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Número de pieza | IRL40B215 | |
Descripción | Power MOSFET ( Transistor ) | |
Fabricantes | International Rectifier | |
Logotipo | ||
Hay una vista previa y un enlace de descarga de IRL40B215 (archivo pdf) en la parte inferior de esta página. Total 10 Páginas | ||
No Preview Available ! Application
Brushed Motor drive applications
BLDC Motor drive applications
Battery powered circuits
Half-bridge and full-bridge topologies
Synchronous rectifier applications
Resonant mode power supplies
OR-ing and redundant power switches
DC/DC and AC/DC converters
DC/AC Inverters
StrongIRFET™
IRL40B215
HEXFET® Power MOSFET
D VDSS
40V
RDS(on) typ.
2.2m
max
2.7m
G
ID (Silicon Limited)
164A
IS D (Package Limited)
120A
Benefits
Optimized for Logic Level Drive
Improved Gate, Avalanche and Dynamic dV/dt Ruggedness
Fully Characterized Capacitance and Avalanche SOA
Enhanced body diode dV/dt and dI/dt Capability
Lead-Free*
RoHS Compliant, Halogen-Free
G
Gate
GDS
TO-220AB
IRL40B215
D
Drain
S
Source
Base part number
IRL40B215
Package Type
TO-220
Standard Pack
Form
Quantity
Tube
50
Orderable Part Number
IRL40B215
12
ID = 98A
9
6
TJ = 125°C
3
TJ = 25°C
0
2 4 6 8 10 12 14 16 18 20
VGS, Gate -to -Source Voltage (V)
Fig 1. Typical On-Resistance vs. Gate Voltage
1 www.irf.com © 2015 International Rectifier
175
150
125
100
75
50
25
0
25
Limited By Package
50 75 100 125 150
TC , Case Temperature (°C)
175
Fig 2. Maximum Drain Current vs. Case Temperature
Submit Datasheet Feedback
April 27, 2015
1 page 1000
TJ = 175°C
100
10 TJ = 25°C
1
0.1
0.0
VGS = 0V
0.5 1.0 1.5 2.0 2.5 3.0
VSD, Source-to-Drain Voltage (V)
3.5
Fig 9. Typical Source-Drain Diode Forward Voltage
52
Id = 5.0mA
50
48
46
44
42
40
-60
-20 20 60 100 140
TJ , Temperature ( °C )
180
Fig 11. Drain-to-Source Breakdown Voltage
9
VGS = 3.5V
VGS = 4.0V
VGS = 4.5V
7 VGS = 8.0V
VGS = 10V
5
IRL40B215
1000
OPERATION IN THIS AREA
LIMITED BY R DS(on)
100
Limited By Package
10
100µsec
1msec
10msec
1
Tc = 25°C
Tj = 175°C
Single Pulse
0.1
0.1
1
DC
10
VDS, Drain-toSource Voltage (V)
Fig 10. Maximum Safe Operating Area
0.60
0.50
0.40
0.30
0.20
0.10
0.00
-5 0 5 10 15 20 25 30 35 40 45
VDS, Drain-to-Source Voltage (V)
Fig 12. Typical Coss Stored Energy
3
5 www.irf.com
1
0 50 100 150 200
ID, Drain Current (A)
Fig 13. Typical On-Resistance vs. Drain Current
© 2015 International Rectifier
Submit Datasheet Feedback
April 27, 2015
5 Page |
Páginas | Total 10 Páginas | |
PDF Descargar | [ Datasheet IRL40B215.PDF ] |
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