFET Small Can
Standard Pack
Form
Quantity
Tape and Reel
4800
Orderable part number
IRL6297SDTRPbF
Absolute Maximum Ratings
Parameter
VDS Drain-to-Source Voltage
VGS
ID @ TA = 25°C
ID @ TA = 70°C
ID @ TC = 25°C
IDM
Gate-to-Source Voltage
eContinuous Drain Current, VGS @ 10V
eContinuous Drain Current, VGS @ 10V
fContinuous Drain Current, VGS @ 10V
gPulsed Drain Current
Max.
20
±12
15
12
58
140
Units
V
A
20
ID = 15A
15
10
5 TJ = 125°C
TJ = 25°C
0
0 1 2 3 4 5 6 7 8 9 10 11 12
VGS, Gate -to -Source Voltage (V)
Fig 1. Typical On-Resistance vs. Gate Voltage
Notes:
 Click on this section to link to the appropriate technical paper.
‚ Click on this section to link to the DirectFET Website.
ƒ Surface mounted on 1 in. square Cu board, steady state.
14.0
12.0
10.0
8.0
ID= 12A
VDS= 16V
VDS= 10V
VDS= 4.0V
6.0
4.0
2.0
0.0
0
10 20 30 40 50 60 70
QG Total Gate Charge (nC)
Fig 2. Typical Total Gate Charge vs Gate-to-Source Voltage
„ TC measured with thermocouple mounted to top (Drain) of part.
… Repetitive rating; pulse width limited by max. junction temperature.
1 www.irf.com © 2013 International Rectifier
September 5, 2013

1 Page





IRL6297SDPBF pdf, ピン配列
IRL6297SDPbF
Absolute Maximum Ratings
PD @TA = 25°C
PD @TA = 70°C
PD @TC = 25°C
ePower Dissipation
ePower Dissipation
fPower Dissipation
Parameter
TP Peak Soldering Temperature
TJ Operating Junction and
TSTG
Storage Temperature Range
Thermal Resistance
RθJA
RθJA
RθJA
RθJC
RθJ-PCB
Parameter
eJunction-to-Ambient
iJunction-to-Ambient
jJunction-to-Ambient
f kJunction-to-Case ,
Junction-to-PCB Mounted
eLinear Derating Factor
100
D = 0.50
10
0.20
0.10
0.05
0.02
1 0.01
0.1
Max.
1.7
1.1
25
270
-40 to + 150
Typ.
–––
12.5
20
–––
1.0
0.014
Max.
72
–––
–––
5.1
–––
Units
W
°C
Units
°C/W
W/°C
0.01
0.001
1E-006
SINGLE PULSE
( THERMAL RESPONSE )
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthja + Tc
1E-005 0.0001
0.001
0.01
0.1
1
t1 , Rectangular Pulse Duration (sec)
10 100 1000
Fig 3. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient 
Notes:
‡ Used double sided cooling, mounting pad with large heatsink.
ˆ Mounted on minimum footprint full size board with metalized
back and with small clip heatsink.
‰ Rθ is measured at TJ of approximately 90°C.
ƒ Surface mounted on 1 in. square Cu
board (still air).
‰ Mounted on minimum footprint full size
‰ Mounted to a PCB with small board with metalized back and with small
clip heatsink (still air)
clip heatsink (still air)
3 www.irf.com © 2013 International Rectifier
September 5, 2013


3Pages


IRL6297SDPBF 電子部品, 半導体
IRL6297SDPbF
L
VVDCDC
DUT
0
210K S
Fig 15a. Gate Charge Test Circuit
Id
Vgs
Vds
Vgs(th)
Qgodr
Qgd Qgs2 Qgs1
Fig 15b. Gate Charge Waveform
15V
VDS
L
DRIVER
RG
20V
tp
D.U.T
IAS
0.01
+
-
VDD
A
Fig 16a. Unclamped Inductive Test Circuit
V(BR)DSS
tp
IAS
Fig 16b. Unclamped Inductive Waveforms
VDS
VGS
RG
V1G0SV
Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1 %
RD
D.U.T.
+
-
VDD
Fig 17a. Switching Time Test Circuit
6 www.irf.com © 2013 International Rectifier
VGS
10%
td(on) tr
90%
VDS
td(off) tf
Fig 17b. Switching Time Waveforms
September 5, 2013

6 Page



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部品番号部品説明メーカ
IRL6297SDPBF

Power MOSFET ( Transistor )

International Rectifier
International Rectifier


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