IRGSL6B60KDPbF Datasheet PDF - International Rectifier
| Part Number | IRGSL6B60KDPbF | |
| Description | Insulated Gate Bipolar Transistor | |
| Manufacturers | International Rectifier | |
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There is a preview and IRGSL6B60KDPbF download ( pdf file ) link at the bottom of this page. Total 15 Pages | ||
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PD - 95229C
INSULATED GATE BIPOLAR TRANSISTOR WITH
ULTRAFAST SOFT RECOVERY DIODE
C
Features
• Low VCE (on) Non Punch Through IGBT Technology.
• Low Diode VF.
• 10μs Short Circuit Capability.
• Square RBSOA.
• Ultrasoft Diode Reverse Recovery Characteristics.
• Positive VCE (on) Temperature Coefficient.
• Lead-Free
G
E
n-channel
IRGB6B60KDPbF
IRGS6B60KDPbF
IRGSL6B60KDPbF
VCES = 600V
IC = 10A, TC=100°C
tsc > 10μs, TJ=150°C
VCE(on) typ. = 1.8V
Benefits
• Benchmark Efficiency for Motor Control.
• Rugged Transient Performance.
• Low EMI.
• Excellent Current Sharing in Parallel Operation.
Absolute Maximum Ratings
Parameter
VCES
IC @ TC = 25°C
IC @ TC = 100°C
ICM
ILM
IF @ TC = 25°C
IF @ TC = 100°C
IFM
VGE
PD @ TC = 25°C
PD @ TC = 100°C
TJ
TSTG
Collector-to-Emitter Voltage
Continuous Collector Current
Continuous Collector Current
Pulsed Collector Current
Clamped Inductive Load Current
Diode Continuous Forward Current
Diode Continuous Forward Current
Diode Maximum Forward Current
Gate-to-Emitter Voltage
Maximum Power Dissipation
Maximum Power Dissipation
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 sec.
Thermal Resistance
TO-220AB
D2Pak
TO-262
IRGB6B60KDPbF IRGS6B60KDPbF IRGSL6B60KDPbF
Max.
600
18
10
26
26
18
10
26
± 20
90
36
-55 to +150
300 (0.063 in. (1.6mm) from case)
Units
V
A
V
W
°C
RθJC
RθJC
RθCS
RθJA
RθJA
Wt
www.irf.com
Parameter
Junction-to-Case - IGBT
Junction-to-Case - Diode
Case-to-Sink, flat, greased surface
Junction-to-Ambient, typical socket mount
Junction-to-Ambient (PCB Mount, steady state)
Weight
Min.
–––
–––
–––
–––
–––
–––
Typ.
–––
–––
0.50
–––
–––
1.44
Max.
1.4
4.4
–––
62
40
–––
Units
°C/W
g
1
01/07/13
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IRGB/S/SL6B60KDPbF
20
18
16
14
12
10
8
6
4
2
0
5
ICE = 3.0A
ICE = 5.0A
ICE = 10A
10 15
VGE (V)
20
Fig. 9 - Typical VCE vs. VGE
TJ = -40°C
20
18
16
14
12
10
8
6
4
2
0
5
ICE = 3.0A
ICE = 5.0A
ICE = 10A
10 15
VGE (V)
20
Fig. 10 - Typical VCE vs. VGE
TJ = 25°C
20
18
16
14
12
10
8
6
4
2
0
5
ICE = 3.0A
ICE = 5.0A
ICE = 10A
10 15
VGE (V)
20
Fig. 11 - Typical VCE vs. VGE
TJ = 150°C
www.irf.com
40
35 TJ = 25°C
TJ = 150°C
30
25
20
15
10 TJ = 150°C
5
0
05
TJ = 25°C
10
VGE (V)
15
20
Fig. 12 - Typ. Transfer Characteristics
VCE = 50V; tp = 10μs
5
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Part DetailsOn this page, you can learn information such as the schematic, equivalent, pinout, replacement, circuit, and manual for IRGSL6B60KDPbF electronic component. |
| Information | Total 15 Pages | |
| Link URL | [ Copy URL to Clipboard ] | |
| Download | [ IRGSL6B60KDPbF.PDF Datasheet ] | |
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| Part Number | Description | MFRS |
| IRGSL6B60KDPbF | The function is Insulated Gate Bipolar Transistor. International Rectifier | |
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