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IRGS4B60KD1PBF の電気的特性と機能

IRGS4B60KD1PBFのメーカーはInternational Rectifierです、この部品の機能は「Insulated Gate Bipolar Transistor」です。


製品の詳細 ( Datasheet PDF )

部品番号 IRGS4B60KD1PBF
部品説明 Insulated Gate Bipolar Transistor
メーカ International Rectifier
ロゴ International Rectifier ロゴ 




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IRGS4B60KD1PBF Datasheet, IRGS4B60KD1PBF PDF,ピン配置, 機能
PD - 95616A
IRGB4B60KD1PbF
IRGS4B60KD1PbF
INSULATED GATE BIPOLAR TRANSISTOR WITH IRGSL4B60KD1PbF
ULTRAFAST SOFT RECOVERY DIODE
Features
C VCES = 600V
• Low VCE (on) Non Punch Through IGBT Technology.
• 10µs Short Circuit Capability.
• Square RBSOA.
• Positive VCE (on) Temperature Coefficient.
• Maximum Junction Temperature rated at 175°C.
• Lead-Free
G
E
n-channel
IC = 7.6A, TC=100°C
tsc > 10µs, TJ=150°C
VCE(on) typ. = 2.1V
Benefits
• Benchmark Efficiency for Motor Control.
• Rugged Transient Performance.
• Low EMI.
• Excellent Current Sharing in Parallel Operation.
Absolute Maximum Ratings
TO-220
D2Pak
TO-262
IRGB4B60KD1 IRGS4B60KD1 IRGSL4B60KD1
Parameter
Max.
Units
VCES
Collector-to-Emitter Voltage
IC @ TC = 25°C Continuous Collector Current
IC @ TC = 100°C Continuous Collector Current
cICM Pulse Collector Current (Ref.Fig.C.T.5)
ILM Clamped Inductive Load current
IF @ TC = 25°C Diode Continuous Forward Current
IF @ TC = 100°C Diode Continuous Forward Current
IFM Diode Maximum Forward Current
VGE Gate-to-Emitter Voltage
PD @ TC = 25°C Maximum Power Dissipation
PD @ TC = 100°C Maximum Power Dissipation
TJ Operating Junction and
TSTG
Storage Temperature Range
Storage Temperature Range, for 10 sec.
Thermal / Mechanical Characteristics
600
11
7.6
22
22
11
6.7
22
±20
63
31
-55 to +175
300 (0.063 in. (1.6mm) from case)
V
A
V
W
°C
Parameter
Min.
Typ.
Max. Units
RθJC
RθJC
RθCS
RθJA
RθJA
Wt
Junction-to-Case- IGBT
––– ––– 2.4 °C/W
Junction-to-Case- Diode
––– ––– 6.1
Case-to-Sink, flat, greased surface
––– 0.50 –––
Junction-to-Ambient
dJunction-to-Ambient (PCB Mount, steady state)
–––
–––
–––
–––
62
40
Weight
––– 1.44 ––– g
www.irf.com
1
8/30/04

1 Page





IRGS4B60KD1PBF pdf, ピン配列
IRGB/S/SL4B60KD1PbF
12
10
8
6
4
2
0
0 20 40 60 80 100 120 140 160 180
TC (°C)
Fig. 1 - Maximum DC Collector Current vs.
Case Temperature
70
60
50
40
30
20
10
0
0 20 40 60 80 100 120 140 160 180
TC (°C)
Fig. 2 - Power Dissipation vs. Case
Temperature
100
10
1
0.1
0.01
0
100µs
1ms
10ms
DC
1 10 100 1000 10000
VCE (V)
Fig. 3 - Forward SOA
TC = 25°C; TJ 150°C
www.irf.com
100
10
1
0
10
100 1000
VCE (V)
Fig. 4 - Reverse Bias SOA
TJ = 150°C; VGE =15V
3


3Pages


IRGS4B60KD1PBF 電子部品, 半導体
IRGB/S/SL4B60KD1PbF
350
300
250 EON
200
150
100 EOFF
50
0
1 2 3 4 5 6 7 8 9 10
IC (A)
Fig. 13 - Typ. Energy Loss vs. IC
TJ = 150°C; L=2.5mH; VCE= 400V,
RG= 100; VGE= 15V
350
300
250
200
150
100
50
0
0
EON
EOFF
100 200 300 400 500
RG ()
Fig. 15 - Typ. Energy Loss vs. RG
TJ = 150°C; L=2.5mH; VCE= 400V
ICE= 4.0A; VGE= 15V
6
1000
tdOFF
100 tF
tdON
10 tR
1
0 2 4 6 8 10
IC (A)
Fig. 14 - Typ. Switching Time vs. IC
TJ = 150°C; L=2.5mH; VCE= 400V
RG= 100; VGE= 15V
1000
tdOFF
100 tF
tdON
tR
10
0
100 200 300 400 500
RG ()
Fig. 16 - Typ. Switching Time vs. RG
TJ = 150°C; L=2.5mH; VCE= 400V
ICE= 4.0A; VGE= 15V
www.irf.com

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部品番号部品説明メーカ
IRGS4B60KD1PBF

Insulated Gate Bipolar Transistor

International Rectifier
International Rectifier


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