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IRL6297SDPBFのメーカーはInternational Rectifierです、この部品の機能は「Power MOSFET ( Transistor )」です。 |
部品番号 | IRL6297SDPBF |
| |
部品説明 | Power MOSFET ( Transistor ) | ||
メーカ | International Rectifier | ||
ロゴ | |||
このページの下部にプレビューとIRL6297SDPBFダウンロード(pdfファイル)リンクがあります。 Total 9 pages
IRL6297SDPbF
DirectFET® Dual N-Channel Power MOSFET
Applications
l Charge and Discharge Switch for Battery Application
l Isolation Switch for Input Power or Battery Application
Typical values (unless otherwise specified)
VDSS
VGS
RDS(on)
RDS(on)
20V max ±12V max 3.8mΩ@4.5V 5.4mΩ@2.5V
Features and Benefits
l Environmentaly Friendly Product
Qg tot
27nC
Qgd
9.5nC
Qgs2
1.4nC
Qrr
21nC
Qoss
15nC
Vgs(th)
0.80V
l RoHs Compliant, Halogen Free
l Dual Common-Drain N-Channel MOSFETs Provides
High Level of Integration and Very Low RDS(on)
GG
DD
SS
Applicable DirectFET Outline and Substrate Outline (see p.7,8 for details)
SA
DirectFET® ISOMETRIC
SQ SX ST SA MQ MX MT MP MC
Description
The IRL6297SDPbF combines the latest HEXFET® N-Channel Power MOSFET Silicon technology with the advanced DirectFET®
packaging to achieve the lowest on-state resistance in a package that has the footprint smaller than an SO-8 and only 0.6 mm profile. The
DirectFET® package is compatible with existing layout geometries used in power applications, PCB assembly equipment and vapor phase,
infra-red or convection soldering techniques, when application note AN-1035 is followed regarding the manufacturing methods and
processes. The DirectFET® package allows dual sided cooling to maximize thermal transfer in power systems, improving previous best
thermal resistance by 80%.
Base Part Number
IRL6297SDPbF
Package Type
DirectFET Small Can
Standard Pack
Form
Quantity
Tape and Reel
4800
Orderable part number
IRL6297SDTRPbF
Absolute Maximum Ratings
Parameter
VDS Drain-to-Source Voltage
VGS
ID @ TA = 25°C
ID @ TA = 70°C
ID @ TC = 25°C
IDM
Gate-to-Source Voltage
eContinuous Drain Current, VGS @ 10V
eContinuous Drain Current, VGS @ 10V
fContinuous Drain Current, VGS @ 10V
gPulsed Drain Current
Max.
20
±12
15
12
58
140
Units
V
A
20
ID = 15A
15
10
5 TJ = 125°C
TJ = 25°C
0
0 1 2 3 4 5 6 7 8 9 10 11 12
VGS, Gate -to -Source Voltage (V)
Fig 1. Typical On-Resistance vs. Gate Voltage
Notes:
Click on this section to link to the appropriate technical paper.
Click on this section to link to the DirectFET Website.
Surface mounted on 1 in. square Cu board, steady state.
14.0
12.0
10.0
8.0
ID= 12A
VDS= 16V
VDS= 10V
VDS= 4.0V
6.0
4.0
2.0
0.0
0
10 20 30 40 50 60 70
QG Total Gate Charge (nC)
Fig 2. Typical Total Gate Charge vs Gate-to-Source Voltage
TC measured with thermocouple mounted to top (Drain) of part.
Repetitive rating; pulse width limited by max. junction temperature.
1 www.irf.com © 2013 International Rectifier
September 5, 2013
1 Page IRL6297SDPbF
Absolute Maximum Ratings
PD @TA = 25°C
PD @TA = 70°C
PD @TC = 25°C
ePower Dissipation
ePower Dissipation
fPower Dissipation
Parameter
TP Peak Soldering Temperature
TJ Operating Junction and
TSTG
Storage Temperature Range
Thermal Resistance
RθJA
RθJA
RθJA
RθJC
RθJ-PCB
Parameter
eJunction-to-Ambient
iJunction-to-Ambient
jJunction-to-Ambient
f kJunction-to-Case ,
Junction-to-PCB Mounted
eLinear Derating Factor
100
D = 0.50
10
0.20
0.10
0.05
0.02
1 0.01
0.1
Max.
1.7
1.1
25
270
-40 to + 150
Typ.
–––
12.5
20
–––
1.0
0.014
Max.
72
–––
–––
5.1
–––
Units
W
°C
Units
°C/W
W/°C
0.01
0.001
1E-006
SINGLE PULSE
( THERMAL RESPONSE )
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthja + Tc
1E-005 0.0001
0.001
0.01
0.1
1
t1 , Rectangular Pulse Duration (sec)
10 100 1000
Fig 3. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient
Notes:
Used double sided cooling, mounting pad with large heatsink.
Mounted on minimum footprint full size board with metalized
back and with small clip heatsink.
Rθ is measured at TJ of approximately 90°C.
Surface mounted on 1 in. square Cu
board (still air).
Mounted on minimum footprint full size
Mounted to a PCB with small board with metalized back and with small
clip heatsink (still air)
clip heatsink (still air)
3 www.irf.com © 2013 International Rectifier
September 5, 2013
3Pages IRL6297SDPbF
L
VVDCDC
DUT
0
210K S
Fig 15a. Gate Charge Test Circuit
Id
Vgs
Vds
Vgs(th)
Qgodr
Qgd Qgs2 Qgs1
Fig 15b. Gate Charge Waveform
15V
VDS
L
DRIVER
RG
20V
tp
D.U.T
IAS
0.01Ω
+
-
VDD
A
Fig 16a. Unclamped Inductive Test Circuit
V(BR)DSS
tp
IAS
Fig 16b. Unclamped Inductive Waveforms
VDS
VGS
RG
V1G0SV
Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1 %
RD
D.U.T.
+
-
VDD
Fig 17a. Switching Time Test Circuit
6 www.irf.com © 2013 International Rectifier
VGS
10%
td(on) tr
90%
VDS
td(off) tf
Fig 17b. Switching Time Waveforms
September 5, 2013
6 Page | |||
ページ | 合計 : 9 ページ | ||
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部品番号 | 部品説明 | メーカ |
IRL6297SDPBF | Power MOSFET ( Transistor ) | International Rectifier |