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IRL40B209 の電気的特性と機能

IRL40B209のメーカーはInternational Rectifierです、この部品の機能は「Power MOSFET ( Transistor )」です。


製品の詳細 ( Datasheet PDF )

部品番号 IRL40B209
部品説明 Power MOSFET ( Transistor )
メーカ International Rectifier
ロゴ International Rectifier ロゴ 




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IRL40B209 Datasheet, IRL40B209 PDF,ピン配置, 機能
Application
Brushed Motor drive applications
BLDC Motor drive applications
Battery powered circuits
Half-bridge and full-bridge topologies
Synchronous rectifier applications
Resonant mode power supplies
OR-ing and redundant power switches
DC/DC and AC/DC converters
DC/AC Inverters
StrongIRFET™
IRL40B209
HEXFET® Power MOSFET
  D VDSS
40V
RDS(on) typ.
1.0m
max
1.25m
G
ID (Silicon Limited)
414A
S ID (Package Limited) 195A
Benefits
Optimized for Logic Level Drive
Improved Gate, Avalanche and Dynamic dV/dt Ruggedness
Fully Characterized Capacitance and Avalanche SOA
Enhanced body diode dV/dt and dI/dt Capability
Lead-Free
RoHS Compliant, Halogen-Free
G
Gate
GDS
TO-220AB
IRL40B209
D
Drain
S
Source
Base part number
IRL40B209
Package Type
TO-220
Standard Pack
Form
Quantity
Tube
50
Orderable Part Number
IRL40B209
6
ID = 100A
5
4
3
2 TJ = 125°C
1
TJ = 25°C
0
2 4 6 8 10 12 14 16 18 20
VGS, Gate -to -Source Voltage (V)
Fig 1. Typical On-Resistance vs. Gate Voltage
1 www.irf.com © 2015 International Rectifier
450
400
350
300
250
200
150
100
50
0
25
Limited By Package
50 75 100 125 150
TC , Case Temperature (°C)
175
Fig 2. Maximum Drain Current vs. Case Temperature
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May 18, 2015

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IRL40B209 pdf, ピン配列
  IRL40B209
Dynamic Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Symbol
Parameter
Min. Typ. Max. Units
Conditions
gfs
Qg
Qgs
Qgd
Qsync
td(on)
tr
td(off)
tf
Forward Transconductance
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain Charge
Total Gate Charge Sync. (Qg – Qgd)
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
270 ––– ––– S VDS = 10V, ID =100A
––– 180 270
ID = 100A
–––
–––
51
88
–––
–––
nC
 VVDGSS
=
=
20V
4.5V
––– 92 –––
––– 56 –––
VDD = 20V
–––
–––
198
188
–––
–––
ns
ID = 30A
RG= 2.7
––– 150 –––
VGS = 4.5V
Ciss Input Capacitance
Coss Output Capacitance
Crss Reverse Transfer Capacitance
––– 15140 –––
––– 1990 –––
––– 1370 –––
VGS = 0V
VDS = 25V
pF   ƒ = 1.0MHz, See Fig.7
Coss eff.(ER) Effective Output Capacitance
––– 2340 –––
VGS = 0V, VDS = 0V to 32V
Coss eff.(TR) Output Capacitance (Time Related)
Diode Characteristics  
Symbol
IS
ISM
Parameter
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode)
VSD
dv/dt
Diode Forward Voltage
Peak Diode Recovery dv/dt
trr Reverse Recovery Time
Qrr Reverse Recovery Charge
IRRM Reverse Recovery Current
––– 2900 –––
VGS = 0V, VDS = 0V to 32V
Min.
–––
–––
–––
–––
–––
–––
–––
–––
–––
Typ.
–––
–––
–––
2.4
41
42
46
50
2.0
Max. Units
Conditions
414
1707
A
MOSFET symbol
showing the
integral reverse G
p-n junction diode.
D
S
1.2 V TJ = 25°C,IS = 100A,VGS = 0V 
––– V/ns TJ = 175°C,IS = 100A,VDS = 40V
––– ns TJ = 25°C
––– TJ = 125°C
VDD = 34V
IF = 100A,
–––
–––
nC
TJ = 25°C
TJ = 125°C
di/dt = 100A/µs 
 
––– A TJ = 25°C
3 www.irf.com © 2015 International Rectifier
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IRL40B209 電子部品, 半導体
 
1
0.1
0.01
D = 0.50
0.20
0.10
0.05
0.02
0.01
IRL40B209
0.001
0.0001
1E-006
SINGLE PULSE
( THERMAL RESPONSE )
1E-005
0.0001
0.001
t1 , Rectangular Pulse Duration (sec)
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthjc + Tc
0.01
0.1
Fig 14. Maximum Effective Transient Thermal Impedance, Junction-to-Case
1000
Allowed avalanche Current vs avalanche
pulsewidth, tav, assuming Tj = 150°C and
Tstart =25°C (Single Pulse)
100
10
Allowed avalanche Current vs avalanche
pulsewidth, tav, assuming j = 25°C and
Tstart = 150°C.
1
1.0E-06
1.0E-05
1.0E-04
tav (sec)
1.0E-03
1.0E-02
Fig 15. Avalanche Current vs. Pulse Width
800
TOP
Single Pulse
700 BOTTOM 1.0% Duty Cycle
ID = 100A
600
500
400
300
200
100
0
25 50 75 100 125 150 175
Starting TJ , Junction Temperature (°C)
Fig 16. Maximum Avalanche Energy vs. Temperature
Notes on Repetitive Avalanche Curves , Figures 15, 16:
(For further info, see AN-1005 at www.irf.com)
1.Avalanche failures assumption:
Purely a thermal phenomenon and failure occurs at a
temperature far in excess of Tjmax. This is validated for every
part type.
2. Safe operation in Avalanche is allowed as long as Tjmax is not
exceeded.
3. Equation below based on circuit and waveforms shown in Figures
23a, 23b.
4. PD (ave) = Average power dissipation per single avalanche pulse.
5. BV = Rated breakdown voltage (1.3 factor accounts for voltage
increase during avalanche).
6. Iav = Allowable avalanche current.
7. T = Allowable rise in junction temperature, not to exceed Tjmax
(assumed as 25°C in Figures14, 15).
tav = Average time in avalanche.
D = Duty cycle in avalanche = tav ·f
ZthJC(D, tav) = Transient thermal resistance, see Figure 14)
PD (ave) = 1/2 ( 1.3·BV·Iav) = T/ ZthJC
Iav = 2T/ [1.3·BV·Zth]
EAS (AR) = PD (ave)·tav  
6 www.irf.com © 2015 International Rectifier
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部品番号部品説明メーカ
IRL40B209

Power MOSFET ( Transistor )

International Rectifier
International Rectifier


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